Abstract:
According to one embodiment, a magnetic device includes: a first conductive layer; a first magnetoresistive effect element disposed on the first S conductive layer and including a first control terminal;and a first circuit configured to supply a first current in a first direction into the first conductive layer and apply a first control voltage to the first control terminal of the first magnetoresistive effect element, wherein in a case in which the first current is supplied to the first conductive layer, the first magnetoresistive effect element holds a value corresponding to a logical disjunction between a first value of first data in the first magnetoresistive effect element and a second value of the first control voltage corresponding to second data.
Abstract:
According to one embodiment, a nonvolatile memory includes a conductive line including a first portion, a second portion and a third portion therebetween, a storage element including a first magnetic layer, a second magnetic layer and a nonmagnetic layer therebetween, and the first magnetic layer being connected to the third portion, and a circuit flowing a write current between the first and second portions, applying a first potential to the second magnetic layer, and blocking the write current flowing between the first and second portions after changing the second magnetic layer from the first potential to a second potential.
Abstract:
According to one embodiment, a magnetic memory device includes a conductive member, a first element portion, and a controller. The conductive member includes a first portion, a second portion, and a third portion between the first portion and the second portion. The first element portion includes a first element, a first interconnect, and a first circuit. The first element includes a first magnetic layer, a first counter magnetic layer, and a first nonmagnetic layer. The first counter magnetic layer is provided between the third portion and the first magnetic layer. The first nonmagnetic layer is provided between the first counter magnetic layer and the first magnetic layer. The first interconnect is electrically connected to the first magnetic layer. The first circuit is electrically connected to the first interconnect. The first circuit includes a first switch, a first capacitance element, a first parallel switch, and a first parallel capacitance element.
Abstract:
According to one embodiment, a magnetic memory includes: magnetoresistive effect elements arranged on an conductive layer; and a first circuit which passes a write current through the conductive layer and applies a control voltage to the magnetoresistive effect elements, to write data including a first value and a second value into the magnetoresistive effect elements. The first circuit adjusts at least one of a write sequence of the first value and the second value, a current value of the write current, and a pulse width of the write current, on the basis of an arrangement of the first value and the second value in the data.
Abstract:
According to one embodiment, a magnetic recording head includes a magnetic pole, a stacked body, and a first non-magnetic layer. The stacked body includes a first magnetic layer, a second magnetic layer provided between the first magnetic layer and the magnetic pole, and a non-magnetic intermediate layer provided between the first magnetic layer and the second magnetic layer. The first non-magnetic layer is provided between the second magnetic layer and the magnetic pole, and contacts the magnetic pole and the second magnetic layer. The first magnetic layer has a first thickness and a first saturation magnetic flux density. The second magnetic layer has a second thickness and a second saturation magnetic flux density. A second product of the second thickness and the second saturation magnetic flux density is larger than a first product of the first thickness and the first saturation magnetic flux density.
Abstract:
According to one embodiment, a magnetic recording head includes a main pole configured to apply a recording magnetic field to a recording layer of a recording medium, a trailing shield opposed to the main pole with a write gap therebetween, and a high-frequency oscillator between the main pole and the trailing shield in a range of a width of the main pole in a track width direction, and configured to generate a high-frequency magnetic field. The high-frequency oscillator includes a spin injection layer, an intermediate layer, and an oscillation layer, and at least the oscillation layer comprises divided oscillation regions.
Abstract:
According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The conductive layer includes first and second regions, and a third region between the first region and the second region. The second magnetic layer is provided between the third region and the first magnetic layer in a first direction crossing a second direction. The second direction is from the first region toward the second region. The first nonmagnetic layer is provided between the first and second magnetic layers. The second region includes first to third conductive portions. A direction from the first conductive portion toward the second conductive portion is aligned with a third direction. The third direction crosses a plane including the first and second directions. The third conductive portion is between the first and second conductive portions in the third direction.
Abstract:
According to one embodiment, a magnetic recording head includes a magnetic pole, a stacked body, and a first nonmagnetic layer. The stacked body includes first magnetic layer, a second magnetic layer provided between the first magnetic layer and the magnetic pole, and an intermediate layer provided between the first magnetic layer and the second magnetic layer and being nonmagnetic. The first nonmagnetic layer is provided between the second magnetic layer and the magnetic pole. A product of a thickness and a saturation magnetic flux density of the second magnetic layer is larger than a product of a thickness and a saturation magnetic flux density of the first magnetic layer. The length of the first magnetic layer is shorter than a length of the second magnetic layer. A current flows from the second magnetic layer toward the first magnetic layer.
Abstract:
According to one embodiment, a magnetic recording head includes a main pole configured to apply a recording magnetic field to a recording layer of a recording medium, a trailing shield opposed to the main pole with a write gap therebetween, and a high-frequency oscillator between the main pole and the trailing shield in a range of a width of the main pole in a track width direction, and configured to generate a high-frequency magnetic field. The high-frequency oscillator includes a spin injection layer, an intermediate layer, and an oscillation layer, and at least the oscillation layer comprises divided oscillation regions.
Abstract:
A magnetic head includes a plurality of reproducing elements so that the magnetic head can acquire reproduction signals from a plurality of tracks at the same time. The magnetic head includes a first reproducing element, a first magnetic film formed on a first side wall of the first reproducing element with a first side wall insulating film interposed therebetween, a second magnetic film formed on a second side wall of the first reproducing element with a second side wall insulating film interposed therebetween, a second reproducing element electrically isolated from the first reproducing element and formed on the first magnetic film, a third magnetic film formed on the first magnetic film, and a fourth magnetic film formed on the first reproducing element and electrically isolated from the second reproducing element.