公开(公告)号：US5718761A

公开(公告)日：1998-02-17

申请号：US635214

申请日：1996-04-17

Applicant: Hiroyuki Tokunaga ,  Jun-ichi Hanna ,  Isamu Shimizu

Inventor： Hiroyuki Tokunaga ,  Jun-ichi Hanna ,  Isamu Shimizu

IPC: C30B25/02 ,  C30B25/18 ,  H01L21/36 ,  H01L21/365 ,  C03B25/04

CPC classification number: C30B25/02 ,  C30B25/18 ,  C30B29/48 ,  H01L21/02422 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  Y10S117/913

Abstract: A method of forming a crystalline compound semiconductor film comprises introducing into a crystal forming space housing a substrate on which a non-nucleation surface (S.sub.NDS) having a smaller nucleation density and a nucleation surface (S.sub.NDL) having a fine surface area sufficient for crystal growth only from a single nucleus and having a larger nucleation density (ND.sub.L) than the nucleation density (NDs) of the non-nucleation surface (S.sub.NDS) are arranged adjacent to each other an organometallic compound (VI) for supplying an element belonging to the group VI of Periodic Table represented by the general formula R.sub.1 --X.sub.n --R.sub.2 wherein n is an integer of 2 or more; R.sub.1 and R.sub.2 each represent alkyl; and X is S, Se or Te and a compound (II) for supplying an element belonging to the group II of Periodic Table in gas phase and applying crystal growth treatment according to the vapor phase method to the substrate to selectively form a crystalline group II-VI compound semiconductor film on the substrate.

Abstract translation: 形成结晶化合物半导体膜的方法包括引入晶体形成空间，该晶体形成空间容纳其中具有较小成核密度的非成核表面（SNDS）和具有足够晶体生长的微细表面积的成核表面（SNDL）的基底 只有来自单个核并且具有比非成核表面（SNDS）的成核密度（NDs）更大的成核密度（NDL）的相对于彼此相邻的用于提供属于该组的元素的有机金属化合物（VI） VI为通式R 1 -Xn-R 2表示的周期表，其中n为2以上的整数; R1和R2各自表示烷基; X是S，Se或Te，以及用于在气相中提供属于元素周期表II族的元素的化合物（II），并将根据气相法的晶体生长处理施加到基板上以选择性地形成晶体组II -VI化合物半导体膜。

公开(公告)号：US5246886A

公开(公告)日：1993-09-21

申请号：US903939

申请日：1992-06-26

Applicant: Akira Sakai ,  Shunichi Ishihara ,  Isamu Shimizu

Inventor： Akira Sakai ,  Shunichi Ishihara ,  Isamu Shimizu

IPC: H01L21/20 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/336 ,  H01L29/786 ,  H01L31/18

CPC classification number: H01L31/1812 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/3065 ,  Y02E10/50

Abstract: A process for forming a silicon-containing polycrystalline film on a substrate by a chemical vapor deposition method, said process comprises the steps of:(a) forming a thin film comprising silicon and germanium atoms on said substrate,(b) subjecting said thin film to etching treatment so that a crystalline nucleus comprising germanium atoms as the main constituent remains on the surface of said substrate, and(c) growing said crystalline nucleus to thereby form a silicon-containing polycrystalline film on said substrate.

Abstract translation: 一种通过化学气相沉积法在衬底上形成含硅多晶膜的方法，所述方法包括以下步骤：（a）在所述衬底上形成包含硅和锗原子的薄膜，（b）使所述薄膜 以使得以锗原子为主要成分的晶核保留在所述基板的表面上，（c）生长所述晶核，从而在所述基板上形成含硅多晶膜。

公开(公告)号：US5160543A

公开(公告)日：1992-11-03

申请号：US837601

申请日：1992-02-21

Applicant: Shunichi Ishihara ,  Masaaki Hirooka ,  Jun-Ichi Hanna ,  Isamu Shimizu

Inventor： Shunichi Ishihara ,  Masaaki Hirooka ,  Jun-Ichi Hanna ,  Isamu Shimizu

IPC: C23C16/452 ,  C23C16/455 ,  G03G5/082 ,  H01L21/205 ,  H01L31/20

CPC classification number: C23C16/45561 ,  C23C16/452 ,  C23C16/455 ,  G03G5/08278 ,  H01L21/0237 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/50 ,  Y02P70/521

Abstract: There is disclosed a device for forming a deposited film on a substrate through utilization of chemical reaction between a gaseous starting material for a film to be formed and a gaseous halogenic oxidizing agent which has one or more gas introducing means having a multi-tubular structure with a converted tip end or having a meeting space for both the gases.

Abstract translation: 公开了一种用于通过利用待形成的膜的气态原料与气态卤素氧化剂之间的化学反应在基板上形成沉积膜的装置，所述气态卤化氧化剂具有一个或多个具有多管状结构的气体引入装置， 转换的尖端或两个气体具有会议空间。

公开(公告)号：US4946514A

公开(公告)日：1990-08-07

申请号：US173579

申请日：1988-03-25

Applicant: Katsumi Nakagawa ,  Isamu Shimizu

Inventor： Katsumi Nakagawa ,  Isamu Shimizu

IPC: H01L31/0392 ,  H01L31/07 ,  H01L31/075 ,  H01L31/20

CPC classification number: H01L31/03921 ,  H01L31/07 ,  H01L31/075 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

Abstract: Improved pin type and Schottky time thin film photoelectromotive force elements which exhibit desired effects in short-circuit current (Isc), open-circuit voltage (Voc), fill factor (F.F.), photoelectric conversion efficiency and S/N ratio, characterized in that at least one of the n-type semiconductor layer and the p-type semiconductor layer is constituted with a non-single-crystal silicon semiconductor layer comprised of a plurality of stacked non-single-crystal silicon films of 100 .ANG. or less thickness containing 1 to 10 atomic % of hydrogen atoms.

Abstract translation: 在短路电流（Isc），开路电压（Voc），填充因子（FF），光电转换效率和S / N比中表现出期望的效果的改进的引脚类型和肖特基时间薄膜光电动势元件，其特征在于 n型半导体层和p型半导体层中的至少一个由非单晶硅半导体层构成，所述非单晶硅半导体层由多个层叠的非单晶硅膜组成，所述非单晶硅膜的厚度为100或更小， 至10原子％的氢原子。

公开(公告)号：US4931308A

公开(公告)日：1990-06-05

申请号：US33190

申请日：1987-04-02

Applicant: Isamu Shimizu ,  Masahiro Fushimi

Inventor： Isamu Shimizu ,  Masahiro Fushimi

IPC: C23C16/40 ,  C23C16/505 ,  G02F1/1343 ,  H01L31/18

CPC classification number: C23C16/505 ,  C23C16/407 ,  G02F1/13439 ,  H01L31/1884 ,  Y02E10/50

Abstract: Process for preparing a functional tin oxide thin film by reducing a raw material gas capable of contributing to formation of the tin oxide thin film either with the action of an excitation energy source such as high frequency, direct-current, microwave or light, or both with the action of such excitation energy source and the action of a reducing gas under reduced atmospheric inner pressure condition in a substantially enclosed reaction chamber containing the substrate upon which the tin oxide thin film is to be deposited, and oxidizing the resultant reduced active species with on oxidizing gas to thereby deposit the tin oxide thin film on the substrate at a low temperature and at high deposition rates without any significant powder.

Abstract translation: 通过利用诸如高频，直流，微波或光的激发能源的作用或两者来减少能够有助于形成氧化锡薄膜的原料气体来制备功能性氧化锡薄膜的方法 在这种激发能源的作用下，还原气体在降低的大气内压条件下，在含有氧化锡薄膜的基底上的基本上封闭的反应室中沉积，并将所得还原的活性物质用 在氧化气体上，从而在低温和高沉积速率下将氧化锡薄膜沉积在基板上而没有任何显着的粉末。

公开(公告)号：US4849249A

公开(公告)日：1989-07-18

申请号：US186770

申请日：1988-04-25

Applicant: Shunichi Ishihara ,  Yoshiyuki Osada ,  Shunri Oda ,  Isamu Shimizu

Inventor： Shunichi Ishihara ,  Yoshiyuki Osada ,  Shunri Oda ,  Isamu Shimizu

IPC: H01L31/04 ,  C23C16/22 ,  C23C16/452 ,  H01L21/205

CPC classification number: C23C16/452 ,  C23C16/22

Abstract: A process for forming a deposited film according to chemical vapor deposition on a substrate comprises the first step of forming an amorphous film by reacting an excited species (AY) containing an atom (A) which becomes the constituent constituting said deposited film and an atom (Y) with high electronegativity with an active species (Z) which is chemically reactive with said excited species (AY) at a first ratio and the second step of forming a polycrystalline film by reacting said excited species (AY) with said active species (Z) at a second ratio which is different from said first ratio.

Abstract translation: 根据化学气相沉积在基板上形成沉积膜的方法包括通过使含有成为构成所述沉积膜的成分的原子（A）的激发物质（AY）与原子（AY）反应形成非晶膜的第一步骤 Y）与具有与所述激发的物质（AY）以第一比例化学反应的活性物质（Z）具有高电负性，第二步通过使所述激发的物质（AY）与所述活性物质（Z）反应形成多晶膜 ）以与所述第一比率不同的第二比率。

公开(公告)号：US4842897A

公开(公告)日：1989-06-27

申请号：US947036

申请日：1986-12-29

Applicant: Eiji Takeuchi ,  Jun-Ichi Hanna ,  Isamu Shimizu ,  Masaaki Hirooka ,  Akira Sakai ,  Masao Ueki

Inventor： Eiji Takeuchi ,  Jun-Ichi Hanna ,  Isamu Shimizu ,  Masaaki Hirooka ,  Akira Sakai ,  Masao Ueki

IPC: C23C16/452 ,  H01L21/205

CPC classification number: H01L21/02505 ,  C23C16/452 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

Abstract: A method for forming deposited film by introducing into a reaction space a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting material to effect chemical contact therebetween to thereby form a plural number of precursors including precursors under excited state, and forming said deposited film on a substrate previously position in a film forming space spatially communicated with said reaction space with the use of at least one precursor of these precursors as the feeding source for the constituent element of said deposited film, said method comprising the step of increasing the proportion of the amount of said gaseous starting material introduced relative to the amount of said gaseous halogenic oxidizing agent introduced in said reaction space.

Abstract translation: 一种通过向反应空间中引入用于形成沉积膜的气态原料和具有用于所述起始材料的氧化作用的特性的气态卤素氧化剂以在其间进行化学接触从而形成多个 前体，其包括在激发态的前体，并且在预先位于成膜空间中的基底上形成所述沉积膜，所述膜形成空间与所述反应空间空间连通，使用这些前体的至少一种前体作为所述沉积的构成元素的进料源 所述方法包括增加相对于引入所述反应空间的所述气态卤素氧化剂的量引入的所述气态原料的量的比例的步骤。

公开(公告)号：US4835005A

公开(公告)日：1989-05-30

申请号：US161386

申请日：1988-02-22

Applicant: Masaaki Hirooka ,  Kyosuke Ogawa ,  Shunichi Ishihara ,  Isamu Shimizu

Inventor： Masaaki Hirooka ,  Kyosuke Ogawa ,  Shunichi Ishihara ,  Isamu Shimizu

IPC: C23C16/24 ,  C23C16/448 ,  C23C16/452 ,  G03G5/082 ,  H01L21/205 ,  H01L31/20

CPC classification number: H01L21/0245 ,  C23C16/24 ,  C23C16/448 ,  C23C16/452 ,  G03G5/08278 ,  H01L21/02425 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

Abstract: A process for forming a deposition film on a substrate comprises introducing separately a precursor or activated species formed in a decomposition space (B) and activated species formed in a decomposition space (C), into the deposition space wherein the film is formed on the substrate.

Abstract translation: 用于在基板上形成沉积膜的方法包括将分解空间（B）中形成的前体或活化物质和形成在分解空间（C）中的活化物质分别引入沉积空间中，其中膜形成在基底上 。

公开(公告)号：US4812331A

公开(公告)日：1989-03-14

申请号：US942210

申请日：1986-12-16

Applicant: Masaaki Hirooka ,  Masao Ueki ,  Jun-Ichi Hanna ,  Isamu Shimizu

Inventor： Masaaki Hirooka ,  Masao Ueki ,  Jun-Ichi Hanna ,  Isamu Shimizu

IPC: H01L31/04 ,  C23C16/30 ,  C23C16/44 ,  C23C16/452 ,  H01L21/205 ,  H01L31/18 ,  C23C16/00

CPC classification number: H01L21/02546 ,  C23C16/301 ,  H01L21/0242 ,  H01L21/02543 ,  H01L21/02549 ,  H01L21/0262 ,  H01L31/184 ,  Y02E10/544

Abstract: A method for forming a deposited film, which comprises introducing gaseous starting materials, containing group III and/or group V compound as the constituent element for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action on said starting materials into a reaction space to effect contact therebetween to thereby form a plural number of precursors containing precursors under excited state, and forming a deposited film of a substrate existing in a film-forming space with the use of at least one precursor of said precursors as the feeding source for the constituent element of the deposited film.

Abstract translation: 一种形成沉积膜的方法，包括引入含有III族和/或V族化合物的气态原料作为形成沉积膜的构成元素和具有氧化作用的气态卤化氧化剂在所述原料上 进入反应空间以实现它们之间的接触，从而在激发状态下形成含有前体的多个前体，并且使用至少一种所述前体的前体形成存在于成膜空间中的基板的沉积膜作为 为沉积薄膜的组成元素提供源。

公开(公告)号：US4812328A

公开(公告)日：1989-03-14

申请号：US945689

申请日：1986-12-23

Applicant: Keishi Saitoh ,  Masaaki Hirooka ,  Junichi Hanna ,  Isamu Shimizu

Inventor： Keishi Saitoh ,  Masaaki Hirooka ,  Junichi Hanna ,  Isamu Shimizu

IPC: H01L31/04 ,  C23C16/24 ,  C23C16/30 ,  C23C16/44 ,  C23C16/452 ,  C23C16/48 ,  G03G5/08 ,  H01L21/205 ,  B05D5/12

CPC classification number: H01L21/02425 ,  C23C16/452 ,  H01L21/02422 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262

Abstract: A method for forming a deposited film by introducing a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action on said starting material separately from each other into a reaction space to form a deposited film according to a chemical reaction, which comprises activating previously a gaseous substance (B) for formation of a band gap controller in an activation space to form an activated species and introducing said activated species into the reaction space to form a deposited film controlled in band gap on a substrate existing in the film forming space.

Abstract translation: 通过将用于形成沉积膜的气态原料和对所述原料具有氧化作用的气态卤素氧化剂彼此分开引入反应空间形成沉积膜形成沉积膜的方法，以形成沉积膜 化学反应，其包括先前激活用于在活化空间中形成带隙控制器的气态物质（B）以形成活化物质并将所述活化物质引入反应空间中以形成控制在带隙控制器上的沉积膜 存在于成膜空间中的基板。