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    Method for enhancing efficiency of recovery of semi-conductor material in perturbable disproportionation systems
    1.
    发明授权
    Method for enhancing efficiency of recovery of semi-conductor material in perturbable disproportionation systems 失效
    在扰动歧化系统中提高半导体材料回收效率的方法

    公开(公告)号：US3354004A

    公开(公告)日：1967-11-21

    申请号：US41188164

    申请日：1964-11-17

    申请人： IBM

    发明人： ARNOLD REISMAN ,  MELVIN BERKENBLIT ,  ALYANAKYAN SATENIK A

    IPC分类号： C22B41/00 ,  C23C16/14 ,  C30B25/02

    CPC分类号： C23C16/14 ,  C22B41/00 ,  C30B25/02 ,  C30B29/08 ,  Y10S118/90

    摘要： Semi-conductor material, particularly Ge, is epitaxially deposited on a substrate by reacting the material with a hydrogen-inert gas-halide mixture to produce compounds thereof in the vapour phase and perturbing the equilibrium of this vapour phase by introducing a perturbing gas, such as hydrogen or a mixture of hydrogen and an inert gas, to produce the required deposition. As shown, Ge source material is packed within a tube 11 placed in a furnace 14 kept at 500-900 DEG C. (preferably 600 DEG C.). A mixture of HI and He is passed through the tube 11 to produce a vaporous mixture containing GeI2 which passes out through a nozzle 16 into a deposition chamber 17 held at 350 DEG C. H2, with or without He, is passed into the deposition chamber through a coaxial nozzle 18 to perturb the equilibrium and cause epitaxial deposition on a Ge substrate in a quartz boat 26.