公开(公告)号：US09006654B2

公开(公告)日：2015-04-14

申请号：US14447589

申请日：2014-07-30

Applicant: Hitachi High-Technologies Corporation

Inventor： Soichiro Matsunaga ,  Souichi Katagiri ,  Hajime Kawano

IPC: H01J37/26 ,  H01J37/28 ,  H01J37/304 ,  H01J37/09 ,  H01J37/147

CPC classification number: H01J37/28 ,  H01J37/06 ,  H01J37/09 ,  H01J37/147 ,  H01J37/3045 ,  H01J2237/0455 ,  H01J2237/06316 ,  H01J2237/065 ,  H01J2237/1501 ,  H01J2237/24465 ,  H01J2237/24535 ,  H01J2237/24542

Abstract: An embodiment is to provide a technique that continuously applies a certain amount of an electron beam to a sample by selecting a beam applied to the sample from an electron beam emitted from an electron source in a scanning electron microscope. A charged particle apparatus is configured, including: a mechanism that detects the distribution of electric current strength with respect to the emitting direction of an electron beam emitted from an electron source; a functionality that predicts a fluctuation of an electric current applied to a sample by predicting the distribution of the electric current based on the detected result; a functionality that determines a position at which a beam applied to the sample is acquired based on the predicted result; and a mechanism that controls a position at which a probe beam is acquired based on the determined result.

Abstract translation: 一个实施例是提供一种技术，其通过从扫描电子显微镜中从电子源发射的电子束中选择施加到样品的光束，将一定量的电子束连续地施加到样品。 一种带电粒子装置，包括：检测相对于从电子源发射的电子束的发射方向的电流强度分布的机构; 通过基于检测结果预测电流分布来预测施加到样本的电流的波动的功能; 基于预测结果确定施加到样本的光束的位置的功能; 以及基于所确定的结果来控制获取探测光束的位置的机构。

公开(公告)号：US08698108B1

公开(公告)日：2014-04-15

申请号：US13790791

申请日：2013-03-08

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Joseph P. Dzengeleski ,  Eric Hermanson ,  Robert J. Mitchell ,  Tyler Rockwell ,  James W. Wilkinson ,  James Paul Buonodono ,  Frank Sinclair

IPC: H01J37/09 ,  H01J37/317 ,  H01L21/265

CPC classification number: H01J37/3171 ,  H01J37/244 ,  H01J2237/24405 ,  H01J2237/24535

Abstract: A system of measuring ion beam current in a process chamber using conductive liners is disclosed. A conductive liner is used to shield the walls of the process chamber. An ion measuring device, such as an ammeter, is used to measure the current created by the ions that impact the conductive liner. In some embodiments, a mechanism to contain secondary electrons generated in the process chamber is employed. Additionally, the ions that impact the scan system or workpiece may also be measured, thereby allowing the current of the entire ion beam to be measured.

Abstract translation: 公开了一种使用导电衬套测量处理室中的离子束电流的系统。 导电衬套用于屏蔽处理室的壁。 使用诸如电流表的离子测量装置来测量由撞击导电衬垫的离子产生的电流。 在一些实施例中，采用在处理室中产生的含有二次电子的机制。 此外，还可以测量冲击扫描系统或工件的离子，从而允许测量整个离子束的电流。

公开(公告)号：US08575579B2

公开(公告)日：2013-11-05

申请号：US13429559

申请日：2012-03-26

Applicant: Vadim Moskvin ,  Chee Wai Cheng

Inventor： Vadim Moskvin ,  Chee Wai Cheng

IPC: A61N5/00 ,  A61N5/10 ,  H01J37/09

CPC classification number: A61N5/1045 ,  A61N5/1071 ,  A61N2005/1087 ,  A61N2005/1094

Abstract: A proton beam collimator comprising (a) titanium or (b) stainless steel containing no tungsten or (c) containing no tungsten or brass. The collimator comprises a multi-leaf collimator (MLC). The apparatus further comprises an integrated circuit (IC) mounted adjacent the collimator, the IC subject to exposure to atomic particles, illustratively, neutrons.

Abstract translation: 包括（a）钛或（b）不含钨的不锈钢或不含钨或黄铜的（c））的质子束准直仪。 准直器包括多叶准直器（MLC）。 该装置还包括邻近准直器安装的集成电路（IC），IC暴露于原子粒子，例如中子。

公开(公告)号：US07525104B2

公开(公告)日：2009-04-28

申请号：US11596707

申请日：2005-02-04

Applicant: Hisashi Harada

Inventor： Hisashi Harada

IPC: G21K5/04 ,  G21K1/04 ,  H01J37/09 ,  A61N5/00

CPC classification number: A61N5/10 ,  A61N5/1043 ,  A61N2005/1087 ,  A61N2005/1096 ,  G21K5/04

Abstract: In a particle beam irradiation method and a particle beam irradiation apparatus in which depth direction irradiation field spread and lateral direction irradiation field spread are performed, an irradiation dose in each of irradiation layers of an irradiation target is made substantially constant, and control is simplified.The depth direction irradiation field spread is made the active irradiation field spread in which plural irradiation layers having different ranges in an irradiation direction of the particle beam are superimposed, the lateral direction irradiation field spread is made the active irradiation field spread in which irradiation spots of the particle beam are superimposed in the lateral direction, and a bolus having a shape along a deepest part of the irradiation target in the depth direction is disposed to cross the particle beam.

Abstract translation: 在进行深度方向照射场扩散和横向照射场扩散的粒子束照射方法和粒子束照射装置中，使照射对象的各照射层的照射剂量基本上恒定，简化了控制。 使深度方向照射场扩展成为主动照射场扩展，其中在粒子束的照射方向上具有不同范围的多个照射层叠加，横向照射场扩展成为主动照射场扩展，其中照射点 粒子束在横向上叠加，并且沿着深度方向沿着照射靶的最深部分具有形状的弹丸设置成与粒子束交叉。

公开(公告)号：US20080157007A1

公开(公告)日：2008-07-03

申请号：US11646155

申请日：2006-12-27

Applicant: Peter Nunan ,  Gregory Redinbo ,  Julian Blake ,  Paul S. Buccos

Inventor： Peter Nunan ,  Gregory Redinbo ,  Julian Blake ,  Paul S. Buccos

IPC: H01J37/09

CPC classification number: H01L21/67213 ,  C23C14/48 ,  C23C14/564 ,  H01L21/67017

Abstract: A particle isolation system includes a semiconductor process chamber; at least one member within the semiconductor process chamber wherein the member has at least a first position and a second position; and at least one isolation compartment having a plurality of walls, the isolation compartment defined by the plurality of walls, at least one of the plurality of walls of the isolation compartment defining at least one opening wherein the member in the first position permits particles to enter the isolation compartment from the semiconductor process chamber through the opening, and wherein the member in the second position substantially encloses the isolation compartment thereby substantially retaining the particles in the isolation compartment and substantially limiting movement of the particles between the semiconductor process chamber and the isolation compartment through the opening. An ion implant system is also provided.

Abstract translation: 粒子隔离系统包括半导体处理室; 所述半导体处理室内的至少一个构件，其中所述构件具有至少第一位置和第二位置; 以及至少一个具有多个壁的隔离室，隔离室由多个壁限定，隔离隔室的多个壁中的至少一个限定了至少一个开口，其中第一位置的构件允许颗粒进入 所述隔离室通过所述开口与所述半导体处理室隔离，并且其中所述第二位置中的所述构件基本上包围所述隔离隔室，从而将所述颗粒基本上保持在所述隔离室中，并且基本上限制所述颗粒在所述半导体处理室和所述隔离室之间的运动 通过开放。 还提供离子注入系统。

公开(公告)号：US20050178982A1

公开(公告)日：2005-08-18

申请号：US11058695

申请日：2005-02-15

Applicant: Alexander Henstra ,  Jaroslav Chmelik

Inventor： Alexander Henstra ,  Jaroslav Chmelik

IPC: G21K1/00 ,  G21K1/02 ,  H01J37/05 ,  H01J37/09 ,  H01J37/153 ,  H01J37/26 ,  H01J3/26

CPC classification number: H01J37/05 ,  H01J37/09 ,  H01J37/153 ,  H01J37/26

Abstract: The invention describes a particle source in which energy selection occurs. The energy selection occurs by sending a beam of electrically charged particles 13 eccentrically through a lens 6. As a result of this, energy dispersion will occur in an image 15 formed by the lens 6. By projecting this image 15 onto a diaphragm 7, it is possible to only allow particles in a limited portion of the energy spectrum to pass. Consequently, the passed beam 16 will have a reduced energy spread. By adding a deflection unit 10, this particle beam 16 can be deflected toward the optical axis 2. One can also elect to deflect a beam 12 going through the middle of the lens 6—and having, for example, greater current—toward the optical axis.

Abstract translation: 本发明描述了发生能量选择的粒子源。 通过透镜6偏心地发送带电粒子13的光束来进行能量选择。其结果是，由透镜6形成的图像15中会发生能量分散。通过将该图像15投影到膜片7上， 可能只允许能谱范围的有限部分的粒子通过。 因此，通过的光束16将具有减小的能量扩展。 通过添加偏转单元10，该粒子束16可以朝向光轴2偏转。还可以选择使穿过透镜6的中部的光束12偏转并具有例如更大的电流朝向光学 轴。

公开(公告)号：US06930316B2

公开(公告)日：2005-08-16

申请号：US10011869

申请日：2001-12-03

Applicant: Tsutomu Nishihashi ,  Junki Fujiyama ,  Yuzo Sakurada

Inventor： Tsutomu Nishihashi ,  Junki Fujiyama ,  Yuzo Sakurada

IPC: C23C14/48 ,  G01Q60/00 ,  H01J37/04 ,  H01J37/09 ,  H01J37/317 ,  H01L21/265 ,  H01J37/08 ,  G21G5/00

CPC classification number: H01J37/3171 ,  H01J2237/31711

Abstract: In an ion implantation system including (a) an ion source (b) a mass analyzing portion, (c) an ion acceleration portion, (d) an ion beam focusing/deflecting portion, and (e) an end station chamber for implanting ions onto a semiconductor substrate. The ion source consists of plural ion sources being connected to the same mass analyzing portion in which any one of the plural ion sources is selected. Mass-separated ions from the ion source are led to the acceleration portion, and a stencil mask is arranged approximately to the semiconductor substrate in the end station chamber.

Abstract translation: 在离子注入系统中，包括（a）离子源（b）质量分析部分，（c）离子加速部分，（d）离子束聚焦/偏转部分，和（e）用于注入离子 到半导体衬底上。 离子源由多个离子源组成，其中多个离子源连接到选择多个离子源中的任何一个的同一质量分析部分。 来自离子源的质量分离的离子被引导到加速部分，并且模板掩模大致布置在终端站室中的半导体衬底上。

公开(公告)号：US06903337B2

公开(公告)日：2005-06-07

申请号：US10185729

申请日：2002-07-01

Applicant: Oliver Kienzle ,  Dirk Stenkamp ,  Michael Steigerwald ,  Rainer Knippelmeyer ,  Max Haider ,  Heiko Müller ,  Stephan Uhlemann

Inventor： Oliver Kienzle ,  Dirk Stenkamp ,  Michael Steigerwald ,  Rainer Knippelmeyer ,  Max Haider ,  Heiko Müller ,  Stephan Uhlemann

IPC: G03F7/20 ,  H01J31/00 ,  H01J37/09 ,  H01J37/12 ,  H01J37/147 ,  H01J37/244 ,  H01J37/28 ,  H01J37/285

CPC classification number: H01J37/28 ,  H01J2237/082 ,  H01J2237/2446

Abstract: An examining system for imaging an object positionable in an object plane, includes an illumination device for supplying energy to a delimited field of the object such that charged particles emerge from locations of the field, the field being displaceable in the plane of the object, a first deflector for providing a variable deflection field for guiding charged particles emerging from locations of a selectable region of the object through a fixed, predetermined beam cross-section, and a position-sensitive detector disposed in the beam path such that the charged particles, after having passed through the first deflector, impinge on the position-sensitive detector, wherein particles emerging from different locations of the region are imaged on different locations of the position-sensitive detector which are allocated to the locations of emergence.

Abstract translation: 一种用于对物体平面中定位的物体进行成像的检查系统，包括用于向物体的界定场提供能量的照明装置，使得带电粒子从场的位置出现，该场可在物体的平面中移动， 第一偏转器，用于提供可变偏转场，用于引导通过固定的预定光束横截面从物体的可选择区域的位置出射的带电粒子，以及设置在光束路径中的位置敏感检测器，使得带电粒子在 已经穿过第一偏转器，撞击位置敏感检测器，其中从该区域的不同位置出现的颗粒被成像在位置敏感检测器的分配到出现位置的不同位置上。

公开(公告)号：US20050072941A1

公开(公告)日：2005-04-07

申请号：US10958141

申请日：2004-10-05

Applicant: Sayaka Tanimoto ,  Yasunari Sohda ,  Yoshinori Nakayama ,  Osamu Kamimura ,  Haruo Yoda ,  Masaki Hosoda

Inventor： Sayaka Tanimoto ,  Yasunari Sohda ,  Yoshinori Nakayama ,  Osamu Kamimura ,  Haruo Yoda ,  Masaki Hosoda

IPC: G21K5/04 ,  G03F7/20 ,  H01J37/04 ,  H01J37/09 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027 ,  H01J37/302

CPC classification number: H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/04 ,  H01J37/317

Abstract: Disclosed is equipment for charged-particle beam lithography capable of executing exposure even when an electron beam with a bad property is produced due to a failure in some multibeam forming element, without replacing the failing multibeam forming element and without reducing the exposure accuracy. The equipment includes means for forming a plurality of charged-particle beams arranged at predetermined intervals; a plurality of blankers which act on the plurality of charged-particle beams individually; a common blanker which acts on all of the plurality of charged-particle beams; and a blanking restriction for causing those charged-particle beams which are given predetermined deflection by the plurality of blankers to reach onto a sample, with a signal applied to the common blanker, and blocking those charged-particle beams which are not given the predetermined deflection by the plurality of blankers to the sample. The equipment blocks beams with bad properties to the sample and executes exposure using only those beams which have bad properties.

Abstract translation: 本发明公开了即使由于某些多波束形成元件的故障而产生具有不良特性的电子束也能够进行曝光的带电粒子束光刻设备，而不更换故障多波束形成元件而不降低曝光精度。 该设备包括用于形成以预定间隔布置的多个带电粒子束的装置; 分别作用在多个带电粒子束上的多个阻挡器; 作用于所有多个带电粒子束的常见消隐器; 以及消隐限制，用于使得由多个消隐器给予预定偏转的那些带电粒子束到达样本，信号施加到公共消隐器，并且阻挡未被给予预定偏转的那些带电粒子束 通过多个消隐器到样品。 设备阻挡样品性能不良的光束，并仅使用具有不良特性的光束执行曝光。

公开(公告)号：US06870310B2

公开(公告)日：2005-03-22

申请号：US10618008

申请日：2003-07-14

Applicant: Masahiko Okunuki ,  Hiroya Ohta ,  Norio Saito ,  Masaki Takakuwa ,  Sayaka Tanimoto ,  Takeshi Haraguchi

Inventor： Masahiko Okunuki ,  Hiroya Ohta ,  Norio Saito ,  Masaki Takakuwa ,  Sayaka Tanimoto ,  Takeshi Haraguchi

IPC: G03F7/20 ,  H01J1/46 ,  H01J3/02 ,  H01J29/46 ,  H01J37/06 ,  H01J37/07 ,  H01J37/09 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027

CPC classification number: H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  H01J3/027 ,  H01J3/029 ,  H01J37/07 ,  H01J37/09

Abstract: This invention provides a multielectron gun which generates a plurality of electron beams having uniform characteristics. A multielectron gun (2) is formed of a plurality of electron guns (2a-2c). The electron gun (2a) has, in addition to an electron source (21a), Wehnelt electrode (22a), and anode electrode (23), a shield electrode (24) between the Wehnelt electrode (22a) and anode electrode (23). The shield electrode reduces field interference among the electron guns.

Abstract translation: 本发明提供一种多电子枪，其产生具有均匀特性的多个电子束。 多电子枪（2）由多个电子枪（2a-2c）形成。 电子枪（2a）除了电子源（21a），Wehnelt电极（22a）和阳极电极（23）之外还具有在Wehnelt电极（22a）和阳极电极（23）之间的屏蔽电极（24） 。 屏蔽电极减少电子枪之间的场干扰。