公开(公告)号：US20200303154A1

公开(公告)日：2020-09-24

申请号：US16824069

申请日：2020-03-19

Applicant: Axcelis Technologies, Inc.

Inventor： Neil Bassom ,  Neil Colvin ,  Tseh-Jen Hsieh ,  Michael Ameen

IPC: H01J37/08 ,  H01J37/30

Abstract: An ion source is configured to form an ion beam and has an arc chamber enclosing an arc chamber environment. A reservoir apparatus can be configured as a repeller and provides a liquid metal to the arc chamber environment. A biasing power supply electrically biases the reservoir apparatus with respect to the arc chamber to vaporize the liquid metal to form a plasma in the arc chamber environment. The reservoir apparatus has a cup and cap defining a reservoir environment for the liquid metal that is fluidly coupled to the arc chamber environment by holes in the cap. Features extend from the cup into the reservoir and contact the liquid metal to feed the liquid metal toward the arc chamber environment by capillary action. A structure, surface area, roughness, and material modifies the capillary action. The feature can be an annular ring, rod, or tube extending into the liquid metal.

公开(公告)号：US10720354B2

公开(公告)日：2020-07-21

申请号：US16114745

申请日：2018-08-28

Applicant: Axcelis Technologies, Inc.

Inventor： Neil James Bassom

IPC: G01B11/26 ,  G02B5/30 ,  H01L21/68 ,  H01L21/66

Abstract: A workpiece alignment system has a light emission apparatus to direct a beam of light toward a first side of a workpiece through a first polarizer apparatus. A light receiver apparatus positioned on a second side of the workpiece receives the beam of light through a second polarizer apparatus between the workpiece and the light receiver apparatus. A workpiece support supports the workpiece. A rotation device selectively supports and rotates the workpiece support about a support axis. A controller determines a position of the workpiece based on an amount of the beam of light received by the light receiver apparatus. The controller determines a position of the workpiece when the workpiece is supported and rotated based, at least in part, on a rotational position of the workpiece support and at least a portion of the beam of light received by the light receiver apparatus.

公开(公告)号：US10689752B2

公开(公告)日：2020-06-23

申请号：US16192838

申请日：2018-11-16

Applicant: Axcelis Technologies, Inc.

Inventor： David A. Kirkwood ,  Joseph F. Valinski

IPC: C23C14/48 ,  H01J37/00 ,  H01J37/317 ,  H01L21/265

Abstract: An electrically conductive component is provided for a near-wafer environment of an ion implantation system, where the component has a carbon-based substrate having a microscopically textured surface overlying a macroscopically textured surface. The macroscopically textured surface is a mechanically, chemically, or otherwise roughened surface. The microscopically textured surface can be a converted surface formed by a chemical reaction forming a non-stoichiometric silicon and carbon surface. The one or more components can be a dose cup, exit aperture, and tunnel wall. The carbon-based substrate can be graphite. The microscopically textured surface can be a modified graphite surface. No defined interface layer exists between the microscopically textured surface and macroscopically textured surface. The carbon-based graphite is selected based on a final porosity and grain size of the graphite.

公开(公告)号：US20200066478A1

公开(公告)日：2020-02-27

申请号：US16106745

申请日：2018-08-21

Applicant: Axcelis Technologies, Inc.

Inventor： Bo Vanderberg ,  Edward Eisner

IPC: H01J37/147 ,  H01J37/317 ,  H01F7/20

Abstract: A scanning magnet is positioned downstream of a mass resolving magnet of an ion implantation system and is configured to control a path of an ion beam downstream of the mass resolving magnet for a scanning or dithering of the ion beam. The scanning magnet has a yoke having a channel defined therein. The yoke is ferrous and has a first side and a second side defining a respective entrance and exit of the ion beam. The yoke has a plurality of laminations stacked from the first side to the second side, wherein at least a portion of the plurality of laminations associated with the first side and second side comprise one or more slotted laminations having plurality of slots defined therein.

公开(公告)号：US10553392B1

公开(公告)日：2020-02-04

申请号：US16218884

申请日：2018-12-13

Applicant: Axcelis Technologies, Inc.

Inventor： Edward Eisner ,  Bo Vanderberg

IPC: H01J37/153 ,  H01J37/317 ,  H01J37/147

Abstract: An ion implantation system and method provide a non-uniform flux of a ribbon ion beam. A spot ion beam is formed and provided to a scanner, and a scan waveform having a time-varying potential is applied to the scanner. The ion beam is scanned by the scanner across a scan path, generally defining a scanned ion beam comprised of a plurality of beamlets. The scanned beam is then passed through a corrector apparatus. The corrector apparatus is configured to direct the scanned ion beam toward a workpiece at a generally constant angle of incidence across the workpiece. The corrector apparatus further comprises a plurality of magnetic poles configured to provide a non-uniform flux profile of the scanned ion beam at the workpiece.

公开(公告)号：US10515780B1

公开(公告)日：2019-12-24

申请号：US16225298

申请日：2018-12-19

Applicant: Axcelis Technologies, Inc.

Inventor： Yusef Nouri

IPC: H01J37/317 ,  H01J37/08 ,  H01J37/24 ,  H01J37/302 ,  H01J37/248

Abstract: The present invention is directed to circuits, systems, and methods to quickly to quench an arc that may form between high voltage electrodes associated with an ion source to shorten the duration of the arc and mitigate non-uniform ion implantations. In one example, an arc detection circuit for detecting an arc in an ion implantation system includes an analog-to-digital converter (ADC) and an analysis circuit. The ADC is configured to convert a sensing current indicative of a current being supplied to an electrode in the ion implantation system to a digital current signal that quantifies the sensing current. The analysis circuit is configured to analyze the digital current signal to determine if the digital current signal meets threshold parameter value and in response to the digital current signal meeting the threshold parameter value, provide an arc detection signal to a trigger control circuit that activates an arc quenching mechanism.

公开(公告)号：US20190304820A1

公开(公告)日：2019-10-03

申请号：US16367948

申请日：2019-03-28

Applicant: Axcelis Technologies, Inc.

Inventor： John F. Baggett ,  Ronald N. Reece ,  Petros Miltiades Kopalidis

IPC: H01L21/67 ,  H01L21/683 ,  H01L21/687 ,  H01J37/317 ,  H01J37/20

Abstract: A thermal chuck selectively retains a workpiece on a clamping surface. The thermal chuck has one or more heaters to selectively heat the clamping surface and the workpiece. A thermal monitoring device determines a temperature of a surface of the workpiece when the workpiece resides on the clamping surface, defining one or more measured temperatures. A controller selectively energizes the one or more heaters based on the one or more measured temperatures. The thermal monitoring device may be one or more of a thermocouple or RTD in selective contact with the surface of the workpiece and an emissivity sensor or pyrometer not in contact with the surface. The thermal chuck can be part of an ion implantation system configured to implant ions into the workpiece. The controller can be further configured to control the heaters based on the measured temperatures.

公开(公告)号：US10395891B1

公开(公告)日：2019-08-27

申请号：US15909318

申请日：2018-03-01

Applicant: Axcelis Technologies, Inc.

Inventor： Michael Paul Cristoforo ,  Justin White McCabe

IPC: H01J37/05 ,  H01J37/09 ,  H01J37/147 ,  H01J37/304 ,  H01J37/317

Abstract: A resolving aperture assembly for an ion implantation system has a first plate and a second plate, where the first plate and second plate generally define a resolving aperture therebetween. A position of the first plate with respect to the second plate generally defines a width of the resolving aperture. One or more actuators are operably coupled to one or more of the first plate and second plate and are configured to selectively vary the position the first plate and second plate with respect to one another, thus selectively varying the width of the resolving aperture. A servo motor precisely varies the resolving aperture width and a pneumatic cylinder independently selectively closes the resolving aperture. A downstream position actuator varies a position of the resolving aperture along a path of the ion beam, and a controller controls the one or more actuators based on desired properties of the ion beam.

公开(公告)号：US10361081B2

公开(公告)日：2019-07-23

申请号：US15807652

申请日：2017-11-09

Applicant: Axcelis Technologies, Inc.

Inventor： Neil Colvin ,  Tseh-Jen Hsieh

IPC: H01L21/265 ,  H01J37/317

Abstract: Processes and systems for carbon ion implantation include utilizing phosphine as a co-gas with a carbon oxide gas in an ion source chamber. In one or more embodiments, carbon implantation with the phosphine co-gas is in combination with the lanthanated tungsten alloy ion source components, which advantageously results in minimal oxidation of the cathode and cathode shield, among other components within the ion source chamber.

公开(公告)号：US10128084B1

公开(公告)日：2018-11-13

申请号：US15707473

申请日：2017-09-18

Applicant: Axcelis Technologies, Inc.

Inventor： John Baggett ,  Joe Ferrara ,  Brian Terry

IPC: H01L21/67 ,  G21K5/08 ,  H01J37/317 ,  H01L21/265 ,  H01J37/302 ,  H01J37/147 ,  G01K7/22 ,  H01J37/18

Abstract: A system and method is provided maintaining a temperature of a workpiece during an implantation of ions in an ion implantation system, where the ion implantation system is characterized with a predetermined set of parameters. A heated chuck is provided at a first temperature and heats the workpiece to the first temperature. Ions are implanted into the workpiece concurrent with the heating, and thermal energy is imparted into the workpiece by the ion implantation. A desired temperature of the workpiece is maintained within a desired accuracy during the implantation of ions by selectively heating the workpiece on the heated chuck to a second temperature. The desired temperature is maintained based, at least in part, on the characterization of the ion implantation system. Thermal energy imparted into the workpiece from the implantation is mitigated by the selective heating of the workpiece on the heated chuck at the second temperature.