Abstract:
The present invention provides an operational-task-oriented system and method for dynamically adjusting operational environment applicable to a computer cluster. Each operational node of the computer cluster has two or more operational systems installed. After receiving the operational task, the control node estimates the time required for completing different tasks requiring different operational systems by appropriate operational nodes and compares the estimated finish time and the assigned finish time for judging how to adjust the operating system running in the operational nodes. Thereby, the operational task can be completed in the assigned finish time. Another method is to use the control node to analyze the proportions of the tasks requiring different operational systems in an operational task and hence adjusts the operational system running in an operational node according to the proportion of requirement. Thereby, the operational task can be completed in the shortest time.
Abstract:
An apparatus is provided for detecting transmittance of a trench. The trench is located on an infrared-transmittable material, which can be a wafer. The wafer is obtained after a ditching process. An image of the wafer is fetched. The contrast of the image is greatly enhanced. The contrast-enhanced image is used for automated analysis of the transmittance of the trench. Accuracy of detecting the transmittance is improved. Hence, the present invention uses a simple structure to detect transmittance defects of the trench for ensuring goodness of the wafer.
Abstract:
A transistor device structure includes a substrate, a first polycrystalline semiconductor thin film and a first transistor unit. The first polycrystalline semiconductor thin film is disposed on the substrate. A grain diameter of the first polycrystalline semiconductor thin film is greater than 1 micrometer and a thickness of the first polycrystalline semiconductor thin film is less than three hundredths of the grain diameter. The first transistor unit is disposed on the first polycrystalline semiconductor thin film and includes a first gate dielectric layer and a first gate structure. The first gate dielectric layer is disposed on a surface of the first polycrystalline thin film semiconductor. The first gate structure is disposed on a surface of the first gate dielectric layer.
Abstract:
A precast segment suitable for block-stacking concept is disclosed. The precast segment includes a first surface, an opposite second surface, plural through holes, and plural male-female connecting sets. The through holes extend from the first surface and toward the second surface to communicate between the first surface and the second surface. Each male-female connecting set includes a shear key and a joint hole, wherein the shear key protrudes from one of the first surface and the second surface to serve as a male connecting unit, and the joint hole is formed in the other of the first surface and the second surface to serve as a female connecting unit. Accordingly, the precast segments can be block-stacked by mortise-and-tenon joints to construct a bridge pier system. Compared to the conventional construction methodology, the present invention can enhance the efficiency of segment fabrication and avoid high prestress force.
Abstract:
The present invention provides methods and designs of enclosed-channel reactor system for manufacturing catalysts or supports. Both of the configuration designs force the gaseous precursors and purge gas flow through the channel surface of reactor. The precursors will transform to thin film or particle catalysts or supports under adequate reaction temperature, working pressure and gas concentration. The reactor body is either sealed or enclosed for isolation from atmosphere. Another method using super ALD cycles is also proposed to grow alloy catalysts or supports with controllable concentration. The catalysts prepared by the method and system in the present invention are noble metals, such as platinum, palladium, rhodium, ruthenium, iridium and osmium, or transition metals such as iron, silver, cobalt, nickel and tin, while supports are silicon oxide, aluminum oxide, zirconium oxide, cerium oxide or magnesium oxide, or refractory metals, which can be chromium, molybdenum, tungsten or tantalum.
Abstract:
An environment monitoring system is utilized for monitoring an environmental variation status of a riverbed, a lake floor, or a seabed. The environment monitor system includes a wire drawing device configured at a monitoring point for releasing and tightening a transmission wire; a fixing pipe laid between the monitoring point and a structure layer for containing the transmission wire; a plurality of vibration sensing devices respectively configured on the transmission wire for converting sensed vibration energy to a plurality of electric signals and transmitting the plurality of electric signals by the transmission wire; an analyzing device coupled with the wire drawing device and the transmission wire for obtaining a released length of the transmission wire by the wire drawing device and determining the environmental variation status according to the released length and the plurality of electric signals to perform monitoring.
Abstract:
A transistor device structure includes a substrate, a first transistor layer and a second transistor layer. The second transistor layer is disposed between the substrate and the first transistor layer. The first transistor layer includes an insulating structure and a first transistor unit. The insulating structure is disposed on the second transistor layer and has a protruding portion. The first transistor unit includes a gate structure, a source/drain structure, an embedded source/drain structure and a channel. The source/drain structure is disposed beside the gate structure and over the insulating structure. The embedded source/drain structure is disposed underneath the source/drain structure and in the insulating structure. The channel is defined between the protruding portion and the gate structure.
Abstract:
A platinum-platinum silicide modified silicon composite tip apex, and a method for forming the aforesaid tip apex are disclosed, where a metallic precursor solution and a silicon probe are reacted to form a local platinum nano-structure, which could be precisely controlled with local selectivity, and a local platinum silicide layer is formed between the platinum nano-structure and the silicon probe with an atmospheric microwave annealing (a-MWA) process conducted as well, largely enhancing the conductivity of the tip and spatial resolution of the field detection in field sensitive scanning probe microscopy. In addition to exemption from a stray-field effect and thus having better image quality, the platinum silicide-containing probe could more efficiently enhance the interfacial electron transfer efficiency as compared to the probe tip having only a platinum nano-structure, so that the probe could be applicable to a controlled conductive probe having high spatial resolution.
Abstract:
A measuring method for an optical element for obtaining a plurality of measurement errors of the optical element is disclosed, which comprises steps of irradiating a laser ray to an overall portion of the optical element, wherein the optical element is supported as one of a horizontal state and a vertical state; rotating continuously the optical element with 360 degrees to reflect the laser ray to obtain a reflected light wavefront picture from the reflected laser ray; analyzing the reflected light wavefront picture to obtain a plurality of aberration characteristics information, respectively, each being one of a sine and a cosine wave functions of a wavefront error for each of the plurality of specified rotation angles; analyzing a plurality of interference factors each for the plurality of measurement errors on each of the plurality of aberration characteristics information, respectively; calculating and extracting a plurality of classified aberration characteristics information for each of the plurality of specified rotation angles of the optical element from each of the plurality of aberration characteristics information according to the plurality of measurement errors, respectively; and analyzing each of the plurality of classified aberration characteristics information to obtain an error amount corresponding to each of the plurality of measurement errors, respectively.
Abstract:
A spread spectrum clock generator for generating a spread spectrum clock signal is provided. The spread spectrum clock generator includes a phase-locked loop system and a random walk modulator. The random walk modulator generates a modulating signal according to a random walk model. Then, the phase-locked loop system generates a clock signal with spread spectrum in response to the modulating signal. A method for generating the spread spectrum clock signal using the spread spectrum clock generator is also provided.