公开(公告)号：US20230038392A1

公开(公告)日：2023-02-09

申请号：US17881020

申请日：2022-08-04

Applicant: Axcelis Technologies, Inc.

Inventor： James S. DeLuca ,  Dwight Roh ,  Patrick Heres ,  Atul Gupta

IPC: H01J37/147 ,  H01J37/317 ,  H01J37/20 ,  H01J37/304 ,  C23C14/48 ,  C23C14/54

Abstract: Ion implantation systems and methods implant varying energies of an ion beam across a workpiece in a serial single-workpiece end station, where electrodes of an acceleration/deceleration stage, bend electrode and/or energy filter control a final energy or path of the ion beam to the workpiece. The bend electrode or an energy filter can form part of the acceleration/deceleration stage or can be positioned downstream. A scanning apparatus scans the ion beam and/or the workpiece, and a power source provides varied electrical bias signals to the electrodes. A controller selectively varies the electrical bias signals concurrent with the scanning of the ion beam and/or workpiece through the ion beam based on a desired ion beam energy at the workpiece. A waveform generator can provide the variation and synchronize the electrical bias signals supplied to the acceleration/deceleration stage, bend electrode and/or energy filter.