Abstract:
A package comprising a substrate comprising at least one dielectric layer and a plurality of interconnects; a first integrated device coupled to the substrate through a first plurality of solder interconnects, wherein the first plurality of solder interconnects includes a first plurality of inner solder interconnects and a first plurality of perimeter solder interconnects; and a second integrated device coupled to the substrate through a second plurality of solder interconnects. The first integrated device is configured to be electrically coupled to the second integrated device through an electrical path. The electrical path comprises an inner solder interconnect from the first plurality of inner solder interconnects, at least one interconnect from the plurality of interconnects, and a solder interconnect from the second plurality of solder interconnects.
Abstract:
Signal timing drift in a synchronous dynamic random access memory (SDRAM) system may be compensated for by performing write signal timing training using a multi-purpose command (MPC) first-in-first-out (FIFO) write and MPC FIFO read at periodic intervals interspersed with mission-mode SDRAM traffic. The test result samples obtained from the write signal timing training may be analyzed independently of mission-mode SDRAM traffic. The mission-mode timing of the SDRAM data bit signals relative to the SDRAM write clock signal may be adjusted based on the analysis.
Abstract:
Methods and apparatuses for improve clocking scheme to reduce power consumption are presented. The apparatus includes a host configured to communicate with a memory via a link. The host is further configured to receive a first clock from the memory; to receive, based on the first clock, data from the memory, in a first mode of a read operation; to generate a second clock, the second clock being generated independent of the first clock; and to receive, based on the second clock, data from the memory, in a second mode of the read operation.
Abstract:
Writing to and reading from dynamic random access memory (DRAM) by a system on chip (SoC) over a multiphase multilane memory bus has power consumption optimized based on bit error rate (BER) and one or more thresholds. The bit error rate (BER) may be measured and used to control parameters to achieve optimal balance between power consumption and accuracy. The bit error rate (BER) measurement, purposely adding jitter, and checking against the thresholds is performed during normal mission-mode operation with live traffic. Error detection may cover every memory data transaction that has a block of binary data.
Abstract:
A method of controlling signal termination includes providing first logic for selectively terminating signals received at a first device on a bidirectional data bus, providing second logic for selectively terminating signals received at a second device on the bidirectional data bus, sending first signals from the first device to the second device on the bidirectional data bus at a first speed, stopping the sending of the first signals, after stopping the sending of the first signals, enabling the second logic and shifting a reference voltage of the second device from a first level to a second level, after enabling the second logic at the second device, sending second signals from the first device to the second device on the bidirectional data bus at a higher speed, and controlling the first logic based on a speed of signals received at the first device on the bidirectional data bus.