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公开(公告)号：US20220416019A1
公开(公告)日：2022-12-29
申请号：US17841871
申请日：2022-06-16
IPC分类号： H01L29/06 , H01L21/67 , H01L21/306
摘要： A method for producing an edge structure of a semiconductor component includes: providing a semiconductor body having at least two mutually spaced-apart main faces respectively having an edge, between which edges an edge face extends; and etching a predetermined edge contour by purposely applying a chemical etchant onto the edge face by an etchant jet with simultaneous rotation of the semiconductor body about a rotation axis. The etchant jet is guided with a predetermined jet cross section, while being directed tangentially with respect to the edge face, such that the etchant jet impinges on the edge face only with a part of the jet cross section. A corresponding device for producing an edge structure of a semiconductor component is also described.
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公开(公告)号：US11646365B2
公开(公告)日：2023-05-09
申请号：US16965432
申请日：2019-01-23
发明人： Uwe Kellner-Werdehausen , Michael Stelte , Markus Droldner , Dirk Pikorz , Peter Weidner , Reiner Barthelmess , Mario Schenk , Jens Przybilla
IPC分类号： H01L29/74 , H01L23/62 , H01L27/02 , H01L29/423
CPC分类号： H01L29/7428 , H01L23/62 , H01L27/0248 , H01L29/42308 , H01L29/7424
摘要： A short-circuit semiconductor component comprises a semiconductor body, in which a rear-side base region of a first conduction type, an inner region of a second conduction type complementary to the first conduction type, and a front-side base region of the first conduction type are disposed. The rear-side base region is electrically connected to a rear-side electrode with a rear-side electrode width, and the front-side base region is electrically connected to a front-side electrode with a front-side electrode width. A turn-on structure with a turn-on structure width is embedded into the front-side and/or rear-side base region and is covered by the respective electrode. The turn-on structure is configured to be turned on depending on a supplied turn-on signal and to produce, on a one-off basis, an irreversible, low-resistance connection between the two electrodes. The ratio of the turn-on structure width to the respective electrode width is less than 1.
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公开(公告)号：US20220262960A1
公开(公告)日：2022-08-18
申请号：US17666942
申请日：2022-02-08
IPC分类号： H01L29/87 , H01L31/102
摘要： A power semiconductor component for voltage limiting includes a rear-side base zone electrically contacted with a rear-side electrode and a front-side base zone electrically contacted with a front-side electrode. At least one switch-on structure is embedded at least into one of the rear-side base zone and the front-side base zone and is electrically contacted by the electrode contacting the embedding base zone. At least one triggering structure is provided as a breakdown structure of a first type, present between the front-side and rear-side electrodes. At least one further triggering structure is provided as a breakdown structure of a second type, present between the front-side and rear-side electrodes. The front-side and rear-side electrodes are each electrically conductively pressure-contacted by an electrically conductive contact plate at least one of which functions as a heat sink for dissipating heat generated in the semiconductor body.
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公开(公告)号：US11973147B2
公开(公告)日：2024-04-30
申请号：US17666942
申请日：2022-02-08
IPC分类号： H01L29/87 , H01L31/102
CPC分类号： H01L29/87 , H01L31/102
摘要： A power semiconductor component for voltage limiting includes a rear-side base zone electrically contacted with a rear-side electrode and a front-side base zone electrically contacted with a front-side electrode. At least one switch-on structure is embedded at least into one of the rear-side base zone and the front-side base zone and is electrically contacted by the electrode contacting the embedding base zone. At least one triggering structure is provided as a breakdown structure of a first type, present between the front-side and rear-side electrodes. At least one further triggering structure is provided as a breakdown structure of a second type, present between the front-side and rear-side electrodes. The front-side and rear-side electrodes are each electrically conductively pressure-contacted by an electrically conductive contact plate at least one of which functions as a heat sink for dissipating heat generated in the semiconductor body.
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公开(公告)号：US11664445B2
公开(公告)日：2023-05-30
申请号：US16912029
申请日：2020-06-25
发明人： Mario Schenk , Reiner Barthelmess , Peter Weidner , Dirk Pikorz , Markus Droldner , Michael Stelte , Harald Nübel , Uwe Kellner-Werdehausen , Christof Drilling , Jens Przybilla
IPC分类号： H01L29/74 , H01L29/749 , H01L29/08 , H02H9/04 , H01L29/417
CPC分类号： H01L29/7424 , H01L29/0839 , H01L29/74 , H01L29/749 , H01L29/7412 , H02H9/041 , H01L29/41716
摘要： A short-circuit semiconductor component comprises a semiconductor body, in which a rear-side base region of a first conduction type, an inner region of a second complementary conduction type, and a front-side base region of the first conduction type are disposed. The rear-side base region is electrically connected to a rear-side electrode, and the front-side base region is electrically connected to a front-side electrode. A turn-on structure, which is an emitter structure of the second conduction type, is embedded into the front-side base region and/or rear-side base region and is covered by the respective electrode and is electrically contacted with the electrode placed on the base region respectively embedding it. It can be turned on by a trigger structure which can be activated by an electrical turn-on signal. In the activated state, the trigger structure injects an electrical current surge into the semiconductor body, which irreversibly destroys a semiconductor junction.
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公开(公告)号：US10008486B2
公开(公告)日：2018-06-26
申请号：US15121773
申请日：2015-02-17
发明人： Mario Schenk , Jens Przybilla , Reiner Barthelmess , Joerg Dorn
IPC分类号： H01L23/34 , H01L25/11 , H01L25/07 , H01L23/40 , H01L23/32 , H01L23/367 , H01L23/473 , H01L23/00 , H01L23/051
CPC分类号： H01L25/115 , H01L23/051 , H01L23/32 , H01L23/3675 , H01L23/4006 , H01L23/473 , H01L24/72 , H01L25/072 , H01L2924/1203 , H01L2924/1301 , H01L2924/13055 , H01L2924/00
摘要： A disk cell for pressure contacting a plurality of semiconductor components via a clamping device to generate a clamping force. The disk cell includes a housing comprising at least one metallic pressure plate, a first semiconductor component arranged in the housing, and a second semiconductor component arranged in the housing. The first and second semiconductor components are different. The at least one metallic pressure plate reaches across and clamps the first and second semiconductor components, is substantially perpendicular to the clamping force, and is arranged so that the clamping force acts on the at least one metallic pressure plate to provide a local region of influence to clamp the first and second semiconductor components. The first semiconductor component is arranged below the local region of influence of the clamping force. The second semiconductor component is at least partially arranged outside the local region of influence of the clamping force.
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公开(公告)号：US20140327114A1
公开(公告)日：2014-11-06
申请号：US14361376
申请日：2012-09-06
发明人： Reiner Barthelmess , Hans-Joachim Schulze , Uwe Kellner-Werdehausen , Josef Lutz , Thomas Basler
IPC分类号： H01L29/06 , H01L29/861 , H01L29/36
CPC分类号： H01L29/0657 , H01L29/0623 , H01L29/0661 , H01L29/36 , H01L29/861
摘要： A semiconductor component includes a two-sided semiconductor body, an inner zone with a basic doping of a first conduction type, and two semiconductor zones. The first zone, disposed between the first side and inner zone, is of the first conduction type with a doping concentration higher than that of the inner zone. The second zone, disposed between the second side and inner zone, is of a second conduction type complementary to the first type with a doping concentration higher than that of the inner zone.At least one first edge chamfer extends at a first angle to the extension plane of the transition from the second zone to the inner zone at least along the edge of the second zone and inner zone.At least one buried zone of the second conduction type is provided between the first zone and inner zone, and extends substantially parallel to the first zone.
摘要翻译： 半导体部件包括双面半导体本体，具有第一导电类型的基本掺杂的内部区域和两个半导体区域。 设置在第一侧面和内部区域之间的第一区域是具有比内部区域高的掺杂浓度的第一导电类型。 设置在第二侧面和内部区域之间的第二区域具有与第一类型互补的第二导电类型，其掺杂浓度高于内部区域的掺杂浓度。 至少一个第一边缘倒角至少沿着第二区域和内部区域的边缘以第一角度延伸到从第二区域到内部区域的过渡的延伸平面。 第二导电类型的至少一个埋置区域设置在第一区域和内部区域之间，并且基本平行于第一区域延伸。
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