公开(公告)号：US09905547B2

公开(公告)日：2018-02-27

申请号：US14883227

申请日：2015-10-14

Applicant: National Applied Research Laboratories

Inventor： Chang-Hong Shen ,  Jia-Min Shieh ,  Wen-Hsien Huang ,  Tsung-Ta Wu ,  Chih-Chao Yang ,  Tung-Ying Hsieh

IPC: H01L31/062 ,  H01L25/16 ,  H01L23/58 ,  H01L31/028 ,  H01L31/075

CPC classification number: H01L25/167 ,  H01L23/58 ,  H01L31/028 ,  H01L31/075 ,  Y02E10/547 ,  Y02E10/548

Abstract: A chipset with light energy harvester, includes a substrate, a functional element layer, and a light energy harvesting layer, both are stacked vertically on the substrate, and an interconnects connected between the functional element layer and the light energy harvesting layer.

公开(公告)号：US09455350B2

公开(公告)日：2016-09-27

申请号：US14224503

申请日：2014-03-25

Applicant: National Applied Research Laboratories

Inventor： Jia-Min Shieh ,  Wen-Hsien Huang ,  Chang-Hong Shen ,  Chih-Chao Yang ,  Tung-Ying Hsieh

IPC: H01L29/786 ,  H01L27/088 ,  H01L29/04 ,  H01L27/12 ,  H01L21/822 ,  H01L27/06

CPC classification number: H01L29/78678 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/1203 ,  H01L27/1222 ,  H01L29/04 ,  H01L29/78603 ,  H01L29/78675

Abstract: A transistor device structure includes a substrate, a first polycrystalline semiconductor thin film and a first transistor unit. The first polycrystalline semiconductor thin film is disposed on the substrate. A grain diameter of the first polycrystalline semiconductor thin film is greater than 1 micrometer and a thickness of the first polycrystalline semiconductor thin film is less than three hundredths of the grain diameter. The first transistor unit is disposed on the first polycrystalline semiconductor thin film and includes a first gate dielectric layer and a first gate structure. The first gate dielectric layer is disposed on a surface of the first polycrystalline thin film semiconductor. The first gate structure is disposed on a surface of the first gate dielectric layer.

Abstract translation: 晶体管器件结构包括衬底，第一多晶半导体薄膜和第一晶体管单元。 第一多晶半导体薄膜设置在基板上。 第一多晶半导体薄膜的晶粒直径大于1微米，第一多晶半导体薄膜的厚度小于晶粒直径的百分之三十。 第一晶体管单元设置在第一多晶半导体薄膜上，并且包括第一栅极介电层和第一栅极结构。 第一栅介质层设置在第一多晶薄膜半导体的表面上。 第一栅极结构设置在第一栅极介电层的表面上。

公开(公告)号：US09281305B1

公开(公告)日：2016-03-08

申请号：US14561377

申请日：2014-12-05

Applicant: National Applied Research Laboratories

Inventor： Chih-Chao Yang ,  Jia-Min Shieh ,  Wen-Hsien Huang ,  Tung-Ying Hsieh ,  Chang-Hong Shen ,  Szu-Hung Chen

IPC: H01L27/06 ,  H01L27/12 ,  H01L29/16 ,  H01L29/04 ,  H01L29/08 ,  H01L29/24 ,  H01L29/786 ,  H01L29/417 ,  H01L21/8238

CPC classification number: H01L27/0688 ,  H01L21/823814 ,  H01L27/1203 ,  H01L29/04 ,  H01L29/0847 ,  H01L29/1606 ,  H01L29/24 ,  H01L29/41783 ,  H01L29/78648 ,  H01L29/78684 ,  H01L29/78696

Abstract: A transistor device structure includes a substrate, a first transistor layer and a second transistor layer. The second transistor layer is disposed between the substrate and the first transistor layer. The first transistor layer includes an insulating structure and a first transistor unit. The insulating structure is disposed on the second transistor layer and has a protruding portion. The first transistor unit includes a gate structure, a source/drain structure, an embedded source/drain structure and a channel. The source/drain structure is disposed beside the gate structure and over the insulating structure. The embedded source/drain structure is disposed underneath the source/drain structure and in the insulating structure. The channel is defined between the protruding portion and the gate structure.

Abstract translation: 晶体管器件结构包括衬底，第一晶体管层和第二晶体管层。 第二晶体管层设置在衬底和第一晶体管层之间。 第一晶体管层包括绝缘结构和第一晶体管单元。 绝缘结构设置在第二晶体管层上并具有突出部分。 第一晶体管单元包括栅极结构，源极/漏极结构，嵌入式源极/漏极结构和沟道。 源极/漏极结构设置在栅极结构旁边和绝缘结构之上。 嵌入式源极/漏极结构设置在源极/漏极结构下方和绝缘结构中。 通道限定在突出部分和栅极结构之间。