公开(公告)号：US09328026B2

公开(公告)日：2016-05-03

申请号：US14140741

申请日：2013-12-26

申请人： Murata Manufacturing Co., Ltd.

发明人： Kenichi Okajima ,  Daiki Fukunaga ,  Takayuki Yao ,  Yasunari Nakamura ,  Akihiro Shiota

IPC分类号： C04B37/00 ,  H01G4/30 ,  H01G4/12 ,  B32B18/00

CPC分类号： C04B37/001 ,  B32B18/00 ,  C04B2237/346 ,  C04B2237/58 ,  C04B2237/704 ,  C04B2237/80 ,  H01G4/1227 ,  H01G4/1281 ,  H01G4/30 ,  Y10T29/43

摘要： A raw ceramic portion is formed on each of first and second lateral surfaces of a raw ceramic body. The raw ceramic portions contain ceramic particles and more of at least one constituent selected from Ba, Mg, Mn, and a rare-earth element between the ceramic particles than the ceramic section of the raw ceramic body in terms of total amount. The raw ceramic body is fired with the raw ceramic portions thereon. In this way, a ceramic electronic component is obtained that has a main body left after the raw ceramic body is fired with the raw ceramic portions thereon.

摘要翻译： 原料陶瓷部分形成在原料陶瓷体的第一和第二侧表面的每一个上。 原料陶瓷部分在陶瓷颗粒之外含有陶瓷颗粒和更多的选自Ba，Mg，Mn和稀土元素中的至少一种，而不是陶瓷颗粒的总量的陶瓷部分。 原料陶瓷体在其上被烧制。 以这种方式，获得陶瓷电子部件，其中在原料陶瓷体被烧制之后留下的主体在其上留下。

公开(公告)号：US08675344B2

公开(公告)日：2014-03-18

申请号：US13423588

申请日：2012-03-19

申请人： Fatih Dogan

发明人： Fatih Dogan

IPC分类号： H01G4/12 ,  C04B35/46 ,  C04B35/111 ,  C04B35/468

CPC分类号： H01G4/1209 ,  B82Y30/00 ,  C04B35/111 ,  C04B35/46 ,  C04B35/4682 ,  C04B35/486 ,  C04B35/491 ,  C04B2235/6565 ,  C04B2235/781 ,  C04B2235/782 ,  C04B2235/785 ,  C04B2235/85 ,  H01G4/1281 ,  H01G4/30

摘要： A high energy density multilayer ceramic capacitor, having at least two electrode layers and at least one substantially dense polycrystalline dielectric layer positioned therebetween. The at polycrystalline dielectric layer has an average grain size of less than about 300 nanometers, a particle size distribution of between about 150 nanometers and about 3 micrometers, and a maximum porosity of about 1 percent. The dielectric layer is selected from the group including TiO2, BaTiO3, Al2O3, ZrO2, lead zirconium titanate, and combinations thereof and has a breakdown strength of at least about 1100 kV per centimeter.

摘要翻译： 一种高能量密度多层陶瓷电容器，其具有至少两个电极层和至少一个基本上致密的多晶电介质层。 多晶电介质层的平均晶粒尺寸小于约300纳米，粒度分布在约150纳米至约3微米之间，最大孔隙率为约1％。 电介质层选自TiO 2，BaTiO 3，Al 2 O 3，ZrO 2，钛酸铅锆及其组合，并且具有至少约1100kV /厘米的击穿强度。

公开(公告)号：US20090059471A1

公开(公告)日：2009-03-05

申请号：US11909713

申请日：2006-03-17

申请人： Daisuke Fukuda ,  Kiyoshi Matsubara ,  Masahiro Nishigaki

发明人： Daisuke Fukuda ,  Kiyoshi Matsubara ,  Masahiro Nishigaki

IPC分类号： H01G4/12 ,  C04B35/64

CPC分类号： H01G4/1281 ,  C04B35/4682 ,  C04B35/62685 ,  C04B35/62805 ,  C04B35/6281 ,  C04B35/62815 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3236 ,  C04B2235/3262 ,  C04B2235/3418 ,  C04B2235/3436 ,  C04B2235/36 ,  C04B2235/5409 ,  C04B2235/5445 ,  C04B2235/6025 ,  C04B2235/652 ,  C04B2235/656 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/663 ,  C04B2235/72 ,  C04B2235/762 ,  C04B2235/765 ,  C04B2235/784 ,  C04B2235/785 ,  C04B2235/79 ,  C04B2235/80 ,  C04B2235/85 ,  H01G4/1227 ,  H01G4/30 ,  Y10T29/435

摘要： The invention provides a multilayer ceramic capacitor comprising a capacitor body composed by alternately layering dielectric layers and inner electrode layers, and each of the above mentioned dielectric layers contains a plurality of crystal particles, and grain boundary phases comprising interfacial grain boundaries and triple point grain boundaries formed among a plurality of the crystal particles adjacent to one another, and Si—Ba—O compound being formed in 5% or more of the triple point grain boundaries in the entire triple point grain boundaries per unit surface area of the dielectric layer. Accordingly, the multilayer ceramic capacitor has high relative permittivity and is high the temperature property and highly accelerated life test property.

摘要翻译： 本发明提供一种多层陶瓷电容器，其包括通过交替层叠电介质层和内部电极层而构成的电容器体，并且上述每个电介质层包含多个晶体颗粒，并且包含界面晶界和三点晶界的晶界相 形成在彼此相邻的多个晶体颗粒中，并且Si-Ba-O化合物形成在电介质层的每单位表面积的整个三重点晶界的三重点晶界的5％以上。 因此，多层陶瓷电容器具有高的相对介电常数，并且具有高的温度特性和高加速的寿命测试特性。

公开(公告)号：US20080117561A1

公开(公告)日：2008-05-22

申请号：US12024730

申请日：2008-02-01

申请人： Shinsuke TANI ,  Mitsutoshi KAWAMOTO

发明人： Shinsuke TANI ,  Mitsutoshi KAWAMOTO

IPC分类号： H01G4/06

CPC分类号： H01G4/1227 ,  B32B18/00 ,  B82Y30/00 ,  C04B35/47 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3241 ,  C04B2235/3251 ,  C04B2235/3258 ,  C04B2235/326 ,  C04B2235/3262 ,  C04B2235/3275 ,  C04B2235/3279 ,  C04B2235/3281 ,  C04B2235/3418 ,  C04B2235/36 ,  C04B2235/441 ,  C04B2235/5409 ,  C04B2235/5454 ,  C04B2235/6025 ,  C04B2235/6582 ,  C04B2235/663 ,  C04B2235/785 ,  C04B2235/786 ,  C04B2235/79 ,  C04B2235/85 ,  H01C7/115 ,  H01C7/18 ,  H01G4/1281 ,  H01G4/30 ,  Y10T29/435

摘要： A monolithic semiconductor ceramic capacitor includes semiconductor ceramic layers made of a semiconductor ceramic having a Sr site and a Ti site. The semiconductor ceramic satisfies the inequality 1.000

摘要翻译： 单片半导体陶瓷电容器包括由具有Sr部位和Ti部位的半导体陶瓷制成的半导体陶瓷层。 半导体陶瓷满足不等式1.000

公开(公告)号：US5097391A

公开(公告)日：1992-03-17

申请号：US599414

申请日：1990-10-18

申请人： Takeshi Nomura ,  Masaaki Ikeda ,  Shigekazu Sumita ,  Yukie Nakano ,  Kousuke Nishiyama ,  Michio Abe

发明人： Takeshi Nomura ,  Masaaki Ikeda ,  Shigekazu Sumita ,  Yukie Nakano ,  Kousuke Nishiyama ,  Michio Abe

IPC分类号： H01G4/12 ,  H01G4/30

CPC分类号： H01G4/30 ,  H01G4/1281 ,  Y10T29/435

摘要： In a ceramic multilayer chip capacitor comprising alternately stacked internal electrodes of Ni or Ni alloy and dielectric layers, an oxide layer having a different composition from the dielectric layer is formed on the periphery of each internal electrode. The dielectric layer consists essentially of grains and a grain boundary phase, the percent area of the grain boundary phase being up to 2% of the area of a cross section of the dielectric layer. The capacitor is prepared by alternately stacking Ni or Ni alloy and a dielectric material in layer form, firing and then heat treating the stack under predetermined oxygen partial pressures. The dielectric material is a barium titanate base oxide material. The capacitor has a long effective life.

公开(公告)号：US4889837A

公开(公告)日：1989-12-26

申请号：US088071

申请日：1987-08-21

申请人： Shuichi Ono ,  Shuichi Itagaki ,  Masahiro Yahagi

发明人： Shuichi Ono ,  Shuichi Itagaki ,  Masahiro Yahagi

IPC分类号： C04B35/47 ,  H01G4/12

CPC分类号： H01G4/1281 ,  C04B35/47

摘要： A semiconductive ceramic composition for a boundary insulation type semiconductive ceramic capacitor capable of causing the capacitor to exhibit increased dielectric constant, satisfactory frequency and temperature characteristics, and decreased dielectric loss. The composition includes a SrTiO.sub.3 base component and a minor component consisting of CaTiO.sub.3, Y.sub.2 O.sub.3 and Nb.sub.2 O.sub.5. The composition may further contain MnO and SiO.sub.2, which contribute to an increase in insulation resistance of the capacitor and enlargement of an appropriate range of a (SrO+CaO)/TiO.sub.2, respectively. Also, a composition includes a SrTiO.sub.3 base component and a minor component consisting of CaTiO.sub.3, BaTiO.sub.3, Y.sub.2 O.sub.3 and Nb.sub.2 O.sub.5.

摘要翻译： 一种用于边界绝缘型半导体陶瓷电容器的半导体陶瓷组合物，其能够使电容器具有增加的介电常数，令人满意的频率和温度特性以及降低的介电损耗。 该组成包括SrTiO 3基础组分和由CaTiO 3，Y 2 O 3和Nb 2 O 5组成的次要组分。 该组合物可以进一步含有MnO和SiO 2，其有助于电容器的绝缘电阻的增加和分别适当范围的（SrO + CaO）/ TiO 2的扩大。 此外，组合物包括SrTiO 3基础组分和由CaTiO 3，BaTiO 3，Y 2 O 3和Nb 2 O 5组成的次要组分。

公开(公告)号：US4870539A

公开(公告)日：1989-09-26

申请号：US297907

申请日：1989-01-17

申请人： Dudley A. Chance ,  Yung-Haw Hu

发明人： Dudley A. Chance ,  Yung-Haw Hu

IPC分类号： C03C10/02 ,  C04B35/468 ,  C04B35/47 ,  H01G4/12

CPC分类号： C04B35/47 ,  C04B35/4682 ,  H01G4/1281 ,  H01G4/129 ,  Y10T29/435

摘要： A high dielectric constant glass-ceramic material comprising small conducting grains based on BaTiO.sub.3 and/or SrTiO.sub.3 on the order of about 0.5-10.0 .mu.m surrounded by a thin microcrystalline insulating barrier layer at the grain boundary about 0.01-0.10 .mu.m thick wherein the conductivity of the grains is enhanced by addition of about 0.1-4.0 mol % of a dopant selected from among Group V elements, Ge and Si substantially incorporated in the bulk lattice of the grains upon Ti sites. A novel process for forming the glass-ceramic material is also disclosed.

公开(公告)号：US4405475A

公开(公告)日：1983-09-20

申请号：US443776

申请日：1982-11-22

申请人： Kiyoshi Murase ,  Nobutatsu Yamaoka ,  Masayuki Fujimoto

发明人： Kiyoshi Murase ,  Nobutatsu Yamaoka ,  Masayuki Fujimoto

IPC分类号： C04B35/46 ,  C04B35/47 ,  H01B3/12 ,  H01G4/12

CPC分类号： H01G4/1281 ,  C04B35/47

摘要： A dielectric ceramic material composed of primary and secondary ingredients forming in combination a polycrystalline ceramic proper, and of insulating substances diffused throughout the intergranular boundaries of the ceramic proper for an increase in apparent relative dielectric constant. The primary ingredients comprise, in relative proportions, 91.18-99.82 wt. % SrTiO.sub.3, 0.13-5.32 wt. % Nb.sub.2 O.sub.5, and 0.05-3.50 wt. % ZnO. The secondary ingredients comprise 0.02-0.10 wt. part SiO.sub.2 and 0.01-0.03 wt. part Al.sub.2 O.sub.3 with respect to 100 wt. parts of the primary ingredients, with the weight ratio of SiO.sub.2 to Al.sub.2 O.sub.3 being from 1.5 to 5.0. The insulating substances comprise 0.03-2.90 wt. % PbO, 0.11-4.28 wt. % Bi.sub.2 O.sub.3, and 0.001-0.18 wt. % B.sub.2 O.sub.3 with respect to the total weight of the primary and the secondary ingredients. In the fabrication of bodies of the ceramic the mixture of the insulating substances is coated or otherwise layered on polycrystalline ceramic bodies prepared from the primary and secondary ingredients. The coated ceramic bodies are then heated to cause diffusion of the insulating substances throughout their intergranular boundaries.

摘要翻译： 由主要和次要成分组成的介电陶瓷材料，其组合形成多晶陶瓷本身，并且绝缘物质在陶瓷本身的整个晶界处扩散，以增加表观相对介电常数。 主要成分以相对比例包括91.18-99.82wt。 ％SrTiO 3，0.13-5.32wt。 ％Nb2O5和0.05-3.50wt。 ％ZnO。 次要成分包含0.02-0.10wt。 部分SiO2和0.01-0.03wt。 部分Al2O3相对于100wt。 主要成分的一部分，SiO 2与Al 2 O 3的重量比为1.5-5.0。 绝缘物质包含0.03-2.90重量％ ％PbO，0.11-4.28wt。 ％Bi 2 O 3和0.001-0.18wt。 ％B2O3相对于初级和次级成分的总重量。 在陶瓷体的制造中，绝缘物质的混合物被涂覆或以其它方式分层在由初级和次级成分制备的多晶陶瓷体上。 然后将涂覆的陶瓷体加热，使绝缘物质扩散到其晶间界面。

公开(公告)号：US4367265A

公开(公告)日：1983-01-04

申请号：US251593

申请日：1981-04-06

申请人： Chyang J. Yu ,  Hem P. Takiar

发明人： Chyang J. Yu ,  Hem P. Takiar

IPC分类号： C04B35/468 ,  C04B35/47 ,  H01G4/12 ,  B32B9/04 ,  C04B35/00

CPC分类号： C04B35/4682 ,  C04B35/47 ,  H01G4/1281

摘要： An intergranular insulation type semiconductive ceramic having a high effective dielectric constant includes an electrically insulating dielectric layer situated in the grain boundaries of an alkaline-earth metal titanate, zirconate, or combination thereof. The alkaline-earth metals are barium, strontium, and calcium. The dielectric layer is made of a mixture of bismuth oxide (Bi.sub.2 O.sub.3) and one or more metal oxides from nickel oxide (NiO), alumina (Al.sub.2 O.sub.3), and cuprous oxide (Cu.sub.2 O).

摘要翻译： 具有高有效介电常数的晶间绝缘型半导体陶瓷包括位于碱土金属钛酸盐，锆酸盐或其组合的晶界中的电绝缘介电层。 碱土金属是钡，锶和钙。 电介质层由氧化铋（Bi 2 O 3）和一种或多种来自氧化镍（NiO），氧化铝（Al 2 O 3）和氧化亚铜（Cu 2 O）的金属氧化物的混合物制成。

公开(公告)号：US4337162A

公开(公告)日：1982-06-29

申请号：US151680

申请日：1980-05-20

申请人： David A. Payne ,  Sang M. Park ,  Otto C. Jahnke

发明人： David A. Payne ,  Sang M. Park ,  Otto C. Jahnke

IPC分类号： C04B35/465 ,  C04B35/468 ,  H01B3/12 ,  H01G4/12 ,  C04B35/46 ,  C04B35/64

CPC分类号： C04B35/4684 ,  C04B35/465 ,  C04B35/4682 ,  H01B3/12 ,  H01G4/1281

摘要： An improved polycrystalline semiconducting ceramic composition comprises an alkaline earth metal titanate doped with a hexavalent metal oxide such as (MO.sub.3)(Bi.sub.2 O.sub.3).sub.x where M is tungsten or molybdenum, and x ranges from 0 to 7, which is liquid phase sintered with lead germanate to produce internal insulating boundaries. The composition is fine grained and provides thin-layer, multi-layer capacitors that exhibit high dielectric constant values, low dissipation factors, and low temperature and voltage coefficients of capacitance.

摘要翻译： 改进的多晶半导体陶瓷组合物包含掺杂有六价金属氧化物的碱土金属钛酸盐，例如（MO 3）（Bi 2 O 3）x，其中M是钨或钼，x为0至7，其为与锗酸铅 以产生内部绝缘边界。 该组合物是细粒度的，并且提供表现出高介电常数值，低耗散因数以及电容的低温和电压系数的薄层多层电容器。