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    MAGNETORESISTIVE (MR) SENSORS EMPLOYING DUAL MR DEVICES FOR DIFFERENTIAL MR SENSING
    133.
    发明申请
    MAGNETORESISTIVE (MR) SENSORS EMPLOYING DUAL MR DEVICES FOR DIFFERENTIAL MR SENSING 审中-公开

    公开(公告)号：US20180074016A1

    公开(公告)日：2018-03-15

    申请号：US15266342

    申请日：2016-09-15

    Applicant: QUALCOMM Incorporated

    Inventor： Wei-Chuan Chen ,  Jung Pill Kim ,  Seung Hyuk Kang

    IPC: G01N27/74 ,  G01R33/09

    CPC classification number: G01N27/745 ,  B82Y25/00 ,  G01R33/09 ,  G01R33/093 ,  G01R33/098

    Abstract: Magnetoresistive (MR) sensors employing dual MR devices for differential MR sensing are provided. These MR sensors may be used as biosensors to detect the presence of biological materials as an example. An MR sensor includes dual MR sensor devices that may be tunnel magnetoresistive (TMR) devices or giant magnetoresistive (GMR) devices as examples. The MR devices are arranged such that a channel is formed between the MR devices for receiving magnetic nanoparticles. A magnetic stray field generated by the magnetic nanoparticles causes free layers in the MR devices to rotate in opposite directions, thus causing differential resistances between the MR devices for greater sensing sensitivity. Further, as another aspect, by providing the channel between the MR devices, the magnetic stray field generated by the magnetic nanoparticles can more easily rotate the magnetic moment orientation of the free layers in the MR devices, thus further increasing sensitivity.

    SHADOW-EFFECT COMPENSATED FABRICATION OF MAGNETIC TUNNEL JUNCTION (MTJ) ELEMENTS
    136.
    发明申请
    SHADOW-EFFECT COMPENSATED FABRICATION OF MAGNETIC TUNNEL JUNCTION (MTJ) ELEMENTS 有权
    磁悬浮连接（MTJ）元件的阴影补偿制造

    公开(公告)号：US20170047510A1

    公开(公告)日：2017-02-16

    申请号：US14824507

    申请日：2015-08-12

    Applicant: QUALCOMM Incorporated

    Inventor： Wei-Chuan Chen ,  Yu Lu ,  Chando Park ,  Seung Hyuk Kang

    IPC: H01L43/12 ,  H01L43/08 ,  H01L27/22 ,  H01L43/02

    CPC classification number: H01L43/12 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08

    Abstract: Shadow-effect compensated fabrication of magnetic tunnel junction (MTJ) semiconductor elements is disclosed. Providing shadow-effect compensated fabrication of MTJ elements can provide reduced free layer sizing for enhanced MTJ operational margin. In certain aspects, to reduce size of a free layer during fabrication of an MTJ to provide enhanced write and retention symmetry, ion beam etching (IBE) fabrication process is employed to fabricate a free layer smaller than the pinned layer. To avoid asymmetrical footing being fabricated in free layer due to shadow-effect of neighboring MTJs, an ion beam directed at the MTJ is shadow-effect compensated. The angle of incidence of the ion beam directed at the MTJ is varied as the MTJ is rotated to be less steep when another MTJ is in directional line of the ion beam and the MTJ being fabricated. Thus, the free layer is etched more uniformly in the MTJ while avoiding increased etching damage.

    Abstract translation: 公开了磁隧道结（MTJ）半导体元件的阴影效应补偿制造。 提供影子补偿制造的MTJ元件可以提供减少的自由层施胶，以提高MTJ的运行裕度。 在某些方面，为了减少制造MTJ期间的自由层的尺寸以提供增强的写入和保持对称性，使用离子束蚀刻（IBE）制造工艺来制造小于被钉扎层的自由层。 为了避免由于相邻的MTJ的阴影效应而在自由层中制造不对称的基脚，指向MTJ的离子束是阴影效应补偿的。 当MTJ在离子束的方向线和制造的MTJ的方向线上时，指向MTJ的离子束的入射角度随着MTJ旋转而不太陡峭而变化。 因此，在MTJ中更均匀地蚀刻自由层，同时避免增加蚀刻损伤。

    Shared source line magnetic tunnel junction (MTJ) bit cells employing uniform MTJ connection patterns for reduced area
    139.
    发明授权
    Shared source line magnetic tunnel junction (MTJ) bit cells employing uniform MTJ connection patterns for reduced area 有权
    共享源极线磁隧道结（MTJ）位单元采用均匀的MTJ连接模式，减少面积

    公开(公告)号：US09496314B1

    公开(公告)日：2016-11-15

    申请号：US14853116

    申请日：2015-09-14

    Applicant: QUALCOMM Incorporated

    Inventor： Yu Lu ,  Xiaochun Zhu ,  Xia Li ,  Seung Hyuk Kang

    IPC: H01L29/66 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12 ,  H01L21/8234

    CPC classification number: H01L27/228 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L21/823475 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

    Abstract: Shared source line magnetic tunnel junction (MTJ) bit cells employing uniform MTJ connection patterns for reduced area are disclosed. In one aspect, a two (2) transistor, two (2) MTJ (2T2MTJ) bit cell includes a shared source line system having first and second source lines. A uniform MTJ connection pattern results in the first source line disposed in an upper metal layer and electrically coupled to a free layer of a first MTJ, and the second source line disposed in a lower metal layer and electrically coupled to a second access transistor. Middle segments are disposed in middle metal layers to reserve the middle metal layers for strap segments of a strap cell that may be used to electrically couple the first and second source lines. Electrically coupling the first and second source lines using the strap cell allows each MTJ to logically share a single source line.

    Abstract translation: 公开了采用均匀MTJ连接图案的共享源极线磁隧道结（MTJ）位单元，以减小面积。 一方面，两（2）晶体管，两（2）MTJ（2T2MTJ）位单元包括具有第一和第二源极线的共享源极线系统。 均匀的MTJ连接图案使得第一源极线设置在上金属层中并电耦合到第一MTJ的自由层，并且第二源极线设置在下金属层中并电耦合到第二存取晶体管。 中间部分设置在中间金属层中，以保留可用于电耦合第一和第二源极线的带状电池的带段的中间金属层。 使用带单元电连接第一和第二源极线允许每个MTJ在逻辑上共享单个源极线。

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