摘要:
A hermetic package for an electronic device is manufactured by providing a green glass ceramic body with a green via to produce a workpiece. The workpiece is sintered at a temperature at or above 500.degree. C., while compressing the workpiece at a pressure at or above 100 pounds per square inch, so as to obtain a hermetic package. The green via comprises a mixture of copper and a glass ceramic material with a sufficient volume of glass to produce a hermetic package, yet with sufficient copper to have a suitable electrical conductivity.The hermetic package thus produced comprises a sintered glass ceramic body having an electrically conductive sintered via which is hermetically bonded to the glass ceramic body and which comprises a mixture of an electrically conductive material and a glass ceramic material. The electrically conductive material forms at most 50 volume percent of the via.The workpiece may be sintered in a sintering fixture having a frame and a compensating insert. The compensating insert and frame bound a sintering chamber for accommodating the workpiece. By providing a frame having a thermal expansion coefficient greater than that of the workpiece, and by providing a compensating insert having a thermal expansion coefficient greater than that of the frame, a close fit can be assured between the workpiece and the sintering fixture over a large range of temperatures.
摘要:
An electrolytic print head comprises a plurality of styli (16, 18) between electrically insulative laminae (38, 42, 48, 38', 42', 48') which space the styli from planar reference electrodes (20, 22, 24). The styli and reference electrodes are fabricated of a mixture of ruthenium dioxide and corrosion resistant glass, and the insulative laminae are fabricated of corrosion resistant glass. The method of manufacture of the print head facilitates use of styli and reference electrodes requiring high temperature processing prior to deposition of metal conductor tracks for the styli and reference electrodes.
摘要:
A method for forming a pattern in a metallic and/or ceramic substrate by laminating together the substrate which is in the green stage and a composite of a photosensitive material and a backing wherein the photosensitive material has been developed into the desired pattern, and then subjecting the substrate to elevated temperatures in order to cause sintering of the substrate and removal of the photosensitive material, thereby resulting in embedding of the pattern into the sintered substrate.
摘要:
A carrier for LSI chips includes a built-in capacitor structure in the carrier. The capacitor is located beneath the chip with the plates of the capacitor parallel to the chip mounting surface or at right angles to the chip mounting surface. The capacitor is formed by assembling an array of capacitive segments together to form the first one of the plates of a capacitor with the other plate spanning a plurality of the segments of the first plate. Each of the segments of the first plate includes a set of conductive via lines which extend up to a severable link on the chip mounting surface. The severable via is cut by means of a laser beam or the like when the capacitor must be repaired by deleting a defective segment of the capacitor. Preferably, the structure includes a pair of parallel conductive charge redistribution planes above and below the capacitor plates with connections to the respective plates providing a low inductance structure achieved by providing a current distribution which results in cancellation of magnetic flux. The lower redistribution plane is preferably connected directly to the lower capacitor plate. The upper redistribution plane is preferably connected to the segments of the first capacitor plate by means of the vias which extend first to the chip mounting surface and then down to the redistribution plane which has connections to the chip mounting pads.
摘要:
A chip carrier system for supporting electronic semiconductor chips is provided with a matched coefficient of thermal expansion as well as a high value of capacitance. The carrier provides both mechanical and electrical connections to the chip. A small sized interposer for a silicon chip possesses high capacitance. An array of dot capacitors is formed between laminated layers of ceramic material. In some cases, conductive surfaces are provided on the upper and lower surfaces of a thin film of ceramic material in which dielectric bodies are interspersed in an array of openings therein. The resultant ceramic dielectric combination has a coefficient of thermal expansion which matches the coefficient of thermal expansion of the silicon chip and the substrate thereby relieving stress upon the solder ball joints between the interposer and both the chip and the substrate. This minimizes the mechanical stress upon the solder ball joints during thermal cycling of the structure. Alternatively, an array of multilayer ceramic capacitors has an array of dielectric bodies located within holes in ceramic layers between capacitor plates, or entire arrays of capacitors are formed in the space between ceramic sheets.
摘要:
An integrated circuit carrier comprising a modular substrate having an upper surface, a multitude of electrically conducting device terminals on the upper surface of the substrate, a multitude of electrically conducting engineering change pads also on the upper surface of the substrate, and an engineering change network to form a unique electrical connection between each of an arbitrary subset of the device terminals and each of an arbitrary subset of the engineering change pads. The engineering change network includes a multitude of connecting pads, and a multitude of first, second, and third conductive leads or wires, and each of the connecting pads includes first and second spaced apart sections.
摘要:
Ceramic substrates and a method for forming the ceramic substrates containing multi-level and interconnected circuit patterns of copper based conductors which are resistant to oxidation, said formation includes burn-out of binders in air. The oxidation resistant copper based conductors are composed primarily of copper and additives such as zinc, platinum and chrome.
摘要:
A high dielectric constant glass-ceramic material comprising small conducting grains based on BaTiO.sub.3 and/or SrTiO.sub.3 on the order of about 0.5-10.0 .mu.m surrounded by a thin microcrystalline insulating barrier layer at the grain boundary about 0.01-0.10 .mu.m thick wherein the conductivity of the grains is enhanced by addition of about 0.1-4.0 mol % of a dopant selected from among Group V elements, Ge and Si substantially incorporated in the bulk lattice of the grains upon Ti sites. A novel process for forming the glass-ceramic material is also disclosed.