公开(公告)号：US11355467B2

公开(公告)日：2022-06-07

申请号：US16983296

申请日：2020-08-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taeho Ko ,  Daehee Lee ,  Hyunchul Jung

IPC: H01L23/31 ,  H01L23/00

Abstract: A semiconductor device may include a semiconductor chip in an encapsulant. A first insulation layer may be disposed on the encapsulant and the semiconductor chip. A horizontal wiring and a primary pad may be disposed on the first insulation layer. A secondary pad may be disposed on the primary pad. A second insulation layer covering the horizontal wiring may be disposed on the first insulation layer. A solder ball may be disposed on the primary pad and the secondary pad. The primary pad may have substantially the same thickness as a thickness of the horizontal wiring.

公开(公告)号：US11355445B2

公开(公告)日：2022-06-07

申请号：US17007945

申请日：2020-08-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joonsung Kim ,  Doohwan Lee ,  Taeho Ko ,  Bongsoo Kim ,  Seokbong Park

IPC: H01L23/538 ,  H01L23/31 ,  H01L23/66 ,  H01L23/00 ,  H01L25/065 ,  H01L25/10 ,  H01L21/683 ,  H01L21/48 ,  H01L21/56 ,  H01P3/08 ,  H01P11/00 ,  H01L23/29

Abstract: A semiconductor package includes a lower connection structure, a semiconductor chip on the lower connection structure, an upper connection structure including a first conductive pattern layer on the semiconductor chip, a first insulating layer on the first conductive pattern layer, a second conductive pattern layer on the first insulating layer, a first via penetrating the first insulating layer to extend between the first conductive pattern layer and the second conductive pattern layer, and a second insulating layer extending between a side surface of the first via and the first insulating layer, and an intermediate connection structure between the lower connection structure and the upper connection structure. A chemical composition of the first insulating layer may differ from a chemical composition of the second insulating layer.

公开(公告)号：US11735532B2

公开(公告)日：2023-08-22

申请号：US17664132

申请日：2022-05-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joonsung Kim ,  Doohwan Lee ,  Taeho Ko ,  Bongsoo Kim ,  Seokbong Park

IPC: H01L23/538 ,  H01L23/31 ,  H01L23/66 ,  H01L23/00 ,  H01L25/065 ,  H01L25/10 ,  H01L21/683 ,  H01L21/48 ,  H01L21/56 ,  H01P3/08 ,  H01P11/00 ,  H01L23/29

CPC classification number: H01L23/5389 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/565 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/295 ,  H01L23/3128 ,  H01L23/5383 ,  H01L23/5386 ,  H01L23/66 ,  H01L24/19 ,  H01L24/20 ,  H01L25/0657 ,  H01L25/105 ,  H01P3/081 ,  H01P11/003 ,  H01L2221/68372 ,  H01L2223/6627 ,  H01L2224/214 ,  H01L2225/0651 ,  H01L2225/06568 ,  H01L2225/06586 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/19032 ,  H01L2924/19041 ,  H01L2924/19103

Abstract: A semiconductor package includes a lower connection structure, a semiconductor chip on the lower connection structure, an upper connection structure including a first conductive pattern layer on the semiconductor chip, a first insulating layer on the first conductive pattern layer, a second conductive pattern layer on the first insulating layer, a first via penetrating the first insulating layer to extend between the first conductive pattern layer and the second conductive pattern layer, and a second insulating layer extending between a side surface of the first via and the first insulating layer, and an intermediate connection structure between the lower connection structure and the upper connection structure. A chemical composition of the first insulating layer may differ from a chemical composition of the second insulating layer.

公开(公告)号：US11652076B2

公开(公告)日：2023-05-16

申请号：US17736536

申请日：2022-05-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taeho Ko ,  Daehee Lee ,  Hyunchul Jung

IPC: H01L23/31 ,  H01L23/00

CPC classification number: H01L24/24 ,  H01L23/3128 ,  H01L24/05 ,  H01L24/13 ,  H01L24/82 ,  H01L2224/03462 ,  H01L2224/03903 ,  H01L2224/0401 ,  H01L2224/05006 ,  H01L2224/05552 ,  H01L2224/05553 ,  H01L2224/05556 ,  H01L2224/05564 ,  H01L2224/05573 ,  H01L2224/05582 ,  H01L2224/05647 ,  H01L2224/13006 ,  H01L2224/245 ,  H01L2224/24101 ,  H01L2224/24155 ,  H01L2224/82101 ,  H01L2224/82106

Abstract: A semiconductor device may include a semiconductor chip in an encapsulant. A first insulation layer may be disposed on the encapsulant and the semiconductor chip. A horizontal wiring and a primary pad may be disposed on the first insulation layer. A secondary pad may be disposed on the primary pad. A second insulation layer covering the horizontal wiring may be disposed on the first insulation layer. A solder ball may be disposed on the primary pad and the secondary pad. The primary pad may have substantially the same thickness as a thickness of the horizontal wiring.

公开(公告)号：US20210202397A1

公开(公告)日：2021-07-01

申请号：US17007945

申请日：2020-08-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joonsung Kim ,  Doohwan Lee ,  Taeho Ko ,  Bongsoo Kim ,  Seokbong Park

IPC: H01L23/538 ,  H01L23/29 ,  H01L23/31 ,  H01L23/66 ,  H01L23/00 ,  H01L25/065 ,  H01L25/10 ,  H01L21/683 ,  H01L21/48 ,  H01L21/56 ,  H01P3/08 ,  H01P11/00

Abstract: A semiconductor package includes a lower connection structure, a semiconductor chip on the lower connection structure, an upper connection structure including a first conductive pattern layer on the semiconductor chip, a first insulating layer on the first conductive pattern layer, a second conductive pattern layer on the first insulating layer, a first via penetrating the first insulating layer to extend between the first conductive pattern layer and the second conductive pattern layer, and a second insulating layer extending between a side surface of the first via and the first insulating layer, and an intermediate connection structure between the lower connection structure and the upper connection structure. A chemical composition of the first insulating layer may differ from a chemical composition of the second insulating layer.

公开(公告)号：US20240321700A1

公开(公告)日：2024-09-26

申请号：US18612492

申请日：2024-03-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Daeyeun Choi ,  Taeho Ko ,  Unbyoung Kang ,  Seokbong Park

IPC: H01L23/498 ,  H01L21/52 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L25/10 ,  H10B80/00

CPC classification number: H01L23/49811 ,  H01L21/52 ,  H01L21/56 ,  H01L23/3107 ,  H01L24/16 ,  H01L24/19 ,  H01L24/20 ,  H01L24/81 ,  H01L25/105 ,  H10B80/00 ,  H01L2224/16227 ,  H01L2224/19 ,  H01L2224/2101 ,  H01L2224/22 ,  H01L2224/81

Abstract: A semiconductor package includes an upper redistribution structure, a first substrate, a first semiconductor chip, a second semiconductor chip, a bridge chip, and a first insulating layer. The upper redistribution structure includes an upper redistribution insulating layer and upper redistribution patterns. The first substrate includes an upper surface, a lower surface, a first cavity extending in a vertical direction, and a second cavity provided apart from the first cavity in a horizontal direction and extending in the vertical direction. The first substrate is on an upper surface of the upper redistribution structure. The first semiconductor chip is accommodated in the first cavity and electrically connected to a subset of the upper redistribution patterns. The second semiconductor chip is accommodated in the second cavity and electrically connected to a subset of the upper redistribution patterns. The bridge chip is below the upper redistribution structure. The first insulating layer surrounds the bridge chip.

公开(公告)号：US20220278049A1

公开(公告)日：2022-09-01

申请号：US17664132

申请日：2022-05-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joonsung Kim ,  Doohwan Lee ,  Taeho Ko ,  Bongsoo Kim ,  Seokbong Park

IPC: H01L23/538 ,  H01L23/31 ,  H01L23/66 ,  H01L23/00 ,  H01L25/065 ,  H01L25/10 ,  H01L21/683 ,  H01L21/48 ,  H01L21/56 ,  H01P3/08 ,  H01P11/00 ,  H01L23/29

Abstract: A semiconductor package includes a lower connection structure, a semiconductor chip on the lower connection structure, an upper connection structure including a first conductive pattern layer on the semiconductor chip, a first insulating layer on the first conductive pattern layer, a second conductive pattern layer on the first insulating layer, a first via penetrating the first insulating layer to extend between the first conductive pattern layer and the second conductive pattern layer, and a second insulating layer extending between a side surface of the first via and the first insulating layer, and an intermediate connection structure between the lower connection structure and the upper connection structure. A chemical composition of the first insulating layer may differ from a chemical composition of the second insulating layer.