公开(公告)号：US20040007678A1

公开(公告)日：2004-01-15

申请号：US10192344

申请日：2002-07-10

Applicant: Axcelis Technologies, Inc.

Inventor： Joseph Ferrara

IPC: H01J037/317

CPC classification number: H01L21/68764 ,  H01J37/3171 ,  H01J2237/20207 ,  H01J2237/20235

Abstract: An ion beam implanter includes an ion beam source for generating an ion beam moving along a beam line and a vacuum or implantation chamber wherein a workpiece is positioned to intersect the ion beam for ion implantation of a surface of the workpiece by the ion beam. The ion beam implanter further includes a workpiece support structure coupled to the implantation chamber and supporting the workpiece. The workpiece support structure includes a rotation member rotatably affixed to the implantation chamber. Rotation of the rotation member with respect to the implantation chamber changes an implantation angle of the workpiece with respect to the portion of the ion beam beam line within the implantation chamber. The workpiece support structure further includes a translation member movably coupled to the rotation member and supporting the workpiece for linear movement along a path of travel. The translation member moves along a direction of movement such that a distance that the ion beam moves through the implantation chamber remains constant during movement of the workpiece along its path of travel.

Abstract translation: 离子束注入机包括用于产生沿着束线移动的离子束的离子束源和真空或注入室，其中工件被定位成与离子束相交，用于通过离子束离子注入工件的表面。 离子束注入机还包括耦合到注入室并支撑工件的工件支撑结构。 工件支撑结构包括可旋转地固定到植入室的旋转构件。 旋转构件相对于注入室的旋转改变了工件相对于植入室内的离子束束线的部分的注入角度。 工件支撑结构还包括平移构件，其可移动地联接到旋转构件并且支撑工件以沿着行进路径线性移动。 平移构件沿着移动方向移动，使得离子束移动通过植入室的距离在工件沿其行进路径移动期间保持恒定。

公开(公告)号：US20020069828A1

公开(公告)日：2002-06-13

申请号：US09732064

申请日：2000-12-07

Applicant: Axcelis Technologies, Inc.

Inventor： Joel Penelon ,  Ivan Berry

IPC: C23C016/00

CPC classification number: C23C16/517 ,  C23C16/453 ,  H05H1/46 ,  H05H1/48 ,  H05H2001/4607

Abstract: A method and apparatus for generating a plasma in a gas using a thermal source and a heat source in a common reaction zone. A process gas is flowed to a reaction zone and heated with a thermal energy source. Within the same reaction zone, a current is passed in the gas to generate a plasma within the gas. The plasma is directed to a substrate for treatment. The substrate may be a silicon wafer as part of an etching, ashing, wafer cleaning, and chemical vapor deposition.

Abstract translation: 一种用于在公共反应区中使用热源和热源在气体中产生等离子体的方法和装置。 将工艺气体流入反应区并用热能源加热。 在相同的反应区内，在气体中通入电流，以在气体内产生等离子体。 将等离子体导向基底进行治疗。 衬底可以是作为蚀刻，灰化，晶片清洁和化学气相沉积的一部分的硅晶片。

公开(公告)号：US20250157821A1

公开(公告)日：2025-05-15

申请号：US18948701

申请日：2024-11-15

Applicant: Axcelis Technologies, Inc.

Inventor： Sean Jones ,  Atul Gupta

IPC: H01L21/265 ,  H01J37/304 ,  H01J37/317 ,  H01L21/302 ,  H01L21/687

Abstract: A method for controlling workpiece deformation presents a first side of a first workpiece having an initial planarity to a first ion beam. The first ion beam deforms the first workpiece to define a first deformation of the first workpiece. A second side of the first workpiece is presented to a second ion beam to define a second deformation of the first workpiece that generally counteracts the first deformation of the first workpiece to define a final planarity of the first workpiece. The first workpiece can be a donor workpiece that is annealed after being presented to the second ion beam to define a split layer on one or more of the first and second sides of the donor workpiece. A receiver workpiece is bonded to the donor workpiece and is split from the donor workpiece to define an engineered substrate.

公开(公告)号：US20250116512A1

公开(公告)日：2025-04-10

申请号：US18892499

申请日：2024-09-22

Applicant: Axcelis Technologies, Inc.

Inventor： Phillip Geissbühler ,  FHM Faridur Rahman ,  Neil Bassom

IPC: G01B11/30

Abstract: A light source directs an incident beam at a surface of the workpiece on a stage at an oblique angle. A detector images a diffraction pattern of the incident beam reflected off the workpiece. At least one of a twist angle and a tilt angle of the workpiece on the stage is determined based on the diffraction pattern. The workpiece may be a semiconductor wafer and the stage may be, for example, part of an ion implanter.

公开(公告)号：US20250104965A1

公开(公告)日：2025-03-27

申请号：US18474402

申请日：2023-09-26

Applicant: Axcelis Technologies, Inc.

Inventor： Wilhelm Platow ,  Shu Satoh ,  Neil Bassom

IPC: H01J37/317 ,  C23C14/48 ,  H01J37/147

Abstract: A high-energy ion implantation system has an ion source and mass analyzer to form and analyze an ion beam along a beam path. A first RF LINAC accelerates the ion beam to a first accelerator exit, and a second RF LINAC accelerates the ion beam to a second accelerator exit along the beam path. A first magnet between the first and second RF LINACs alters the beam path along a first plane. A third RF LINAC accelerates the ion beam, and a second magnet between the second and third RF LINACs alters the beam path along a second plane. A beam shaping apparatus defines a shape of the ion beam, and a third magnet between the third RF LINAC beam shaping apparatus alters the beam path along a third plane, where the first, second, and third planes are not coplanar.

公开(公告)号：US20240145213A1

公开(公告)日：2024-05-02

申请号：US17977537

申请日：2022-10-31

Applicant: Axcelis Technologies, Inc.

Inventor： Neil Colvin ,  Paul Silverstein ,  Joshua Abeshaus

IPC: H01J37/317 ,  H01J37/063

CPC classification number: H01J37/3171 ,  H01J37/063

Abstract: An electrode apparatus for an ion implantation system has a base plate having a base plate aperture and at least one securement region. A securement apparatus is associated with each securement region, and a plurality of electrode rods are selectively coupled to the base plate by the securement apparatus. The plurality of electrode rods have a predetermined shape to define an optical region that is associated with the base plate aperture. An electrical coupling electrically connects to the plurality of electrode rods and is configured to electrically connect to an electrical potential. The plurality of electrode rods have a predetermined shape configured to define a path of a charged particle passing between the plurality of electrode rods based on the electrical potential. The plurality of electrode rods can define a suppressor or ground electrode downstream of an extraction aperture of an ion source.

公开(公告)号：US11923169B2

公开(公告)日：2024-03-05

申请号：US17168897

申请日：2021-02-05

Applicant: Axcelis Technologies, Inc.

Inventor： Causon Ko-Chuan Jen ,  Shu Satoh ,  Genise Bonacorsi ,  William Bintz

IPC: H01J37/317 ,  H01J37/08

CPC classification number: H01J37/3171 ,  H01J37/08 ,  H01J2237/0048 ,  H01J2237/022 ,  H01J2237/055 ,  H01J2237/31705

Abstract: A method for implanting high charge state ions into a workpiece while mitigating trace metal contamination includes generating desired ions at a first charge state from a desired species in an ion source, as well as generating trace metal ions of a contaminant species in a first ion beam. A charge-to-mass ratio of the desired ions and the trace metal ions is equal. The desired ions and trace metal ions are extracted from the ion source. At least one electron stripped from the desired ions to define a second ion beam of the desired ions at a second charge state and the trace metal ions. Only the desired ions from the second ion beam are selectively passed only through a charge selector to define a final ion beam of the desired ions at the second charge state and no trace metal ions, and the desired ions of the second charge state are implanted into a workpiece.

公开(公告)号：US11901198B2

公开(公告)日：2024-02-13

申请号：US16509915

申请日：2019-07-12

Applicant: Axcelis Technologies, Inc.

Inventor： John F. Baggett

IPC: H01L21/06 ,  H01J37/317 ,  H01L21/67

CPC classification number: H01L21/67098 ,  H01J37/3171 ,  H01L21/67248 ,  H01J2237/002

Abstract: A workpiece processing system has a cooling chamber enclosing a chamber volume. A workpiece support within the cooling chamber supports a workpiece having a material with an outgassing temperature, above which, the material outgases an outgas material at an outgassing rate that is toxic to personnel. A cooling apparatus selectively cools the workpiece to a predetermined temperature. A vacuum source and purge gas source selectively evacuates and selectively provides a purge gas to the chamber volume. A controller controls the cooling apparatus to cool the workpiece to the predetermined temperature, where the one or more materials are cooled below the outgassing temperature. The vacuum source and purge gas source are controlled to provide a predetermined heat transfer rate while removing the respective outgas material from the chamber volume.

公开(公告)号：US20230235449A1

公开(公告)日：2023-07-27

申请号：US18084705

申请日：2022-12-20

Applicant: Axcelis Technologies, Inc.

Inventor： David M. Burtner ,  Neil J. Bassom

IPC: C23C14/48 ,  C23C14/06 ,  H01J37/317

CPC classification number: C23C14/48 ,  C23C14/0605 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/31705

Abstract: An ion source for an ion implantation system is configured to form an ion beam from a predetermined species along a beamline, where the ion beam is at an initial energy. A deceleration component is configured to decelerate the ion beam to a final energy that is less than the initial energy. A workpiece support is configured to support a workpiece along a workpiece plane downstream of the deceleration component along the beamline. A beamline component is positioned downstream of the deceleration component along the beamline. The beamline component has a feature that is at least partially impinged by the ion beam, and where the feature has a surface having a predetermined angle of incidence with respect to the ion beam. The predetermined angle of incidence provides a predetermined sputter yield of the ion beam at the final energy that mitigates deposition of the ion species on the beamline component.

公开(公告)号：US20230139138A1

公开(公告)日：2023-05-04

申请号：US17514262

申请日：2021-10-29

Applicant: Axcelis Technologies, Inc.

Inventor： Wilhelm Platow ,  Shu Satoh ,  Neil Bassom

IPC: H01J37/317 ,  H01L21/265 ,  H01J37/08 ,  H05H9/00

Abstract: An ion implantation system has an ion source to generate an ion beam, and a mass analyzer to define a first ion beam having desired ions at a first charge state. A first linear accelerator accelerates the first ion beam to a plurality of first energies. A charge stripper strips electrons from the desired ions defining a second ion beam at a plurality of second charge states. A first dipole magnet spatially disperses and bends the second ion beam at a first angle. A charge defining aperture passes a desired charge state of the second ion beam while blocking a remainder of the plurality of second charge states. A quadrupole apparatus spatially focuses the second ion beam, defining a third ion beam. A second dipole magnet bends the third ion beam at a second angle. A second linear accelerator accelerates the third ion beam. A final energy magnet bends the third ion beam at a third angle, and wherein an energy defining aperture passes only the desired ions at a desired energy and charge state.