公开(公告)号：US11487677B2

公开(公告)日：2022-11-01

申请号：US16996304

申请日：2020-08-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Min Gon Shin ,  Ji Soo Kim ,  Seung-Jae Lee ,  Ye Jin Yoon ,  Hwa Soo Lee

IPC: G06F12/14 ,  G06F13/16 ,  G06F21/31 ,  G06F13/42 ,  G06F21/79 ,  G06F13/12

Abstract: A storage device including: a bridge board to receive a first command; an authenticator to receive user information; and a memory device to receive the first command from the bridge board, the memory device includes a memory controller which determines a status of the memory device, provides status information including the determined status of the memory device to the bridge board, determines the status of the memory device as an unlocked status or a locked status, the bridge board includes a transceiver which communicates with the host through an interface, a register which stores interface information, and a bridge board controller which generates a first response to the first command in a format corresponding to the interface using the interface information, and provides the first response to a host, the first response includes a status bit which inhibits or allows a write operation with respect to the memory device.

公开(公告)号：US10796766B2

公开(公告)日：2020-10-06

申请号：US16810029

申请日：2020-03-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung-min Joe ,  Seung-Jae Lee ,  Sun-gun Lee

IPC: G11C7/04 ,  G11C16/04 ,  G11C16/10 ,  G11C16/34 ,  G11C16/08 ,  G11C16/32 ,  G11C11/56 ,  G11C8/14 ,  H01L27/11582

Abstract: A method of programming a non-volatile memory device including a first memory block and a second memory block includes: performing a first program operation on a first memory cell in the first memory block and connected to a first word line of a first level with respect to a substrate; after the performing of the first program operation on the first memory cell, performing the first program operation on a second memory cell in the second memory block and connected to a second word line of the first level; and after the performing of the first program operation on the second memory cell, performing a second program operation on the first memory cell.

公开(公告)号：US10734082B2

公开(公告)日：2020-08-04

申请号：US16275108

申请日：2019-02-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Han-Jun Lee ,  Seung-Bum Kim ,  Chul-Bum Kim ,  Seung-Jae Lee

IPC: G11C16/28 ,  G11C16/34 ,  G11C16/16 ,  G11C8/14 ,  G11C16/24 ,  G11C7/18 ,  G11C16/08 ,  G11C29/08 ,  G11C7/04

Abstract: A memory device includes multiple word lines. A method of operating the memory device includes: performing a first dummy read operation, with respect to first memory cells connected to a first word line among the word lines, by applying a dummy read voltage, having an offset level of a first level, to the first word line; determining, based on a result of the performing of the first dummy read operation, degradation of a threshold voltage distribution of the first memory cells; adjusting an offset level of the dummy read voltage as a second level, based on a result of the determining of the threshold voltage distribution; and performing a second dummy read operation with respect to second memory cells connected to a second word line among the word lines, by applying a dummy read voltage, having the offset level adjusted as the second level, to the second word line among the word lines.

公开(公告)号：US10734051B2

公开(公告)日：2020-08-04

申请号：US16591683

申请日：2019-10-03

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  KOREA UNIVERSITY Research and Business Foundation

Inventor： Woo Chang Lim ,  Kyung-Jin Lee ,  Gyungchoon Go ,  Seung-Jae Lee

IPC: H01L27/22 ,  G11C11/16 ,  G11C11/15 ,  H01L43/08 ,  H01L43/02

Abstract: Embodiments provide a magnetic memory device and a method of writing a magnetic memory device. The magnetic memory device includes a magnetic tunnel junction including a reference layer, a free layer and a tunnel barrier layer between the reference and free layers, and a first conductive line adjacent to the free layer. A first spin-orbit current having a frequency decreasing with time flows through the first conductive line. The writing method includes applying the first spin-orbit current having the frequency decreasing with time to the first conductive line.

公开(公告)号：US09305921B2

公开(公告)日：2016-04-05

申请号：US14565903

申请日：2014-12-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Chan Lee ,  Seung-Jae Lee ,  Sang-Bom Kang ,  Dae-Young Kwak ,  Myeong-Cheol Kim ,  Yong-Ho Jeon

IPC: H01L31/058 ,  H01L27/088 ,  H01L21/764 ,  H01L27/11 ,  H01L27/12

CPC classification number: H01L27/088 ,  H01L21/764 ,  H01L27/0886 ,  H01L27/1116 ,  H01L27/1211

Abstract: A semiconductor device including: a first gate pattern disposed in a peripheral region of a substrate; a second gate pattern disposed in a cell region of the substrate; a first insulator formed on sidewalls of the first gate pattern; and a second insulator formed on sidewalls of the second gate pattern, wherein a dielectric constant of the first insulator is different from a dielectric constant of the second insulator, and wherein a height of the second insulator is greater than a height of the second gate pattern.

Abstract translation: 一种半导体器件，包括：设置在衬底的周边区域中的第一栅极图案; 设置在所述基板的单元区域中的第二栅极图案; 形成在第一栅极图案的侧壁上的第一绝缘体; 以及形成在所述第二栅极图案的侧壁上的第二绝缘体，其中所述第一绝缘体的介电常数不同于所述第二绝缘体的介电常数，并且其中所述第二绝缘体的高度大于所述第二栅极图案的高度 。

公开(公告)号：US08809888B2

公开(公告)日：2014-08-19

申请号：US13800188

申请日：2013-03-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yu-Sik Kim ,  Seong-Deok Hwang ,  Seung-Jae Lee ,  Sun-Pil Youn

IPC: H01L33/00

CPC classification number: H01L33/48 ,  H01L33/20 ,  H01L33/24 ,  H01L33/405 ,  H01L33/44 ,  H01L33/46 ,  H01L2224/05001 ,  H01L2224/05026 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05184 ,  H01L2224/05186 ,  H01L2224/05568 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/05671 ,  H01L2224/05684 ,  H01L2224/13 ,  H01L2224/48091 ,  H01L2924/12044 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/0542 ,  H01L2924/0543 ,  H01L2924/0544

Abstract: Provided is a light emitting element, a light emitting device including the same, and fabrication methods of the light emitting element and light emitting device. The light emitting device comprises a substrate, a light emitting structure including a first conductive layer of a first conductivity type, a light emitting layer, and a second conductive layer of a second conductivity type which are sequentially stacked, a first electrode which is electrically connected with the first conductive layer; and a second electrode which is electrically connected with the second conductive layer and separated apart from the first electrode, wherein at least a part of the second electrode is connected from a top of the light emitting structure, through a sidewall of the light emitting structure, and to a sidewall of the substrate.

Abstract translation: 提供了一种发光元件，包括该发光元件的发光器件，以及发光元件和发光器件的制造方法。 发光装置包括基板，发光结构，其包括依次堆叠的第一导电类型的第一导电层，发光层和第二导电类型的第二导电层，电连接的第一电极 与第一导电层; 以及与所述第二导电层电连接并与所述第一电极分离的第二电极，其中所述第二电极的至少一部分通过所述发光结构的侧壁从所述发光结构的顶部连接， 和衬底的侧壁。

公开(公告)号：US11520896B2

公开(公告)日：2022-12-06

申请号：US17237532

申请日：2021-04-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin Taek Kwon ,  Ye Jin Yoon ,  Seung-Jae Lee ,  Ji Soo Kim

IPC: G06F21/57 ,  G06F21/64 ,  G06F21/79

Abstract: A storage device is provided. The storage device includes a boot ROM stores a plurality of public keys and a boot ROM image, an OTP memory identifies a first public key among the plurality of public keys, a first memory including a first area the stores the plurality of public keys and a flash boot image different from the boot ROM image, and a second area that stores a first boot signature corresponding to the flash boot image, a second memory including a first firmware image including a first firmware signature, and a memory controller that receives a second firmware image including a second firmware signature and a second boot signature, receives a second public key among the plurality of public keys and the flash boot image based on the second firmware image being received, and write the second boot signature in the second area of the first memory.

公开(公告)号：US11381388B2

公开(公告)日：2022-07-05

申请号：US16674413

申请日：2019-11-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunsook Hong ,  Jintaek Kwon ,  Myeongjong Lee ,  Seung-Jae Lee ,  Seokgi Hong ,  Byung-Gook Kim ,  Jisoo Kim

IPC: H04L9/08 ,  G06F12/14 ,  H04L9/32

Abstract: A storage device includes a nonvolatile memory device, and a controller that manages a data encryption key (DEK). The DEK is used to encrypt data to be written in a storage space of the nonvolatile memory device by a first user and to decrypt data read from the storage space. The controller grants a second user authority to access the storage space by encrypting the DEK based on a Diffie-Hellman (DH) algorithm, grants a second user authority to access the encrypted DEK, and decrypts the encrypted DEK based on the DH algorithm.

公开(公告)号：US10482939B2

公开(公告)日：2019-11-19

申请号：US15822877

申请日：2017-11-27

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  KOREA UNIVERSITY Research and Business Foundation

Inventor： Woo Chang Lim ,  Kyung-Jin Lee ,  Gyungchoon Go ,  Seung-Jae Lee

IPC: H01L21/28 ,  G11C11/16 ,  G11C11/15 ,  H01L27/22 ,  H01L43/08 ,  H01L43/02

Abstract: Embodiments provide a magnetic memory device and a method of writing a magnetic memory device. The magnetic memory device includes a magnetic tunnel junction including a reference layer, a free layer and a tunnel barrier layer between the reference and free layers, and a first conductive line adjacent to the free layer. A first spin-orbit current having a frequency decreasing with time flows through the first conductive line. The writing method includes applying the first spin-orbit current having the frequency decreasing with time to the first conductive line.

公开(公告)号：US20190096488A1

公开(公告)日：2019-03-28

申请号：US16135213

申请日：2018-09-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SUNG-MIN JOE ,  Seung-Jae Lee ,  Sun-gun Lee

IPC: G11C16/10 ,  G11C16/08 ,  G11C16/34 ,  G11C8/14 ,  H01L27/11582

Abstract: A method of programming a non-volatile memory device including a first memory block and a second memory block includes: performing a first program operation on a first memory cell in the first memory block and connected to a first word line of a first level with respect to a substrate; after the performing of the first program operation on the first memory cell, performing the first program operation on a second memory cell in the second memory block and connected to a second word line of the first level; and after the performing off the first program operation on the second memory cell, performing a second program operation on the first memory cell.