公开(公告)号：US20190252373A1

公开(公告)日：2019-08-15

申请号：US15990880

申请日：2018-05-29

申请人： TEXAS INSTRUMENTS INCORPORATED

发明人： Pranav KUMAR ,  Yogesh DARWHEKAR

IPC分类号： H01L27/06 ,  H01L29/73 ,  H03K19/018

CPC分类号： H01L27/0647 ,  H01L29/7302 ,  H03K19/01825 ,  H03K19/01837

摘要： A circuit includes a first bipolar junction transistor (BJT) including a first base, a first collector, and a first emitter, the first collector connected to a first supply voltage node and a second BJT including a second base, a second collector, and a second emitter, the second collector connected to the first emitter at an output node. The circuit also includes a capacitor including a first capacitor terminal and a second capacitor terminal, the first capacitor terminal connected to the second emitter of the second BJT and the second capacitor terminal connected to a second supply voltage node. A current source device is also included that is connected in parallel with the capacitor.

公开(公告)号：US20180175142A1

公开(公告)日：2018-06-21

申请号：US15896847

申请日：2018-02-14

申请人： Mitsubishi Electric Corporation

发明人： Shinya SONEDA

IPC分类号： H01L29/06 ,  H01L27/06 ,  H01L29/739 ,  H01L21/263

CPC分类号： H01L29/0626 ,  H01L21/263 ,  H01L27/0629 ,  H01L27/0647 ,  H01L27/0727 ,  H01L29/7396

摘要： An RC-IGBT according to the invention includes a high electric field cell formed in a region surrounded by an IGBT cell or in a region surrounded by a diode cell, and an n+ diffusion layer formed at a position opposed to the high electric field cell, the position being on a second main surface of an n− type drift layer. The high electric field cell has a higher maximum electric field intensity generated when a voltage is applied between main terminals than maximum electric field intensities of the IGBT cell, the diode cell, and a withstand voltage holding structure. Additionally, a p+ type collector layer and the high electric field cell fail to overlap with each other in a direction vertical to a first main surface of the n− type drift layer in a plane view.

公开(公告)号：US20180152113A1

公开(公告)日：2018-05-31

申请号：US15361898

申请日：2016-11-28

申请人： FORD GLOBAL TECHNOLOGIES, LLC

发明人： ZHUXIAN XU ,  CHINGCHI CHEN ,  MICHAEL W. DEGNER

IPC分类号： H02M7/00 ,  H01L27/02 ,  H01L27/06 ,  H01L23/495 ,  H01L23/31 ,  H02M7/537

CPC分类号： H02M7/003 ,  H01L23/3107 ,  H01L23/49503 ,  H01L23/49531 ,  H01L23/49537 ,  H01L23/49562 ,  H01L23/49575 ,  H01L27/0207 ,  H01L27/0647 ,  H01L2224/05554 ,  H01L2224/32245 ,  H01L2224/48247 ,  H01L2224/73265 ,  H02M7/537 ,  H01L2924/00

摘要： A selectable increase in the common source inductance is obtained by a layout for a power module used for a half-bridge phase leg in an inverter for an electrically-driven vehicle. The power module comprises a pair of transistor dies connected to positive, negative, and AC conductive tracks for carrying bridge currents. The module includes a pair of gate drive pins and a pair of gate drive coils connecting a respective pin and die. The gate drive coils are disposed in a region between the positive and negative tracks containing a flux generated by the currents having a locally greatest rate of change. The coils may preferably be comprised of traces on an auxiliary printed circuit board incorporated in the module. The gate drive pins can be on the gate side or the emitter side of the transistor dies.

公开(公告)号：US09831233B2

公开(公告)日：2017-11-28

申请号：US15142453

申请日：2016-04-29

申请人： Analog Devices Global

发明人： Javier Alejandro Salcedo ,  David J. Clarke

IPC分类号： H01L21/02 ,  H01L27/02 ,  H01L29/06 ,  H01L23/528 ,  H01L23/552 ,  H01L23/522 ,  H01L23/532 ,  H01L29/73 ,  H01L27/06 ,  H04B1/40 ,  H01L25/18 ,  H01L23/495 ,  H01L23/00

CPC分类号： H01L27/0262 ,  H01L23/49541 ,  H01L23/5228 ,  H01L23/528 ,  H01L23/53271 ,  H01L23/552 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L25/18 ,  H01L27/0255 ,  H01L27/0647 ,  H01L29/0649 ,  H01L29/0684 ,  H01L29/0692 ,  H01L29/73 ,  H01L29/861 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48101 ,  H01L2224/48106 ,  H01L2224/48145 ,  H01L2224/48247 ,  H01L2224/49105 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2924/1203 ,  H01L2924/12036 ,  H01L2924/1207 ,  H01L2924/13034 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/1426 ,  H01L2924/3025 ,  H04B1/40 ,  H01L2924/00

摘要： An integrated circuit device for protecting circuits from transient electrical events is disclosed. An integrated circuit device includes a semiconductor substrate having formed therein a bidirectional semiconductor rectifier (SCR) having a cathode/anode electrically connected to a first terminal and an anode/cathode electrically connected to a second terminal. The integrated circuit device additionally includes a plurality of metallization levels formed above the semiconductor substrate. The integrated circuit device further includes a triggering device formed in the semiconductor substrate on a first side and adjacent to the bidirectional SCR. The triggering device includes one or more of a bipolar junction transistor (BJT) or an avalanche PN diode, where a first device terminal of the triggering device is commonly connected to the T1 with the K/A, and where a second device terminal of the triggering device is electrically connected to a central region of the bidirectional SCR through one or more of the metallization levels.

公开(公告)号：US09812436B2

公开(公告)日：2017-11-07

申请号：US14844272

申请日：2015-09-03

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yu-Ti Su ,  Wun-Jie Lin ,  Han-Jen Yang ,  Shui-Ming Cheng ,  Ming-Hsiang Song

IPC分类号： H01L29/66 ,  H01L27/02 ,  H01L27/06 ,  H01L29/74 ,  H01L27/08

CPC分类号： H01L27/0248 ,  H01L27/0262 ,  H01L27/0629 ,  H01L27/0647 ,  H01L27/0814 ,  H01L29/7436

摘要： An Electro-Static Discharge (ESD) protection circuit includes a plurality of groups of p-type heavily doped semiconductor strips (p+ strips) and a plurality of groups of n-type heavily doped semiconductor strips (n+ strips) forming an array having a plurality of rows and columns. In each of the rows and the columns, the plurality of groups of p+ strips and the plurality of groups of n+ strips are allocated in an alternating layout. The ESD protection circuit further includes a plurality of gate stacks, each including a first edge aligned to an edge of a group in the plurality of groups of p+ strips, and a second edge aligned to an edge of a group in the plurality of groups of n+ strips.

公开(公告)号：US09691753B2

公开(公告)日：2017-06-27

申请号：US15093725

申请日：2016-04-07

申请人： SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION

发明人： Lei Zhong ,  Hongwei Li ,  Wei Lei ,  Huijuan Cheng

IPC分类号： H01L29/66 ,  H01L27/02 ,  H01L27/06 ,  H01L29/87 ,  H01L29/06

CPC分类号： H01L27/0262 ,  H01L27/0647 ,  H01L27/0783 ,  H01L29/0649 ,  H01L29/87

摘要： A semiconductor device includes a P-type semiconductor substrate, an N-well and a P-well disposed adjacent to each other and extending along a first direction within the P-type semiconductor substrate, a first N+ doped region and a first P+ doped region extending along the first direction within the N-well and spaced away from each other along a second direction perpendicular to the first direction, a second N+ doped region and a second P+ doped region extending along the first direction within the P-well and spaced away from each other along the second direction, and a plurality of third N+ doped regions and a plurality of P+ doped regions alternatively disposed in a junction region formed between the N-well and P-well the third N+ doped regions. The third N+ doped regions and the third P+ doped regions form a Zener diode.

公开(公告)号：US09553085B2

公开(公告)日：2017-01-24

申请号：US14949021

申请日：2015-11-23

申请人： Mosway Semiconductor Limited

发明人： Chiu-Sing Celement Tse ,  On-Bon Peter Chan ,  Chi-Keung Tang

IPC分类号： H01L21/00 ,  H01L27/06 ,  H01L21/56 ,  H01L21/8249 ,  H01L21/84 ,  H01L23/535 ,  H01L27/082 ,  H01L27/12 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423 ,  H01L29/45 ,  H01L29/49 ,  H01L29/872

CPC分类号： H01L27/0635 ,  H01L21/565 ,  H01L21/8249 ,  H01L21/84 ,  H01L23/535 ,  H01L27/0647 ,  H01L27/0825 ,  H01L27/1203 ,  H01L29/0634 ,  H01L29/0804 ,  H01L29/0821 ,  H01L29/0847 ,  H01L29/1004 ,  H01L29/1095 ,  H01L29/41708 ,  H01L29/41758 ,  H01L29/42304 ,  H01L29/42356 ,  H01L29/42364 ,  H01L29/45 ,  H01L29/4916 ,  H01L29/872 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2924/13055 ,  H01L2924/00

摘要： A three terminal high voltage Darlington bipolar transistor power switching device includes two high voltage bipolar transistors, with collectors connected together serving as the collector terminal. The base of the first high voltage bipolar transistor serves as the base terminal. The emitter of the first high voltage bipolar transistor connects to the base of the second high voltage bipolar transistor (inner base), and the emitter of the second high voltage bipolar transistor serves as the emitter terminal. A diode has its anode connected to the inner base (emitter of the first high voltage bipolar transistor, or base of the second high voltage bipolar transistor), and its cathode connected to the base terminal. Similarly, a three terminal hybrid MOSFET/bipolar high voltage switching device can be formed by replacing the first high voltage bipolar transistor of the previous switching device by a high voltage MOSFET.

摘要翻译： 三端高压达林顿双极晶体管功率开关器件包括两个高压双极晶体管，集电极连接在一起作为集电极端子。 第一高压双极晶体管的基极用作基极端子。 第一高压双极晶体管的发射极连接到第二高压双极晶体管（内部基极）的基极，第二高压双极晶体管的发射极用作发射极端子。 二极管的阳极连接到内部基极（第一高压双极晶体管的发射极或第二高压双极晶体管的基极），其阴极连接到基极端子。 类似地，三端混合MOSFET /双极型高压开关器件可以通过用高电压MOSFET代替先前开关器件的第一高电压双极晶体管来形成。

公开(公告)号：US09520388B2

公开(公告)日：2016-12-13

申请号：US14531380

申请日：2014-11-03

申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

发明人： David M. Heminger ,  Thomas Keena

IPC分类号： H01L29/66 ,  H01L27/02 ,  H01L27/06 ,  H01L29/06 ,  H01L21/8222

CPC分类号： H01L27/0259 ,  H01L21/8222 ,  H01L27/0635 ,  H01L27/0647 ,  H01L29/0684 ,  H01L29/7408

摘要： In one embodiment, a semiconductor device may include a first transistor having a first current carrying electrode, a second current carrying electrode, and a control electrode; a first bipolar transistor having a collector coupled to the first current carrying electrode of the first transistor, a base coupled to the second current carrying electrode of the first transistor, and an emitter of the first bipolar transistor coupled to a first node of the semiconductor device. In an embodiment, the first node is connected to a terminal of a semiconductor package. An embodiment may include a semiconductor component coupled between the base of the first bipolar transistor and the emitter of the second bipolar transistor.

摘要翻译： 在一个实施例中，半导体器件可以包括具有第一载流电极，第二载流电极和控制电极的第一晶体管; 第一双极晶体管，其具有耦合到第一晶体管的第一载流电极的集电极，耦合到第一晶体管的第二载流电极的基极和耦合到半导体器件的第一节点的第一双极晶体管的发射极 。 在一个实施例中，第一节点连接到半导体封装的端子。 实施例可以包括耦合在第一双极晶体管的基极和第二双极晶体管的发射极之间的半导体元件。

公开(公告)号：US20160268250A1

公开(公告)日：2016-09-15

申请号：US15161627

申请日：2016-05-23

申请人： Sofics BVBA

发明人： Bart Sorgeloos ,  Benjamin Van Camp ,  Sven Van Wijmeersch ,  Wim Vanhouteghem

IPC分类号： H01L27/02 ,  H01L27/06 ,  H02H9/04 ,  H01L29/06

CPC分类号： H01L27/0262 ,  H01L23/60 ,  H01L27/0248 ,  H01L27/0647 ,  H01L29/0649 ,  H01L29/0688 ,  H01L29/0804 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/87 ,  H01L2924/0002 ,  H02H9/046 ,  H01L2924/00

摘要： An electrostatic discharge (ESD) protection device is disclosed including at least an NPN transistor and a PNP transistor coupled between a first node and a second node, wherein the ESD protection device may be configured to sink current from the first node to the second node in response to an ESD event. The transistors may be coupled such that a collector of the NPN may be coupled to the first node. A collector of the PNP may be coupled to the second node. A base of the NPN may be coupled to the emitter of the PNP. An emitter of the NPN may be coupled to a base of the PNP.

公开(公告)号：US20160241014A1

公开(公告)日：2016-08-18

申请号：US15029639

申请日：2014-10-03

申请人： Hitachi Automotive Systems, Ltd.

发明人： Satoshi ASANO ,  Masahiro MATSUMOTO ,  Hiroshi NAKANO ,  Shinobu TASHIRO

IPC分类号： H02H3/18 ,  G01R15/14 ,  H01L27/02 ,  H01L29/861 ,  H01L49/02 ,  H02H3/24 ,  H01L27/06

CPC分类号： H02H3/18 ,  G01R15/146 ,  H01L27/0248 ,  H01L27/0629 ,  H01L27/0647 ,  H01L28/20 ,  H01L28/40 ,  H01L29/861 ,  H02H3/24 ,  H02H11/002

摘要： Provided is a sensor device that suppresses a malfunction caused by a negative surge or a voltage drop. A sensor device includes a sensor element having an electrical characteristic varying according to a physical amount, a signal processing circuit configured to process an output signal of the sensor element, a transistor element interposed between a power source terminal and the signal processing circuit, a resistive element configured to connect a drain and a gate of the transistor element, or a collector and a base of the transistor element, and an element having threshold voltage for connecting the gate or the base of the transistor element to a GND. The element regulates current flowing from the resistive element in a direction of the GND, in a case in which supply voltage to the signal processing circuit falls below the threshold voltage.

摘要翻译： 提供抑制由负浪涌或电压降引起的故障的传感器装置。 传感器装置包括具有根据物理量而变化的电特性的传感器元件，被配置为处理传感器元件的输出信号的信号处理电路，插在电源端子和信号处理电路之间的晶体管元件，电阻 元件，被配置为连接晶体管元件的漏极和栅极，或晶体管元件的集电极和基极，以及具有用于将晶体管元件的栅极或基极连接到GND的阈值电压的元件。 在信号处理电路的电源电压低于阈值电压的情况下，该元件调节从电阻元件沿GND方向流动的电流。