Unilateral thermal buckle-beam actuator
    161.
    发明申请
    Unilateral thermal buckle-beam actuator 有权
    单向热扣式光束执行器

    公开(公告)号:US20030121260A1

    公开(公告)日:2003-07-03

    申请号:US10036810

    申请日:2001-12-31

    Abstract: A unilateral in-plane thermal buckle-beam microelectrical mechanical actuator is formed on a planar substrate of semiconductor material, for example. The actuator includes first and second anchors secured to the substrate and a floating shuttle positioned movable parallel to the substrate. Symmetric first and second sets of elongated thermal half-beams are secured between the floating shuttle and the respective first and second anchors. The first and second anchors and the first and second sets of thermal half-beams are positioned along one side of the floating shuttle. The half-beams are formed of semiconductor material, such as polysilicon. A current source directs electrical current through the thermal half beams via the anchors to impart thermal expansion of the thermal half-beams and hence linear motion of the floating center beam generally parallel to the substrate. A floating cold beam connected between the shuttle and the substrate constrains and amplifies the motion of the shuttle in a predefined direction.

    Abstract translation: 例如,在半导体材料的平面基板上形成单边平面内的热扣梁微电机械致动器。 致动器包括固定到基板上的第一和第二锚定件以及平行于基板移动的浮动梭。 对称的第一和第二组细长的热半束固定在浮动梭和相应的第一和第二锚固件之间。 第一和第二锚定装置以及第一和第二组热半束装置沿浮动梭的一侧定位。 半波束由诸如多晶硅的半导体材料形成。 电流源通过锚定器引导电流通过热半束,以赋予热半光束的热膨胀,并因此使浮动中心光束与基底平行的线性运动。 连接在梭子和基底之间的浮动冷束限制并放大梭子在预定方向上的运动。

    Thermal isolation using vertical structures
    163.
    发明申请
    Thermal isolation using vertical structures 有权
    使用垂直结构进行热隔离

    公开(公告)号:US20020086540A1

    公开(公告)日:2002-07-04

    申请号:US09682894

    申请日:2001-10-30

    Inventor: Kyle Lebouitz

    Abstract: This invention relates to the construction of microfabricated devices and, in particular, to types of microfabricated devices requiring thermal isolation from the substrates upon which they are built. This invention discloses vertical thermal isolators and methods of fabricating the vertical thermal isolators. Vertical thermal isolators offer an advantage over thermal isolators of the prior art, which were substantially horizontal in nature, in that less wafer real estate is required for the use of the vertical thermal isolators, thereby allowing a greater density per unit area of the microfabricated devices.

    Abstract translation: 本发明涉及微制造装置的构造,特别涉及需要从其构建基板的热隔离的微加工装置的类型。 本发明公开了垂直热隔离器和垂直隔热器的制造方法。 垂直隔热器具有优于现有技术的隔热装置的优点,其本质上基本上是水平的,因为使用垂直热隔离器需要更少的晶片实际尺寸,从而允许每单位面积的微加工装置的密度更大 。

    Array of thin film actuated mirrors and method for the manufacture
thereof
    164.
    发明授权
    Array of thin film actuated mirrors and method for the manufacture thereof 失效
    薄膜致动反射镜阵列及其制造方法

    公开(公告)号:US5606452A

    公开(公告)日:1997-02-25

    申请号:US548034

    申请日:1995-10-25

    Applicant: Yong-Ki Min

    Inventor: Yong-Ki Min

    Abstract: An array of M.times.N thin film actuated mirrors includes an active matrix having a substrate with an array of M.times.N connecting terminals and an array of M.times.N transistors, and an array of M.times.N actuating structures, wherein each of the actuating structures being a bimorph structure, includes a second thin film electrode, a lower electrodisplacive member, an intermediate thin film electrode, an upper electrodisplacive member and a first thin film electrode. Furthermore, there is disclosed a method for the manufacture thereof, the method comprising the steps of: providing an active matrix; forming a thin film sacrificial layer on top of the active matrix; removing selectively the thin film sacrificial layer; forming a second thin film electrode layer thereon; removing selectively the second thin film electrode layer; depositing a lower electrodisplacive layer; forming an intermediate electrode layer; depositing an upper electrodisplacive layer; forming a first thin film electrode layer, thereby forming a multiple layered structure; patterning the multiple layered structure into an array of M.times.N semifinished actuating structures; and removing the thin film sacrificial layer.

    Abstract translation: MxN薄膜致动反射镜阵列包括具有MxN连接端子阵列和MxN晶体管阵列的衬底以及MxN致动结构阵列的有源矩阵,其中每个致动结构是双压电晶片结构,包括一个 第二薄膜电极,下电致位移元件,中间薄膜电极,上部电致位移元件和第一薄膜电极。 此外,公开了一种制造方法,该方法包括以下步骤:提供有源矩阵; 在有源矩阵的顶部形成薄膜牺牲层; 选择性地去除薄膜牺牲层; 在其上形成第二薄膜电极层; 选择性地去除第二薄膜电极层; 沉积较低的电致位移层; 形成中间电极层; 沉积上部电致位移层; 形成第一薄膜电极层,从而形成多层结构; 将多层结构图案化成MxN半成品致动结构的阵列; 并去除薄膜牺牲层。

    Droplet jetting device
    167.
    发明授权

    公开(公告)号:US11938726B2

    公开(公告)日:2024-03-26

    申请号:US17481100

    申请日:2021-09-21

    CPC classification number: B41J2/04581 B41J2/04578 B81B3/0086 B81B2201/032

    Abstract: A droplet jetting device comprising a membrane layer defining a pressure chamber that is in fluid communication with a nozzle, the membrane layer carrying, on a membrane that covers the pressure chamber, an actuator for generating pressure waves in a liquid in the pressure chamber, the device further comprising a distribution layer bonded to the membrane layer on the side of the membrane and defining a supply line for supplying the liquid to the pressure chamber, the supply line being connected to the pressure chamber via a restrictor passage extending through the distribution layer in the thickness direction of that layer, and via a window formed in the membrane, characterized in that the restrictor passage has a uniform cross-section, and the membrane window is delimited by a contour that is inwardly offset from the contour of the restrictor passage on the entire periphery of the restrictor passage.

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