Operational-task-oriented system and method for dynamically adjusting operational environment

    公开(公告)号:US09612875B2

    公开(公告)日:2017-04-04

    申请号:US14541377

    申请日:2014-11-14

    CPC classification number: G06F9/5061 G06F9/4856 G06F9/5005 G06F9/5027

    Abstract: The present invention provides an operational-task-oriented system and method for dynamically adjusting operational environment applicable to a computer cluster. Each operational node of the computer cluster has two or more operational systems installed. After receiving the operational task, the control node estimates the time required for completing different tasks requiring different operational systems by appropriate operational nodes and compares the estimated finish time and the assigned finish time for judging how to adjust the operating system running in the operational nodes. Thereby, the operational task can be completed in the assigned finish time. Another method is to use the control node to analyze the proportions of the tasks requiring different operational systems in an operational task and hence adjusts the operational system running in an operational node according to the proportion of requirement. Thereby, the operational task can be completed in the shortest time.

    Transistor device structure that includes polycrystalline semiconductor thin film that has large grain size
    113.
    发明授权
    Transistor device structure that includes polycrystalline semiconductor thin film that has large grain size 有权
    晶体管器件结构包括晶粒尺寸大的多晶半导体薄膜

    公开(公告)号:US09455350B2

    公开(公告)日:2016-09-27

    申请号:US14224503

    申请日:2014-03-25

    Abstract: A transistor device structure includes a substrate, a first polycrystalline semiconductor thin film and a first transistor unit. The first polycrystalline semiconductor thin film is disposed on the substrate. A grain diameter of the first polycrystalline semiconductor thin film is greater than 1 micrometer and a thickness of the first polycrystalline semiconductor thin film is less than three hundredths of the grain diameter. The first transistor unit is disposed on the first polycrystalline semiconductor thin film and includes a first gate dielectric layer and a first gate structure. The first gate dielectric layer is disposed on a surface of the first polycrystalline thin film semiconductor. The first gate structure is disposed on a surface of the first gate dielectric layer.

    Abstract translation: 晶体管器件结构包括衬底,第一多晶半导体薄膜和第一晶体管单元。 第一多晶半导体薄膜设置在基板上。 第一多晶半导体薄膜的晶粒直径大于1微米,第一多晶半导体薄膜的厚度小于晶粒直径的百分之三十。 第一晶体管单元设置在第一多晶半导体薄膜上,并且包括第一栅极介电层和第一栅极结构。 第一栅介质层设置在第一多晶薄膜半导体的表面上。 第一栅极结构设置在第一栅极介电层的表面上。

    PRECAST SEGMENT, STACKING STRUCTURE AND ENERGY DISSIPATION COLUMN THEREOF
    114.
    发明申请
    PRECAST SEGMENT, STACKING STRUCTURE AND ENERGY DISSIPATION COLUMN THEREOF 有权
    预测分段,堆积结构和能量消耗列

    公开(公告)号:US20160265212A1

    公开(公告)日:2016-09-15

    申请号:US14740817

    申请日:2015-06-16

    Abstract: A precast segment suitable for block-stacking concept is disclosed. The precast segment includes a first surface, an opposite second surface, plural through holes, and plural male-female connecting sets. The through holes extend from the first surface and toward the second surface to communicate between the first surface and the second surface. Each male-female connecting set includes a shear key and a joint hole, wherein the shear key protrudes from one of the first surface and the second surface to serve as a male connecting unit, and the joint hole is formed in the other of the first surface and the second surface to serve as a female connecting unit. Accordingly, the precast segments can be block-stacked by mortise-and-tenon joints to construct a bridge pier system. Compared to the conventional construction methodology, the present invention can enhance the efficiency of segment fabrication and avoid high prestress force.

    Abstract translation: 公开了一种适用于块堆叠概念的预制段。 预制段包括第一表面,相对的第二表面,多个通孔和多个阳 - 阴连接组。 通孔从第一表面延伸到第二表面,以在第一表面和第二表面之间连通。 每个公 - 母连接组包括剪切键和接合孔,其中剪切键从第一表面和第二表面之一突出以用作阳连接单元,并且接头孔形成在第一 表面和第二表面用作阴连接单元。 因此,预制区段可以通过榫眼和榫头关节来堆叠,以构建桥墩系统。 与传统施工方法相比,本发明可以提高节段制造的效率,避免高预应力。

    ENCLOSED-CHANNEL REACTOR METHOD TO MANUFACTURE CATALYSTS OR SUPPORT MATERIALS
    115.
    发明申请
    ENCLOSED-CHANNEL REACTOR METHOD TO MANUFACTURE CATALYSTS OR SUPPORT MATERIALS 审中-公开
    用于制造催化剂或支持材料的封闭式通道反应器

    公开(公告)号:US20160256863A1

    公开(公告)日:2016-09-08

    申请号:US15156916

    申请日:2016-05-17

    Abstract: The present invention provides methods and designs of enclosed-channel reactor system for manufacturing catalysts or supports. Both of the configuration designs force the gaseous precursors and purge gas flow through the channel surface of reactor. The precursors will transform to thin film or particle catalysts or supports under adequate reaction temperature, working pressure and gas concentration. The reactor body is either sealed or enclosed for isolation from atmosphere. Another method using super ALD cycles is also proposed to grow alloy catalysts or supports with controllable concentration. The catalysts prepared by the method and system in the present invention are noble metals, such as platinum, palladium, rhodium, ruthenium, iridium and osmium, or transition metals such as iron, silver, cobalt, nickel and tin, while supports are silicon oxide, aluminum oxide, zirconium oxide, cerium oxide or magnesium oxide, or refractory metals, which can be chromium, molybdenum, tungsten or tantalum.

    Abstract translation: 本发明提供用于制造催化剂或载体的封闭通道反应器系统的方法和设计。 两种配置设计都迫使气态前体和吹扫气体流过反应器的通道表面。 前体将在足够的反应温度,工作压力和气体浓度下转化为薄膜或颗粒催化剂或载体。 反应器主体被密封或封闭以与大气隔离。 还提出使用超级ALD循环的另一种方法来生长具有可控浓度的合金催化剂或载体。 通过本发明的方法和系统制备的催化剂是贵金属,例如铂,钯,铑,钌,铱和锇,或过渡金属如铁,银,钴,镍和锡,而载体是氧化硅 ,氧化铝,氧化锆,氧化铈或氧化镁,或可以是铬,钼,钨或钽的难熔金属。

    Environment Monitoring System and Vibration Sensing Device
    116.
    发明申请
    Environment Monitoring System and Vibration Sensing Device 审中-公开
    环境监测系统和振动传感装置

    公开(公告)号:US20160154128A1

    公开(公告)日:2016-06-02

    申请号:US14876812

    申请日:2015-10-06

    CPC classification number: G01V1/18 G01H1/00 G01V1/166

    Abstract: An environment monitoring system is utilized for monitoring an environmental variation status of a riverbed, a lake floor, or a seabed. The environment monitor system includes a wire drawing device configured at a monitoring point for releasing and tightening a transmission wire; a fixing pipe laid between the monitoring point and a structure layer for containing the transmission wire; a plurality of vibration sensing devices respectively configured on the transmission wire for converting sensed vibration energy to a plurality of electric signals and transmitting the plurality of electric signals by the transmission wire; an analyzing device coupled with the wire drawing device and the transmission wire for obtaining a released length of the transmission wire by the wire drawing device and determining the environmental variation status according to the released length and the plurality of electric signals to perform monitoring.

    Abstract translation: 利用环境监测系统监测河床,湖底或海底的环境变化状况。 环境监视器系统包括配置在用于释放和紧固传输线的监控点处的拉丝装置; 位于监测点和用于容纳传输线的结构层之间的固定管; 分别配置在所述传输线上的多个振动感测装置,用于将检测到的振动能量转换为多个电信号,并通过所述传输线传输所述多个电信号; 与拉丝装置和传输线耦合的分析装置,用于通过拉丝装置获得传输线的释放长度,并根据释放的长度和多个电信号确定环境变化状态以进行监视。

    Transistor device structure
    117.
    发明授权
    Transistor device structure 有权
    晶体管器件结构

    公开(公告)号:US09281305B1

    公开(公告)日:2016-03-08

    申请号:US14561377

    申请日:2014-12-05

    Abstract: A transistor device structure includes a substrate, a first transistor layer and a second transistor layer. The second transistor layer is disposed between the substrate and the first transistor layer. The first transistor layer includes an insulating structure and a first transistor unit. The insulating structure is disposed on the second transistor layer and has a protruding portion. The first transistor unit includes a gate structure, a source/drain structure, an embedded source/drain structure and a channel. The source/drain structure is disposed beside the gate structure and over the insulating structure. The embedded source/drain structure is disposed underneath the source/drain structure and in the insulating structure. The channel is defined between the protruding portion and the gate structure.

    Abstract translation: 晶体管器件结构包括衬底,第一晶体管层和第二晶体管层。 第二晶体管层设置在衬底和第一晶体管层之间。 第一晶体管层包括绝缘结构和第一晶体管单元。 绝缘结构设置在第二晶体管层上并具有突出部分。 第一晶体管单元包括栅极结构,源极/漏极结构,嵌入式源极/漏极结构和沟道。 源极/漏极结构设置在栅极结构旁边和绝缘结构之上。 嵌入式源极/漏极结构设置在源极/漏极结构下方和绝缘结构中。 通道限定在突出部分和栅极结构之间。

    Tip structure of platinum-platinum silicide-silicon composite field sensor probe and method for forming MSTA strucutre on the probe
    118.
    发明授权
    Tip structure of platinum-platinum silicide-silicon composite field sensor probe and method for forming MSTA strucutre on the probe 有权
    铂铂硅化硅 - 硅复合材料场传感器探头的尖端结构和探针上形成MSTA结构的方法

    公开(公告)号:US09255944B1

    公开(公告)日:2016-02-09

    申请号:US14665121

    申请日:2015-03-23

    CPC classification number: G01Q70/18 G01Q70/14

    Abstract: A platinum-platinum silicide modified silicon composite tip apex, and a method for forming the aforesaid tip apex are disclosed, where a metallic precursor solution and a silicon probe are reacted to form a local platinum nano-structure, which could be precisely controlled with local selectivity, and a local platinum silicide layer is formed between the platinum nano-structure and the silicon probe with an atmospheric microwave annealing (a-MWA) process conducted as well, largely enhancing the conductivity of the tip and spatial resolution of the field detection in field sensitive scanning probe microscopy. In addition to exemption from a stray-field effect and thus having better image quality, the platinum silicide-containing probe could more efficiently enhance the interfacial electron transfer efficiency as compared to the probe tip having only a platinum nano-structure, so that the probe could be applicable to a controlled conductive probe having high spatial resolution.

    Abstract translation: 公开了一种铂 - 铂硅化物改性硅复合顶尖,以及形成上述顶尖的方法,其中使金属前体溶液和硅探针反应形成局部铂纳米结构,其可以用局部 选择性,并且在铂纳米结构和硅探针之间形成局部铂硅化物层,同时进行大气微波退火(a-MWA)工艺,大大提高了尖端的导电性和场检测的空间分辨率 场敏感扫描探针显微镜。 与仅具有铂纳米结构的探针头相比,除了免除杂散场效应并且因此具有更好的图像质量之外,与仅具有铂纳米结构的探针头相比,含铂硅化物探针可以更有效地提高界面电子转移效率,使得探针 可以适用于具有高空间分辨率的受控导电探针。

    MEASURING TEHNOLOGY FOR OPTICAL ELEMENT FOR OBTAINING MEASUREMENT ERROR OPTICAL ELEMENT
    119.
    发明申请
    MEASURING TEHNOLOGY FOR OPTICAL ELEMENT FOR OBTAINING MEASUREMENT ERROR OPTICAL ELEMENT 审中-公开
    用于获取测量误差光学元件的光学元件的测量技术

    公开(公告)号:US20160003706A1

    公开(公告)日:2016-01-07

    申请号:US14322912

    申请日:2014-07-03

    CPC classification number: G01M11/0271 G01M11/005

    Abstract: A measuring method for an optical element for obtaining a plurality of measurement errors of the optical element is disclosed, which comprises steps of irradiating a laser ray to an overall portion of the optical element, wherein the optical element is supported as one of a horizontal state and a vertical state; rotating continuously the optical element with 360 degrees to reflect the laser ray to obtain a reflected light wavefront picture from the reflected laser ray; analyzing the reflected light wavefront picture to obtain a plurality of aberration characteristics information, respectively, each being one of a sine and a cosine wave functions of a wavefront error for each of the plurality of specified rotation angles; analyzing a plurality of interference factors each for the plurality of measurement errors on each of the plurality of aberration characteristics information, respectively; calculating and extracting a plurality of classified aberration characteristics information for each of the plurality of specified rotation angles of the optical element from each of the plurality of aberration characteristics information according to the plurality of measurement errors, respectively; and analyzing each of the plurality of classified aberration characteristics information to obtain an error amount corresponding to each of the plurality of measurement errors, respectively.

    Abstract translation: 公开了一种用于获得光学元件的多个测量误差的光学元件的测量方法,其包括以下步骤:将光线照射到光学元件的整个部分,其中光学元件被支撑为水平状态之一 和垂直状态; 以360度连续旋转光学元件以反射激光,从反射的激光射线获得反射光波前图像; 分析反射光波前图像以获得多个像差特性信息,每个像差特性信息分别是多个指定旋转角度中的每一个的波前误差的正弦波和余弦波函数之一; 分别在多个像差特性信息中的每一个上分析针对多个测量误差的多个干扰因子; 根据多个测量误差,分别从多个像差特性信息中的每一个分别计算和提取用于光学元件的多个指定旋转角度中的每一个的多个分类像差特性信息; 以及分析所述多个分类的像差特性信息中的每一个以分别获得与所述多个测量误差中的每一个对应的误差量。

    Spread spectrum clock generator and method for generating spread spectrum clock signal
    120.
    发明授权
    Spread spectrum clock generator and method for generating spread spectrum clock signal 有权
    扩频时钟发生器和产生扩频时钟信号的方法

    公开(公告)号:US09191128B2

    公开(公告)日:2015-11-17

    申请号:US14108769

    申请日:2013-12-17

    CPC classification number: H04B15/04 H03L7/197 H03L2207/06 H04L7/033 H04L7/043

    Abstract: A spread spectrum clock generator for generating a spread spectrum clock signal is provided. The spread spectrum clock generator includes a phase-locked loop system and a random walk modulator. The random walk modulator generates a modulating signal according to a random walk model. Then, the phase-locked loop system generates a clock signal with spread spectrum in response to the modulating signal. A method for generating the spread spectrum clock signal using the spread spectrum clock generator is also provided.

    Abstract translation: 提供了一种用于产生扩频时钟信号的扩频时钟发生器。 扩频时钟发生器包括锁相环系统和随机游走调制器。 随机游走调制器根据随机游走模型产生调制信号。 然后,锁相环系统响应于调制信号产生具有扩展频谱的时钟信号。 还提供了一种使用扩频时钟发生器产生扩频时钟信号的方法。

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