公开(公告)号：US10796766B2

公开(公告)日：2020-10-06

申请号：US16810029

申请日：2020-03-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung-min Joe ,  Seung-Jae Lee ,  Sun-gun Lee

IPC: G11C7/04 ,  G11C16/04 ,  G11C16/10 ,  G11C16/34 ,  G11C16/08 ,  G11C16/32 ,  G11C11/56 ,  G11C8/14 ,  H01L27/11582

Abstract: A method of programming a non-volatile memory device including a first memory block and a second memory block includes: performing a first program operation on a first memory cell in the first memory block and connected to a first word line of a first level with respect to a substrate; after the performing of the first program operation on the first memory cell, performing the first program operation on a second memory cell in the second memory block and connected to a second word line of the first level; and after the performing of the first program operation on the second memory cell, performing a second program operation on the first memory cell.