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312 条记录 (耗时 0.016 秒)

    Nanowires
    92.
    发明申请
    Nanowires 审中-公开
    纳米线

    公开(公告)号：US20040144970A1

    公开(公告)日：2004-07-29

    申请号：US10680571

    申请日：2003-10-07

    发明人： Dunwei Wang ,  Hongjie Dai

    IPC分类号： H01L029/06

    CPC分类号： C30B25/00 ,  B82Y10/00 ,  C30B29/08 ,  C30B29/605 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/06 ,  H01L29/125

    摘要： Nanowires are formed using an approach that facilitates efficient and economical growth thereof. According to an example embodiment of the present invention, a gas including a semiconducting material (e.g., single-crystal germanium) is introduced to a conductive metal particle (e.g., gold) on an insulating substrate to grow a nanowire therefrom. In one implementation, an alloy is formed from the semiconducting material and the conductive metal particle, with the nanowire being grown from the alloy. In another implementation, a co-flow of hydrogen is used with the gas including the semiconducting material to facilitate the growth of the nanowire.

    摘要翻译： 使用促进其有效和经济生长的方法形成纳米线。 根据本发明的示例性实施例，将包含半导体材料（例如单晶锗）的气体引入绝缘基板上的导电金属颗粒（例如，金），以从其生长纳米线。 在一个实施方案中，由半导体材料和导电金属颗粒形成合金，其中纳米线从合金生长。 在另一个实施方案中，氢气的共流与包括半导体材料的气体一起使用以促进纳米线的生长。

    Surfactant-enhanced epitaxy
    95.
    发明授权
    Surfactant-enhanced epitaxy 失效
    表面活性剂增强外延

    公开(公告)号：US5316615A

    公开(公告)日：1994-05-31

    申请号：US28644

    申请日：1993-03-09

    申请人： Matthew W. Copel ,  Rudolf M. Tromp

    发明人： Matthew W. Copel ,  Rudolf M. Tromp

    IPC分类号： C30B23/02 ,  C30B25/02 ,  C30B25/18

    CPC分类号： C30B29/06 ,  C30B23/02 ,  C30B25/02 ,  C30B25/18 ,  C30B29/08 ,  C30B29/52

    摘要： The present invention broadly concerns layered structures of substantially-crystalline materials and processes for making such structures. More particularly, the invention concerns epitaxial growth of a substantially-crystalline layer of a first material on a substantially-crystalline second material different from the first material.

    摘要翻译： 本发明广泛涉及基本结晶材料的层状结构和制造这种结构的方法。 更具体地，本发明涉及在与第一材料不同的基本上为结晶的第二材料上的第一材料的基本晶体层的外延生长。

    Process and apparatus for pulling single crystals of germanium
    98.
    发明授权
    Process and apparatus for pulling single crystals of germanium 失效
    用于拉拔单晶单晶的方法和装置

    公开(公告)号：US3637439A

    公开(公告)日：1972-01-25

    申请号：US3637439D

    申请日：1969-07-02

    申请人： METALLURGIE HOBOKEN

    发明人： DEBIE EDOUARD

    IPC分类号： C22B41/00 ,  C30B15/00 ,  C30B15/12 ,  B01J17/00 ,  H01L7/00

    CPC分类号： C30B15/12 ,  C22B41/00 ,  C30B15/00 ,  C30B29/08 ,  Y10T117/1052

    摘要： A process and apparatus for separating scum from molten metal, particularly germanium, and the pulling of single crystals with the use of outer and inner crucibles. The metal is placed in the outer crucible and there melted. In the inner crucible is weighted with a ballast to ensure its penetration into the molten metal and to avoid its flotation on the molten metal. The outer crucible is then lifted and rotated to segregate the scum from the molten metal and to introduce the metal from the outer to the inner crucible through an orifice provided in the bottom of the inner crucible while the scum remains in the outer crucible. The outer crucible is then lowered to empty the inner crucible and again lifted and rotated to reintroduce scum-free metal from the outer to the inner crucible. The steps are repeated until all traces of the scum are separated from the molten metal, which is followed by growing a single crystal of metal from the scum-free metal in the inner crucible.

    摘要翻译： 用于将浮渣与熔融金属，特别是锗分离的方法和装置，以及使用外坩埚和内坩埚拉制单晶。 金属被放置在外坩埚中，熔化。 在内坩埚中用压载物加重，以确保其进入熔融金属并避免其在熔融金属上的浮选。 然后将外坩埚提起并旋转以将浮渣与熔融金属隔离，并将金属从外坩埚引导通过设置在内坩埚底部的孔口，同时将浮渣留在外坩埚中。 然后将外坩埚放下以使内坩埚清空并再次提起并旋转，以从外部至内坩埚再次引入浮渣金属。 重复这些步骤，直到浮渣的所有痕迹与熔融金属分离，然后从内坩埚中的无浮渣金属生长单晶金属。

    Method for probucmg homogeneously boped monocrystalline bodies of ele- mental semiconductors
    100.
    发明授权
    Method for probucmg homogeneously boped monocrystalline bodies of ele- mental semiconductors 失效

    公开(公告)号：US3172857A

    公开(公告)日：1965-03-09

    申请号：US3172857D

    IPC分类号： C23C16/00 ,  C30B25/02 ,  H01L21/205

    CPC分类号： C30B29/06 ,  C23C16/00 ,  C30B25/02 ,  C30B29/08 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02598 ,  H01L21/0262 ,  Y10S118/90 ,  Y10S252/951

    摘要： A homogeneously doped silicon is produced by mixing in the liquid phase a halogen compound of silicon consisting of a silicon halide or or halosilane with a halide of a doping element of Group III or V of the Periodic System having a boiling point differing by not more than 50 DEG C. from that of the silicon halogen compound, evaporating the liquids by passing a carrier gas through them at such a rate that the ratio of silicon to doping element in the residual liquid remains constant and passing the gas mixture over the surface of a carrier of silicon heated to a temperature such that silicon and the doping element are deposited from the gas on to the surface of the carrier. The carrier may be silicon doped with the doping element and the ratio of silicon halogen compound to the doping element halide in the liquid is so adjusted, by determinations of the extent of doping of deposited silicon obtained with liquid mixtures of known concentrations, that the extent of doping of the deposited silicon e.g. as a monocrystal is the same as that of the carrier e.g. a monocrystal. The carrier gas may be hydrogen. The gaseous mixture e.g. SiCl4 or SiHCl3 may contain a hydrogen halide, e.g. HCl. The doping substance may be PCl3, POCl3, AsCl3 or BBr3. Specifications 795,191, 809,250, 812,818, 926,807 and 960,893 are referred to.ALSO:A homogeneously doped germanium or silicon is produced by mixing in the liquid phase a halogen compound of germanium or silicon consisting of a germanium halide or halogermane or a silicon halide or halosilicone with a halide of a doping element of Group III or V of the Periodic System having a boiling point differing by not more than 50 DEG C. from that of the germanium halogen compound, evaporating the liquids by passing a carrier gas through them at such a rate that the ratio of germanium to doping element in the residual liquid remains constant and passing the gas mixture over the surface of a carrier of germanium heated to a temperature such that germanium and the doping element are deposited from the gas on to the surface of the carrier. The carrier may be germanium doped with the doping element and the ratio of germanium halogen compound to the doping element halide in the liquid is so adjusted, by determinations of the extent of doping of deposited germanium obtained with liquid mixtures of known concentration, that the extent of doping of the deposited germanium e.g. as a monocrystal is the same as that of the carrier e.g. a monocrystal. The carrier gas may be hydrogen. The gaseous mixture e.g. GeCl4 or GeHCl3 may contain a hydrogen halide e.g. HCl. The doping substance may be PCl3, POCl3, AsCl3 or BBr3. Specifications 795,191, 809,250, 812,818, 926,807 and 960,893 are referred to.