公开(公告)号：US20150255571A1

公开(公告)日：2015-09-10

申请号：US14341568

申请日：2014-07-25

Applicant: QUALCOMM Incorporated

Inventor： Jeffrey Junhao Xu ,  Kern Rim ,  John Jianhong Zhu ,  Stanley Seungchul Song ,  Mustafa Badaroglu ,  Vladimir Machkaoutsan ,  Da Yang ,  Choh Fei Yeap

IPC: H01L29/66 ,  H01L29/78

CPC classification number: H01L29/6681 ,  H01L29/4991 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/785

Abstract: In a particular embodiment, a method includes forming a first spacer structure on a dummy gate of a semiconductor device and forming a sacrificial spacer on the first spacer structure. The method also includes etching a structure of the semiconductor device to create an opening, removing the sacrificial spacer via the opening, and depositing a material to close to define a gap.

Abstract translation: 在特定实施例中，一种方法包括在半导体器件的伪栅极上形成第一间隔结构，并在第一间隔物结构上形成牺牲隔离物。 该方法还包括蚀刻半导体器件的结构以形成开口，经由开口去除牺牲隔离物，以及沉积材料以限定间隙。

公开(公告)号：US20150187774A1

公开(公告)日：2015-07-02

申请号：US14659893

申请日：2015-03-17

Applicant: QUALCOMM Incorporated

Inventor： Xia Li ,  Bin Yang ,  Stanley Seungchul Song

IPC: H01L27/092 ,  H01L29/06 ,  G06F17/50 ,  H01L21/8238 ,  H01L21/265 ,  H01L29/78 ,  H01L29/10

CPC classification number: H01L27/0924 ,  G06F17/5045 ,  G06F17/5068 ,  H01L21/265 ,  H01L21/823431 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823878 ,  H01L29/0607 ,  H01L29/1041 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/7851

Abstract: An apparatus comprises a substrate and a fin-type semiconductor device extending from the substrate. The fin-type semiconductor device comprises means for providing a first fin-type conduction channel having first and second regions, means for providing a second fin-type conduction channel having a fourth region above a third region, and means for shielding current leakage coupled to at least one of the first region and the third region. The first region has a first doping concentration greater than a second doping concentration of the second region. The first fin-type conduction channel comprises first ion implants implanted into the substrate at a first depth and second ion implants implanted into the substrate at a different depth. The third region has a third doping concentration, and the fourth region has a fourth doping concentration.

Abstract translation: 一种装置包括从衬底延伸的衬底和鳍式半导体器件。 翅片型半导体器件包括用于提供具有第一和第二区域的第一鳍式传导沟道的装置，用于提供具有在第三区域上方的第四区域的第二鳍式传导沟道的装置，以及用于屏蔽漏电耦合到 第一区域和第三区域中的至少一个。 第一区域具有大于第二区域的第二掺杂浓度的第一掺杂浓度。 第一鳍型传导通道包括在第一深度处植入衬底中的第一离子植入物和在不同深度处植入衬底中的第二离子植入物。 第三区域具有第三掺杂浓度，第四区域具有第四掺杂浓度。

公开(公告)号：US08999792B2

公开(公告)日：2015-04-07

申请号：US13834594

申请日：2013-03-15

Applicant: QUALCOMM Incorporated

Inventor： Xia Li ,  Bin Yang ,  Stanley Seungchul Song

IPC: H01L21/336 ,  H01L29/786 ,  G06F17/50 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L27/0924 ,  G06F17/5045 ,  G06F17/5068 ,  H01L21/265 ,  H01L21/823431 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823878 ,  H01L29/0607 ,  H01L29/1041 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/7851

Abstract: An apparatus comprises a substrate and a fin-type semiconductor device extending from the substrate. The fin type semiconductor device comprises a fin that comprises a first region having a first doping concentration and a second region having a second doping concentration. The first doping concentration is greater than the second doping concentration. The fin type semiconductor device also comprises an oxide layer. Prior to source and drain formation of the fin-type semiconductor device, a doping concentration of the oxide layer is less than the first doping concentration.

Abstract translation: 一种装置包括从衬底延伸的衬底和鳍式半导体器件。 翅片型半导体器件包括鳍，其包括具有第一掺杂浓度的第一区域和具有第二掺杂浓度的第二区域。 第一掺杂浓度大于第二掺杂浓度。 翅片型半导体器件还包括氧化物层。 在鳍式半导体器件的源极和漏极形成之前，氧化物层的掺杂浓度小于第一掺杂浓度。

公开(公告)号：US20150076704A1

公开(公告)日：2015-03-19

申请号：US14026893

申请日：2013-09-13

Applicant: QUALCOMM Incorporated

Inventor： Stanley Seungchul Song ,  Choh Fei Yeap ,  Zhongze Wang ,  John Jianhong Zhu

IPC: H01L23/522 ,  G06F17/50 ,  H01L21/768

CPC classification number: H01L21/76816 ,  G06F17/5068 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/66 ,  H01L2223/6677 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a particular embodiment, a method includes forming a second hardmask layer adjacent to a first sidewall structure and adjacent to a mandrel of a semiconductor device. A top portion of the mandrel is exposed prior to formation of the second hardmask layer. The method further includes removing the first sidewall structure to expose a first portion of a first hardmask layer. The method also includes etching the first portion of the first hardmask layer to expose a second portion of a dielectric material. The method also includes etching the second portion of the dielectric material to form a first trench. The method also includes forming a first metal structure within the first trench.

Abstract translation: 在特定实施例中，一种方法包括形成与第一侧壁结构相邻并与半导体器件的心轴相邻的第二硬掩模层。 心轴的顶部在形成第二硬掩模层之前被暴露。 该方法还包括去除第一侧壁结构以暴露第一硬掩模层的第一部分。 该方法还包括蚀刻第一硬掩模层的第一部分以暴露电介质材料的第二部分。 该方法还包括蚀刻介电材料的第二部分以形成第一沟槽。 该方法还包括在第一沟槽内形成第一金属结构。

公开(公告)号：US20140264485A1

公开(公告)日：2014-09-18

申请号：US13834594

申请日：2013-03-15

Applicant: QUALCOMM INCORPORATED

Inventor： Xia Li ,  Bin Yang ,  Stanley Seungchul Song

IPC: H01L29/66 ,  G06F17/50 ,  H01L29/78

CPC classification number: H01L27/0924 ,  G06F17/5045 ,  G06F17/5068 ,  H01L21/265 ,  H01L21/823431 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823878 ,  H01L29/0607 ,  H01L29/1041 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/7851

Abstract: An apparatus comprises a substrate and a fin-type semiconductor device extending from the substrate. The fin type semiconductor device comprises a fin that comprises a first region having a first doping concentration and a second region having a second doping concentration. The first doping concentration is greater than the second doping concentration. The fin type semiconductor device also comprises an oxide layer. Prior to source and drain formation of the fin-type semiconductor device, a doping concentration of the oxide layer is less than the first doping concentration.

Abstract translation: 一种装置包括从衬底延伸的衬底和鳍式半导体器件。 翅片型半导体器件包括鳍，其包括具有第一掺杂浓度的第一区域和具有第二掺杂浓度的第二区域。 第一掺杂浓度大于第二掺杂浓度。 翅片型半导体器件还包括氧化物层。 在鳍式半导体器件的源极和漏极形成之前，氧化物层的掺杂浓度小于第一掺杂浓度。