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公开(公告)号：US11990467B2
公开(公告)日：2024-05-21
申请号：US17931902
申请日：2022-09-14
发明人： Shekar Mallikarjunaswamy , Ning Shi
IPC分类号： H01L27/02 , H01L23/535 , H01L29/06 , H01L29/861 , H01L29/866 , H01L29/87
CPC分类号： H01L27/0262 , H01L23/535 , H01L27/0255 , H01L29/0649 , H01L29/8611 , H01L29/866 , H01L29/87
摘要： A bidirectional transient voltage suppressor (TVS) protection circuit includes two sets of steering diodes, a clamp circuit including an MOS transistor integrated with a silicon controlled rectifier (SCR) and a trigger circuit. In response to a voltage applied to one of the protected nodes exceeding a first voltage level, the trigger circuit drives the MOS transistor to cause a current flow at the SCR to trigger an SCR action and the SCR clamps the voltage at the respective protected node at a clamping voltage. In other embodiments, a bidirectional transient voltage suppressor (TVS) protection circuit includes two sets of steering diodes with a clamp device merged with a steering diode in each set. In some embodiments, the TVS protection circuit realizes low capacitance at the protected nodes by fully or almost completely depleting the P-N junction connected to the protected nodes in the operating voltage range.
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公开(公告)号：US11961834B2
公开(公告)日：2024-04-16
申请号：US17699471
申请日：2022-03-21
发明人： Po-Lin Peng , Li-Wei Chu , Ming-Fu Tsai , Jam-Wem Lee , Yu-Ti Su
IPC分类号： H01L27/02 , H01L27/06 , H01L29/86 , H01L29/87 , H01L23/60 , H01L23/62 , H01L29/08 , H01L29/10 , H01L29/747 , H01L29/861
CPC分类号： H01L27/0262 , H01L27/0207 , H01L27/0255 , H01L29/87 , H01L23/60 , H01L23/62 , H01L27/0248 , H01L27/0652 , H01L27/0658 , H01L29/0804 , H01L29/0821 , H01L29/1004 , H01L29/747 , H01L29/8611 , H01L2924/13034 , H01L2924/13035
摘要： A semiconductor device includes a first diode, a second diode, a clamp circuit and a third diode. The first diode is coupled between an input/output (I/O) pad and a first voltage terminal. The second diode is coupled with the first diode, the I/O pad and a second voltage terminal. The clamp circuit is coupled between the first voltage terminal and the second voltage terminal. The second diode and the clamp circuit are configured to direct a first part of an electrostatic discharge (ESD) current flowing between the I/O pad and the first voltage terminal. The third diode, coupled to the first voltage terminal, and the second diode include a first semiconductor structure configured to direct a second part of the ESD current flowing between the I/O pad and the first voltage terminal.
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3.发明公开公开(公告)号：US20240079408A1
公开(公告)日：2024-03-07
申请号：US18508015
申请日：2023-11-13
发明人： Yi-Feng CHANG , Po-Lin PENG , Jam-Wem LEE
IPC分类号： H01L27/092 , H01L21/8238 , H01L27/02 , H01L29/06 , H01L29/10 , H01L29/87
CPC分类号： H01L27/0921 , H01L21/823871 , H01L27/0262 , H01L29/0649 , H01L29/1083 , H01L29/87
摘要： A method includes the following operations: disconnecting at least one of drain regions that are formed on a first active area, of first transistors, from a first voltage; and disconnecting at least one of drain regions that are formed on a second active area, of second transistors coupled to the first transistors from a second voltage. The at least one of drain regions of the second transistors corresponds to the at least one of drain regions of the first transistors.
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公开(公告)号：US11804555B2
公开(公告)日：2023-10-31
申请号：US17288916
申请日：2019-01-29
发明人： Kohei Ebihara , Shiro Hino , Kosuke Miyazaki , Yasushi Takaki
IPC分类号： H01L29/87 , H01L29/872 , H01L29/16 , H01L29/78 , H02M7/5387
CPC分类号： H01L29/872 , H01L29/1608 , H01L29/7802 , H02M7/53871
摘要： The present invention relates to a semiconductor device, wherein the semiconductor substrate includes: a semiconductor layer; and a well region, the semiconductor device includes: a surface electrode provided on a second main surface on a side opposite to a first main surface; a back surface electrode provided on the first main surface; and an upper surface film covering an end edge portion of the surface electrode and at least part of an outer side region outside an end surface of the surface electrode of the semiconductor substrate, the well region includes a portion extending to the outer side region and a portion extending to an inner side region inside the end surface of the surface electrode, and the upper surface film includes at least one outer peripheral opening part provided along an outer periphery of the surface electrode away from the surface electrode of the outer side region.
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公开(公告)号：US20230050292A1
公开(公告)日：2023-02-16
申请号：US17931902
申请日：2022-09-14
发明人： Shekar Mallikarjunaswamy , Ning Shi
IPC分类号： H01L27/02 , H01L29/06 , H01L29/866 , H01L23/535 , H01L29/861 , H01L29/87
摘要： A bidirectional transient voltage suppressor (TVS) protection circuit includes two sets of steering diodes, a clamp circuit including an MOS transistor integrated with a silicon controlled rectifier (SCR) and a trigger circuit. In response to a voltage applied to one of the protected nodes exceeding a first voltage level, the trigger circuit drives the MOS transistor to cause a current flow at the SCR to trigger an SCR action and the SCR clamps the voltage at the respective protected node at a clamping voltage. In other embodiments, a bidirectional transient voltage suppressor (TVS) protection circuit includes two sets of steering diodes with a clamp device merged with a steering diode in each set. In some embodiments, the TVS protection circuit realizes low capacitance at the protected nodes by fully or almost completely depleting the P-N junction connected to the protected nodes in the operating voltage range.
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公开(公告)号：US11444077B2
公开(公告)日：2022-09-13
申请号：US16696045
申请日：2019-11-26
摘要： A semiconductor device includes a thyristor disposed in a semiconductor body. The thyristor has an anode, a cathode, a first bipolar transistor located on an anode side, and a second bipolar transistor located on a cathode side. The first and second bipolar transistors are nested and connected between the anode and the cathode. A MOS transistor is disposed in the semiconductor body. The MOS transistor is coupled between a collector region and an emitter region of the second bipolar transistor. The MOS transistor has a gate region connected to the cathode via a resistive semiconductor region that incorporates at least a part of a base region of the second bipolar transistor.
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公开(公告)号：US20220262960A1
公开(公告)日：2022-08-18
申请号：US17666942
申请日：2022-02-08
IPC分类号： H01L29/87 , H01L31/102
摘要： A power semiconductor component for voltage limiting includes a rear-side base zone electrically contacted with a rear-side electrode and a front-side base zone electrically contacted with a front-side electrode. At least one switch-on structure is embedded at least into one of the rear-side base zone and the front-side base zone and is electrically contacted by the electrode contacting the embedding base zone. At least one triggering structure is provided as a breakdown structure of a first type, present between the front-side and rear-side electrodes. At least one further triggering structure is provided as a breakdown structure of a second type, present between the front-side and rear-side electrodes. The front-side and rear-side electrodes are each electrically conductively pressure-contacted by an electrically conductive contact plate at least one of which functions as a heat sink for dissipating heat generated in the semiconductor body.
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公开(公告)号：US11329040B2
公开(公告)日：2022-05-10
申请号：US16359431
申请日：2019-03-20
发明人： Patrick Poveda
IPC分类号： H02H9/00 , H01L27/02 , H01L29/87 , H01L29/66 , H01L23/60 , H01L29/78 , H01L29/788 , H01L23/522 , H01L23/528 , H01L27/06 , H01L29/06 , H01L29/866 , H02H9/04 , H03H11/04
摘要： An electronic component includes first and second separate semiconductor regions. A third semiconductor region is arranged under and between the first and second semiconductor regions. The first and third semiconductor regions define electrodes of a first diode. The second and third semiconductor regions define electrodes of a second diode. The first diode is an avalanche diode.
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公开(公告)号：US20220130825A1
公开(公告)日：2022-04-28
申请号：US17570909
申请日：2022-01-07
发明人： Yi-Feng CHANG , Po-Lin PENG , Jam-Wem LEE
IPC分类号： H01L27/092 , H01L29/10 , H01L27/02 , H01L21/8238 , H01L29/06 , H01L29/87
摘要： A method includes the following operations: disconnecting at least one of drain regions that are formed on a first active area, of first transistors, from a first voltage; and disconnecting at least one of drain regions that are formed on a second active area, of second transistors coupled to the first transistors from a second voltage. The at least one of drain regions of the second transistors corresponds to the at least one of drain regions of the first transistors.
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公开(公告)号：US11222888B2
公开(公告)日：2022-01-11
申请号：US16980368
申请日：2019-03-05
发明人： Jun Sun
摘要： An anti-static metal oxide semiconductor field effect transistor structure includes an anti-static body structure and a slave metal oxide semiconductor field effect transistor, the anti-static body structure includes: a main metal oxide semiconductor field effect transistor; a first silicon controlled rectifier, an anode thereof being connected to a drain of the main metal oxide semiconductor field effect transistor, a cathode and a control electrode thereof being connected to a source of the main metal oxide semiconductor field effect transistor; and a second silicon controlled rectifier, an anode thereof being connected to the drain of the main metal oxide semiconductor field effect transistor, a cathode thereof being connected to a gate of the main metal oxide semiconductor field effect transistor, a control electrode thereof being connected to the source or the gate of the main metal oxide semiconductor field effect transistor.
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