公开(公告)号：US20160149712A1

公开(公告)日：2016-05-26

申请号：US15011255

申请日：2016-01-29

Applicant: QUALCOMM Incorporated

Inventor： Xu Guo ,  David M. Jacobson ,  Yafei Yang ,  Adam J. Drew ,  Brian Marc Rosenberg

IPC: H04L9/32 ,  H04L29/06

CPC classification number: H04L9/3278 ,  G06F7/588 ,  H04L63/08 ,  H04L63/0853 ,  H04L63/0876 ,  H04L63/0884

Abstract: An authentication device is provided that authenticates an electronic device based on the responses from distinct types of physically unclonable functions. The authentication device receives a device identifier associated with the electronic device. It then sends one or more challenges to the electronic device. In response, the authentication device receives one or more responses from the electronic device, the one or more responses including characteristic information generated from two or more distinct types of physically unclonable functions in the electronic device.

Abstract translation: 提供了一种认证装置，其基于来自不同类型的物理不可克隆功能的响应来认证电子设备。 认证设备接收与电子设备相关联的设备标识符。 然后，它向电子设备发送一个或多个挑战。 作为响应，认证设备从电子设备接收一个或多个响应，所述一个或多个响应包括从电子设备中的两个或多个不同类型的物理不可克隆功能产生的特征信息。

公开(公告)号：US09214214B2

公开(公告)日：2015-12-15

申请号：US14072634

申请日：2013-11-05

Applicant: QUALCOMM Incorporated

Inventor： Xiaochun Zhu ,  Steven M. Millendorf ,  Xu Guo ,  David M. Jacobson ,  Kangho Lee ,  Seung H. Kang ,  Matthew Michael Nowak

IPC: G11C11/16 ,  H04L9/30 ,  H04L9/32

CPC classification number: G11C11/1675 ,  G11C11/161 ,  G11C11/1695 ,  H04L9/0866 ,  H04L9/30 ,  H04L9/3278

Abstract: One feature pertains to a method of implementing a physically unclonable function (PUF). The method includes exposing an array of magnetoresistive random access memory (MRAM) cells to an orthogonal external magnetic field. The MRAM cells are each configured to represent one of a first logical state and a second logical state, and the orthogonal external magnetic field is oriented in an orthogonal direction to an easy axis of a free layer of the MRAM cells to place the MRAM cells in a neutral logical state that is not the first logical state or the second logical state. The method further includes removing the orthogonal external magnetic field to place each of the MRAM cells of the array randomly in either the first logical state or the second logical state.

Abstract translation: 一个特征涉及实现物理不可克隆功能（PUF）的方法。 该方法包括将磁阻随机存取存储器（MRAM）阵列阵列暴露于正交外部磁场。 MRAM单元各自被配置为表示第一逻辑状态和第二逻辑状态之一，并且正交外部磁场定向为与MRAM单元的自由层的容易轴正交的方向，以将MRAM单元置于 不是第一逻辑状态或第二逻辑状态的中性逻辑状态。 该方法还包括去除正交的外部磁场，将阵列的每个MRAM单元随机地置于第一逻辑状态或第二逻辑状态中。

公开(公告)号：US09230630B2

公开(公告)日：2016-01-05

申请号：US14072599

申请日：2013-11-05

Applicant: QUALCOMM Incorporated

Inventor： Xiaochun Zhu ,  Steven M. Millendorf ,  Xu Guo ,  David M. Jacobson ,  Kangho Lee ,  Seung H. Kang ,  Matthew Michael Nowak

IPC: G11C11/16 ,  H04L9/30 ,  H04L9/08 ,  H04L9/32

CPC classification number: G11C11/1673 ,  G09C1/00 ,  G11C11/161 ,  H04L9/0866 ,  H04L9/30 ,  H04L9/3278

Abstract: One feature pertains to a method for implementing a physically unclonable function (PUF). The method includes providing an array of magnetoresistive random access memory (MRAM) cells, where the MRAM cells are each configured to represent one of a first logical state and a second logical state. The array of MRAM cells are un-annealed and free from exposure to an external magnetic field oriented in a direction configured to initialize the MRAM cells to a single logical state of the first and second logical states. Consequently, each MRAM cell has a random initial logical state of the first and second logical states. The method further includes sending a challenge to the MRAM cell array that reads logical states of select MRAM cells of the array, and obtaining a response to the challenge from the MRAM cell array that includes the logical states of the selected MRAM cells of the array.

Abstract translation: 一个特征涉及用于实现物理不可克隆功能（PUF）的方法。 该方法包括提供磁阻随机存取存储器（MRAM）单元阵列，其中MRAM单元被配置为表示第一逻辑状态和第二逻辑状态之一。 MRAM单元的阵列是未退火的，并且没有暴露于被配置为将MRAM单元初始化的方向定向到第一和第二逻辑状态的单个逻辑状态的外部磁场。 因此，每个MRAM单元具有第一和第二逻辑状态的随机初始逻辑状态。 该方法还包括向MRAM单元阵列发送挑战，该MRAM单元阵列读取阵列的选择MRAM单元的逻辑状态，以及从包括阵列的所选MRAM单元的逻辑状态的MRAM单元阵列获得对挑战的响应。

公开(公告)号：US20150070979A1

公开(公告)日：2015-03-12

申请号：US14072537

申请日：2013-11-05

Applicant: QUALCOMM Incorporated

Inventor： Xiaochun Zhu ,  Steven M. Millendorf ,  Xu Guo ,  David M. Jacobson ,  Kangho Lee ,  Seung H. Kang ,  Matthew Michael Nowak

IPC: G11C11/16

CPC classification number: G11C11/1695 ,  G09C1/00 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H04L9/0866 ,  H04L9/3278 ,  H04L2209/12

Abstract: One feature pertains to a method of implementing a physically unclonable function. The method includes initializing an array of magnetoresistive random-access memory (MRAM) cells to a first logical state, where each of the MRAM cells have a random transition voltage that is greater than a first voltage and less than a second voltage. The transition voltage represents a voltage level that causes the MRAM cells to transition from the first logical state to a second logical state. The method further includes applying a programming signal voltage to each of the MRAM cells of the array to cause at least a portion of the MRAM cells of the array to randomly change state from the first logical state to the second logical state, where the programming signal voltage is greater than the first voltage and less than the second voltage.

Abstract translation: 一个特征涉及实现物理上不可克隆功能的方法。 该方法包括将磁阻随机存取存储器（MRAM）单元的阵列初始化为第一逻辑状态，其中每个MRAM单元具有大于第一电压且小于第二电压的随机转变电压。 转换电压表示使MRAM单元从第一逻辑状态转换到第二逻辑状态的电压电平。 该方法还包括将编程信号电压施加到阵列的每个MRAM单元，以使阵列的MRAM单元的至少一部分随机地将状态从第一逻辑状态改变到第二逻辑状态，其中编程信号 电压大于第一电压且小于第二电压。

公开(公告)号：US09673983B2

公开(公告)日：2017-06-06

申请号：US13764524

申请日：2013-02-11

Applicant: QUALCOMM Incorporated

Inventor： David M. Jacobson ,  Billy B. Brumley

IPC: H04L9/32 ,  H04L9/00 ,  H04L29/06 ,  H04W12/02 ,  H04W28/06

CPC classification number: H04L9/3242 ,  H04L9/002 ,  H04L9/3223 ,  H04L9/3239 ,  H04L63/0428 ,  H04L63/123 ,  H04L63/1475 ,  H04L63/166 ,  H04L69/04 ,  H04L2209/16 ,  H04L2209/20 ,  H04L2209/24 ,  H04L2209/30 ,  H04W12/02 ,  H04W28/06

Abstract: Disclosed is a method for protecting message data. In the method, the message data is padded with padding bits generated based on a deterministic function performed on the message data. The padded message data is compressed to generate compressed data. A length of the compressed data is dependent on the padding bits. The compressed data is encrypted to generate encrypted message data.

公开(公告)号：US20150071431A1

公开(公告)日：2015-03-12

申请号：US14072634

申请日：2013-11-05

Applicant: QUALCOMM Incorporated

Inventor： Xiaochun Zhu ,  Steven M. Millendorf ,  Xu Guo ,  David M. Jacobson ,  Kangho Lee ,  Seung H. Kang ,  Matthew Michael Nowak

IPC: G11C11/16 ,  H04L9/30

CPC classification number: G11C11/1675 ,  G11C11/161 ,  G11C11/1695 ,  H04L9/0866 ,  H04L9/30 ,  H04L9/3278

Abstract: One feature pertains to a method of implementing a physically unclonable function (PUF). The method includes exposing an array of magnetoresistive random access memory (MRAM) cells to an orthogonal external magnetic field. The MRAM cells are each configured to represent one of a first logical state and a second logical state, and the orthogonal external magnetic field is oriented in an orthogonal direction to an easy axis of a free layer of the MRAM cells to place the MRAM cells in a neutral logical state that is not the first logical state or the second logical state. The method further includes removing the orthogonal external magnetic field to place each of the MRAM cells of the array randomly in either the first logical state or the second logical state.

Abstract translation: 一个特征涉及实现物理不可克隆功能（PUF）的方法。 该方法包括将磁阻随机存取存储器（MRAM）阵列阵列暴露于正交外部磁场。 MRAM单元各自被配置为表示第一逻辑状态和第二逻辑状态之一，并且正交外部磁场定向为与MRAM单元的自由层的容易轴正交的方向，以将MRAM单元置于 不是第一逻辑状态或第二逻辑状态的中性逻辑状态。 该方法还包括去除正交的外部磁场，将阵列的每个MRAM单元随机地置于第一逻辑状态或第二逻辑状态中。

公开(公告)号：US20150071430A1

公开(公告)日：2015-03-12

申请号：US14072599

申请日：2013-11-05

Applicant: QUALCOMM Incorporated

Inventor： Xiaochun Zhu ,  Steven M. Millendorf ,  Xu Guo ,  David M. Jacobson ,  Kangho Lee ,  Seung H. Kang ,  Matthew Michael Nowak

IPC: G11C11/16 ,  H04L9/30

CPC classification number: G11C11/1673 ,  G09C1/00 ,  G11C11/161 ,  H04L9/0866 ,  H04L9/30 ,  H04L9/3278

Abstract: One feature pertains to a method for implementing a physically unclonable function (PUF). The method includes providing an array of magnetoresistive random access memory (MRAM) cells, where the MRAM cells are each configured to represent one of a first logical state and a second logical state. The array of MRAM cells are un-annealed and free from exposure to an external magnetic field oriented in a direction configured to initialize the MRAM cells to a single logical state of the first and second logical states. Consequently, each MRAM cell has a random initial logical state of the first and second logical states. The method further includes sending a challenge to the MRAM cell array that reads logical states of select MRAM cells of the array, and obtaining a response to the challenge from the MRAM cell array that includes the logical states of the selected MRAM cells of the array.

Abstract translation: 一个特征涉及用于实现物理不可克隆功能（PUF）的方法。 该方法包括提供磁阻随机存取存储器（MRAM）单元阵列，其中MRAM单元被配置为表示第一逻辑状态和第二逻辑状态之一。 MRAM单元的阵列是未退火的，并且没有暴露于被配置为将MRAM单元初始化的方向定向到第一和第二逻辑状态的单个逻辑状态的外部磁场。 因此，每个MRAM单元具有第一和第二逻辑状态的随机初始逻辑状态。 该方法还包括向MRAM单元阵列发送挑战，该MRAM单元阵列读取阵列的选择MRAM单元的逻辑状态，以及从包括阵列的所选MRAM单元的逻辑状态的MRAM单元阵列获得对挑战的响应。

公开(公告)号：US20140108478A1

公开(公告)日：2014-04-17

申请号：US13651954

申请日：2012-10-15

Applicant: QUALCOMM INCORPORATED

Inventor： Kangho Lee ,  Taehyun Kim ,  Xiaochun Zhu ,  David M. Jacobson ,  Raghu Sagar Madala ,  Wenqing Wu ,  Jung Pill Kim ,  Seung H. Kang

IPC: G06F7/58

CPC classification number: G06F7/588

Abstract: A random number generator system that utilizes a magnetic tunnel junction (MTJ) that is controlled by an STT-MTJ entropy controller that determines whether to proceed with generating random numbers or not by monitoring the health of the MTJ-based random number generator is illustrated. If the health of the random number generation is above a threshold, the STT-MTJ entropy controller shuts down the MTJ-based random number generator and sends a message to a requesting chipset that a secure key generation is not possible. If the health of the random number generation is below a threshold, the entropy controller allows the MTJ-based random number generator to generate random numbers based on a specified algorithm, the output of which is post processed and used by a cryptographic-quality deterministic random bit generator to generate a security key for a requesting chipset.

Abstract translation: 示出了利用由STT-MTJ熵控制器控制的磁隧道结（MTJ）的随机数发生器系统，其通过监测基于MTJ的随机数发生器的健康来确定是否继续生成随机数。 如果随机数生成的健康状况高于阈值，则STT-MTJ熵控制器关闭基于MTJ的随机数生成器，并且向请求芯片组发送消息，即不可能产生安全密钥。 如果随机数生成的健康状况低于阈值，则熵控制器允许基于MTJ的随机数发生器基于指定的算法产生随机数，其输出被后处理并由加密质量确定性随机使用 以产生请求芯片组的安全密钥。

公开(公告)号：US09787480B2

公开(公告)日：2017-10-10

申请号：US13975082

申请日：2013-08-23

Applicant: QUALCOMM Incorporated

Inventor： Xu Guo ,  David M. Jacobson ,  Yafei Yang ,  Adam J. Drew ,  Brian Marc Rosenberg

IPC: H04L9/32 ,  H04L29/06 ,  G06F7/58

CPC classification number: H04L9/3278 ,  G06F7/588 ,  H04L63/08 ,  H04L63/0853 ,  H04L63/0876 ,  H04L63/0884

Abstract: One feature pertains to generating a unique identifier for an electronic device by combining static random access memory (SRAM) PUFs and circuit delay based PUFs (e.g., ring oscillator (RO) PUFs, arbiter PUFs, etc.). The circuit delay based PUFs may be used to conceal either a challenge to, and/or response from, the SRAM PUFs, thereby inhibiting an attacker from being able to clone a memory device's response.

公开(公告)号：US09298946B2

公开(公告)日：2016-03-29

申请号：US14072735

申请日：2013-11-05

Applicant: QUALCOMM Incorporated

Inventor： Xiaochun Zhu ,  Steven M. Millendorf ,  Xu Guo ,  David M. Jacobson ,  Kangho Lee ,  Seung H. Kang ,  Matthew Michael Nowak

IPC: G11C17/02 ,  G06F21/70 ,  G06F1/26 ,  G11C11/16 ,  H04L9/08 ,  H04L9/32 ,  G09C1/00

CPC classification number: G06F21/70 ,  G06F1/26 ,  G09C1/00 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1695 ,  G11C17/02 ,  G11C17/14 ,  H04L9/0866 ,  H04L9/3278 ,  H04L2209/12

Abstract: One feature pertains to a method of implementing a physically unclonable function that includes providing an array of metal-insulator-metal (MIM) devices, where the MIM devices are configured to represent a first resistance state or a second resistance state and a plurality of the MIM devices are initially at the first resistance state. The MIM devices have a random breakdown voltage that is greater than a first voltage and less than a second voltage, where the breakdown voltage represents a voltage that causes the MIM devices to transition from the first resistance state to the second resistance state. The method further includes applying a signal line voltage to the MIM devices to cause a portion of the MIM devices to randomly breakdown and transition from the first resistance state to the second resistance state, the signal line voltage greater than the first voltage and less than the second voltage.

Abstract translation: 一个特征涉及实现物理上不可克隆的功能的方法，其包括提供金属 - 绝缘体 - 金属（MIM）器件的阵列，其中MIM器件被配置为表示第一电阻状态或第二电阻状态，并且多个 MIM器件最初处于第一电阻状态。 MIM器件具有大于第一电压且小于第二电压的随机击穿电压，其中击穿电压表示使MIM器件从第一电阻状态转变到第二电阻状态的电压。 该方法还包括向MIM器件施加信号线电压以使MIM器件的一部分随机击穿并从第一电阻状态转变到第二电阻状态，信号线电压大于第一电压并小于 第二电压。