公开(公告)号：US11823858B2

公开(公告)日：2023-11-21

申请号：US17705503

申请日：2022-03-28

Applicant: Axcelis Technologies, Inc.

Inventor： Wilhelm Platow ,  Neil Bassom

IPC: A61N5/10 ,  H01J37/317 ,  H01J37/147 ,  G21K5/04 ,  H01L21/04

CPC classification number: H01J37/3171 ,  G21K5/04 ,  H01J37/1475 ,  H01L21/0415

Abstract: An ion implantation system has a mass analyzing magnet having interior and exterior region and defining a first entrance, second entrance, and an exit. A first ion source defines a first ion beam directed toward the first entrance along a first beam path. A second ion source defines a second ion beam directed toward the second entrance along a second beam path. A magnet current source supplies a magnet current to the mass analyzing magnet. Magnet control circuitry controls a polarity of the magnet current based on a formation of the first or second ion beam. The mass analyzing magnet mass analyzes the respective first or second ion beam to define defining a mass analyzed ion beam along a mass analyzed beam path. At least one shield in the interior or exterior region prevents line-of-sight between the first and second ion sources. Beamline components modify the mass analyzed ion beam.

公开(公告)号：US20230343558A1

公开(公告)日：2023-10-26

申请号：US18336337

申请日：2023-06-16

Applicant: Axcelis Technologies, Inc.

Inventor： Neil J. Bassom ,  Joshua Abeshaus ,  David Sporleder ,  Neil Colvin ,  Joseph Valinski ,  Michael Cristoforo ,  Vladimir Romanov ,  Pradeepa Kowrikan Subrahmnya

IPC: H01J37/32 ,  H01J37/08

CPC classification number: H01J37/32412 ,  H01J37/08

Abstract: An ion source has an arc chamber defining an arc chamber volume. A reservoir is coupled to the arc chamber, defining a reservoir volume. The reservoir receives a source species to define a liquid within the reservoir volume. A conduit fluidly couples the reservoir volume to the arc chamber volume. First and second openings of the conduit are open to the respective reservoir and arc chamber volume. A heat source selectively heats the reservoir to melt the source species at a predetermined temperature. A liquid control apparatus controls a first volume of the liquid within the reservoir volume to define a predetermined supply of the liquid to the arc chamber volume. The liquid control apparatus is a pressurized gas source fluidly coupled to the reservoir to supply a gas to the reservoir and provide a predetermined amount of liquid to the arc chamber.

公开(公告)号：US11699565B2

公开(公告)日：2023-07-11

申请号：US17514302

申请日：2021-10-29

Applicant: Axcelis Technologies, Inc.

Inventor： Neil K. Colvin ,  Neil Bassom ,  Edward Moore

IPC: H01J37/08 ,  H01J37/317

CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/05

Abstract: An ion implantation system, ion source, and method are provided having a gaseous aluminum-based ion source material. The gaseous aluminum-based ion source material can be, or include, dimethylaluminum chloride (DMAC), where the DMAC is a liquid that transitions into vapor phase at room temperature. An ion source receives and ionizes the gaseous aluminum-based ion source material to form an ion beam. A low-pressure gas bottle supplies the DMAC as a gas to an arc chamber of the ion source by a primary gas line. A separate, secondary gas line supplies a co-gas, such as a fluorine-containing molecule, to the ion source, where the co-gas and DMAC reduce an energetic carbon cross-contamination and/or increase doubly charged aluminum.

公开(公告)号：US11699563B2

公开(公告)日：2023-07-11

申请号：US17339085

申请日：2021-06-04

Applicant: Axcelis Technologies, Inc.

Inventor： Neil K. Colvin ,  Neil Bassom ,  Xiao Xu

IPC: H01J27/22 ,  H01J37/08

CPC classification number: H01J27/22 ,  H01J37/08 ,  H01J2237/08 ,  H01J2237/31701

Abstract: An ion implantation system, ion source, and method are provided, where an ion source is configured to ionize an aluminum-based ion source material and to form an ion beam and a by-product including a non-conducting material. An etchant gas mixture has a predetermined concentration of fluorine and a noble gas that is in fluid communication with the ion source. The predetermined concentration of fluorine is associated with a predetermined health safety level, such as approximately a 20% maximum concentration of fluorine. The etchant gas mixture can have a co-gas with a concentration less than approximately 5% of argon. The aluminum-based ion source material can be a ceramic member, such as a repeller shaft, a shield, or other member within the ion source.

公开(公告)号：US20230038392A1

公开(公告)日：2023-02-09

申请号：US17881020

申请日：2022-08-04

Applicant: Axcelis Technologies, Inc.

Inventor： James S. DeLuca ,  Dwight Roh ,  Patrick Heres ,  Atul Gupta

IPC: H01J37/147 ,  H01J37/317 ,  H01J37/20 ,  H01J37/304 ,  C23C14/48 ,  C23C14/54

Abstract: Ion implantation systems and methods implant varying energies of an ion beam across a workpiece in a serial single-workpiece end station, where electrodes of an acceleration/deceleration stage, bend electrode and/or energy filter control a final energy or path of the ion beam to the workpiece. The bend electrode or an energy filter can form part of the acceleration/deceleration stage or can be positioned downstream. A scanning apparatus scans the ion beam and/or the workpiece, and a power source provides varied electrical bias signals to the electrodes. A controller selectively varies the electrical bias signals concurrent with the scanning of the ion beam and/or workpiece through the ion beam based on a desired ion beam energy at the workpiece. A waveform generator can provide the variation and synchronize the electrical bias signals supplied to the acceleration/deceleration stage, bend electrode and/or energy filter.

公开(公告)号：US11521821B2

公开(公告)日：2022-12-06

申请号：US17223360

申请日：2021-04-06

Applicant: Axcelis Technologies, Inc.

Inventor： Steven T. Drummond ,  Neil Colvin ,  Paul Silverstein

IPC: H01J37/08 ,  H01L21/225 ,  H01J37/317 ,  H01J27/14

Abstract: An ion source has an arc chamber having one or more arc chamber walls defining and interior region of the arc chamber. A cathode electrode is disposed along an axis. A repeller has a repeller shaft and a ceramic target member separated by a gap. The repeller shaft is not in electrical or mechanical contact with the target member, and the repeller shaft is configured to indirectly heat the target member. The target member, can be a cylinder encircling the repeller shaft, where the gap separates the cylinder from the repeller shaft. A top cap can enclose the cylinder can be separated from a top repeller surface of the repeller shaft by the gap. A target hole can be in the top cap. The target member can be supported by a bottom liner of the arc chamber or a support member mechanically and electrically coupled to the repeller shaft.

公开(公告)号：US11170967B2

公开(公告)日：2021-11-09

申请号：US16824069

申请日：2020-03-19

Applicant: Axcelis Technologies, Inc.

Inventor： Neil Bassom ,  Neil Colvin ,  Tseh-Jen Hsieh ,  Michael Ameen

IPC: H01J37/08 ,  H01J37/30 ,  H01J49/10 ,  H01J27/02

Abstract: An ion source is configured to form an ion beam and has an arc chamber enclosing an arc chamber environment. A reservoir apparatus can be configured as a repeller and provides a liquid metal to the arc chamber environment. A biasing power supply electrically biases the reservoir apparatus with respect to the arc chamber to vaporize the liquid metal to form a plasma in the arc chamber environment. The reservoir apparatus has a cup and cap defining a reservoir environment for the liquid metal that is fluidly coupled to the arc chamber environment by holes in the cap. Features extend from the cup into the reservoir and contact the liquid metal to feed the liquid metal toward the arc chamber environment by capillary action. A structure, surface area, roughness, and material modifies the capillary action. The feature can be an annular ring, rod, or tube extending into the liquid metal.

公开(公告)号：US11037754B2

公开(公告)日：2021-06-15

申请号：US16720499

申请日：2019-12-19

Applicant: Axcelis Technologies, Inc.

Inventor： Edward Eisner ,  Bo Vanderberg

IPC: H01J37/153 ,  H01J37/317 ,  H01J37/147

Abstract: An ion implantation system and method provide a non-uniform flux of a ribbon ion beam. A spot ion beam is formed and provided to a scanner, and a scan waveform having a time-varying potential is applied to the scanner. The ion beam is scanned by the scanner across a scan path, generally defining a scanned ion beam comprised of a plurality of beamlets. The scanned beam is then passed through a corrector apparatus. The corrector apparatus is configured to direct the scanned ion beam toward a workpiece at a generally constant angle of incidence across the workpiece. The corrector apparatus further comprises a plurality of magnetic poles configured to provide a non-uniform flux profile of the scanned ion beam at the workpiece.

公开(公告)号：US11011397B2

公开(公告)日：2021-05-18

申请号：US16227399

申请日：2018-12-20

Applicant: Axcelis Technologies, Inc.

Inventor： John Baggett

IPC: H01L21/67 ,  H01L21/683 ,  H01L21/687

Abstract: A workpiece processing system and method provides an end effector coupled to a workpiece transfer apparatus. The end effector has support members for selectively contacting and supporting a workpiece. One or more temperature sensors are coupled to the support members and are configured to contact a backside of the workpiece to measure and define one or more measured temperatures of the workpiece. A heated chuck has a support surface at a predetermined temperature, and is configured to radiate heat from the support surface. A controller control the workpiece transfer apparatus to selectively support the workpiece at a predetermined distance from the support surface of the heated chuck to radiatively heat the workpiece, and to selectively transfer the workpiece from the end effector to the support surface of the heated chuck based, at least in part, on the one or more measured temperatures.

公开(公告)号：US20210057182A1

公开(公告)日：2021-02-25

申请号：US16544000

申请日：2019-08-19

Applicant: Axcelis Technologies, Inc.

Inventor： Shu Satoh

IPC: H01J37/08 ,  H01J37/05 ,  H01J37/317

Abstract: Methods and a system of an ion implantation system are configured for increasing beam current above a maximum kinetic energy of a first charge state from an ion source without changing the charge state at the ion source. Ions having a first charge state are provided from an ion source and are selected into a first RF accelerator and accelerated in to a first energy. The ions are stripped to convert them to ions having various charge states. A charge selector receives the ions of various charge states and selects a final charge state at the first energy. A second RF accelerator accelerates the ions to final energy spectrum. A final energy filter filters the ions to provide the ions at a final charge state at a final energy to a workpiece.