公开(公告)号：US12027611B2

公开(公告)日：2024-07-02

申请号：US17470692

申请日：2021-09-09

申请人： Kabushiki Kaisha Toshiba ,  Toshiba Electronic Devices & Storage Corporation

发明人： Yoko Iwakaji ,  Tomoko Matsudai

IPC分类号： H01L29/739 ,  H01L29/86 ,  H01L29/861

CPC分类号： H01L29/7397 ,  H01L29/861

摘要： A semiconductor device includes: a first electrode; a first semiconductor layer located on the first electrode in a diode region; a second semiconductor layer located on the first electrode in an IGBT region; a third semiconductor layer located in the diode region, the boundary region, and the IGBT region and positioned on the first semiconductor layer and the second semiconductor layer; a fourth semiconductor layer located on the third semiconductor layer in the boundary region and the IGBT region; a fifth semiconductor layer located on the third semiconductor layer and the fourth semiconductor layer; a second electrode located in the diode region; a third electrode located in the IGBT region; and a fourth electrode extending from an upper surface of the fifth semiconductor layer toward the third semiconductor layer in the boundary region and electrically insulated from the third electrode.

公开(公告)号：US12002890B2

公开(公告)日：2024-06-04

申请号：US17585284

申请日：2022-01-26

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jaehyun Yoo ,  Kyuok Lee ,  Uihui Kwon ,  Junhyeok Kim ,  Yongwoo Jeon ,  Dawon Jeong ,  Jaehyok Ko

IPC分类号： H01L29/86 ,  H01L29/06 ,  H01L29/40 ,  H01L29/861

CPC分类号： H01L29/861 ,  H01L29/0634 ,  H01L29/404 ,  H01L29/0649

摘要： A semiconductor protection device includes: an N-type epitaxial layer, a device isolation layer disposed in the N-type epitaxial layer, an N-type drift region disposed below the device isolation layer, an N-type well disposed in the N-type drift region, first and second P-type drift regions, respectively disposed to be in contact with the device isolation layer, and spaced apart from the N-type drift region, first and second P-type doped regions, respectively disposed in the first and second P-type drift regions, first and second N-type floating wells, respectively disposed in the first and second P-type drift regions to be spaced apart from the first and second P-type doped regions, and disposed to be in contact with the device isolation layer, and first and second contact layer, respectively disposed to cover the first and second N-type floating well, to be in contact with the device isolation layer.

公开(公告)号：US11984514B2

公开(公告)日：2024-05-14

申请号：US18324638

申请日：2023-05-26

申请人： Samsung Electronics Co., Ltd.

发明人： Jinseong Heo ,  Taehwan Moon ,  Hagyoul Bae ,  Seunggeol Nam ,  Sangwook Kim ,  Kwanghee Lee

IPC分类号： H01L29/86 ,  H10B69/00 ,  H10K10/50 ,  H10K19/00

CPC分类号： H01L29/86 ,  H10B69/00 ,  H10K10/50 ,  H10K19/00 ,  H10K19/201

摘要： A semiconductor apparatus includes a plurality of semiconductor devices. The semiconductor devices each include a ferroelectric layer, a conductive metal oxide layer, and a semiconductor layer, between two electrodes. The conductive metal oxide layer may be between the ferroelectric layer and the semiconductor layer. The ferroelectric layer, the conductive metal oxide layer, and the semiconductor layer may all include a metal oxide. The conductive metal oxide layer may include one or more materials selected from the group consisting of an indium oxide, a zinc oxide, a tin oxide, and any combination thereof.

公开(公告)号：US11973146B2

公开(公告)日：2024-04-30

申请号：US17771134

申请日：2020-10-27

申请人： KABUSHIKI KAISHA TOKAI-RIKA-DENKI-SEISAKUSHO

发明人： Kengo Shima ,  Yoshikazu Kataoka ,  Kazuya Adachi ,  Yuto Hakamata

IPC分类号： H01L29/86 ,  H01L27/12 ,  H01L29/06 ,  H01L29/78 ,  H01L29/786 ,  H01L29/861

CPC分类号： H01L29/8611 ,  H01L27/1203 ,  H01L29/0657 ,  H01L29/7838 ,  H01L29/78603

摘要： A semiconductor integrated circuit including: a substrate of a first conductivity type; a buried insulating film provided on the substrate; an active layer of the first conductivity type provided on the buried insulating film; a first impurity region of a second conductivity type formed within the active layer; an electric field relaxation layer of the second conductivity type formed within the active layer and surrounding the first impurity region; a second impurity region of the first conductivity type formed within the active layer and surrounding the electric field relaxation layer; and a groove formed surrounding the second impurity region and reaching the buried insulating film.

公开(公告)号：US20240128189A1

公开(公告)日：2024-04-18

申请号：US17968707

申请日：2022-10-18

申请人： Micron Technology, Inc.

发明人： Christopher G. Wieduwilt ,  James S. Rehmeyer

IPC分类号： H01L23/528 ,  H01L27/112 ,  H01L29/86

CPC分类号： H01L23/528 ,  H01L27/11206 ,  H01L29/86 ,  H01L23/53209

摘要： An antifuse device, including a gate having a gate dielectric layer; a first doping region connected to a first end of the gate; a second doping region connected to a second end of the gate, the second end being opposite to the first end of the gate; a channel that is disposed under the gate and that connects the first doping region and the second doping region; and an interconnection jumper that electrically connects the first doping region and the second doping region.

公开(公告)号：US11251307B2

公开(公告)日：2022-02-15

申请号：US16120705

申请日：2018-09-04

申请人： Samsung Electronics Co., Ltd.

发明人： Tae-jin Park ,  Jin-bum Kim ,  Bong-soo Kim ,  Kyu-pil Lee ,  Hyeong-sun Hong ,  Yoo-sang Hwang

IPC分类号： H01L29/786 ,  H01L29/778 ,  H01L29/88 ,  H01L21/02 ,  H01L29/06 ,  H01L29/16 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  H01L29/86 ,  H01L29/24

摘要： A device includes a substrate, a first electrode on the substrate, an insulating pattern on the substrate, a second electrode on an upper end of the insulating pattern, a two-dimensional (2D) material layer on a side surface of the insulating pattern, a gate insulating layer covering the 2D material layer, and a gate electrode contacting the gate insulting layer. The insulating pattern extends from the first electrode in a direction substantially vertical to the substrate. The 2D material layer includes at least one atomic layer of a 2D material that is substantially parallel to the side surface of the insulating pattern.

公开(公告)号：US11069770B2

公开(公告)日：2021-07-20

申请号：US16450351

申请日：2019-06-24

申请人： Power Semiconductor

发明人： Hamza Yilmaz

IPC分类号： H01L29/06 ,  H01L29/66 ,  H01L29/86 ,  H01L29/73 ,  H01L29/861 ,  H01L29/739

摘要： Semiconductor devices and methods of fabrication are provided. The semiconductor device includes a Charge Injection Controlled (CIC) Fast Recovery Diode (FRD) to control charge injection by lowering carrier storage. The device can have a first conductivity type semiconductor substrate, and a drift region that includes a doped buffer region, a doped middle region and a doped field stop region or carrier storage region. The device can also include a second conductivity type shield region including a deep junction encircling (or substantially laterally beneath) the buffer region and a second conductivity type shallow junction anode region in electrical contact with a second conductivity type anode electrode. The deep junction can have a range of doping concentrations surrounding the buffer regions to deplete buffer charge laterally as well as vertically to prevent premature device breakdown. The first conductivity type may be N type and the second conductivity type may be P type.

公开(公告)号：US10790461B2

公开(公告)日：2020-09-29

申请号：US16462447

申请日：2017-11-16

申请人： TORAY INDUSTRIES, INC.

发明人： Daisuke Sakii ,  Seiichiro Murase ,  Junji Wakita

IPC分类号： H01L29/86 ,  H01L51/05 ,  G06K19/07 ,  H01L51/00 ,  H01L51/10

摘要： A field-effect transistor includes: a substrate; a source electrode; a drain electrode; a gate electrode; a semiconductor layer in contact with the source electrode and with the drain electrode; and a gate insulating layer insulating between the semiconductor layer and the gate electrode. The gate insulating layer comprising at least a polysiloxane having a structural unit represented by a general formula (1): in the general formula (1), R1 represents a hydrogen atom, an alkyl group, a cycloalkyl group, a heterocyclic group, an aryl group, a heteroaryl group, or an alkenyl group; R2 represents a hydrogen atom, an alkyl group, a cycloalkyl group, or a silyl group; m represents 0 or 1; A1 represents an organic group including at least two groups selected from a carboxy group, a sulfo group, a thiol group, a phenolic hydroxy group, or a derivative of these groups.

公开(公告)号：US10444275B2

公开(公告)日：2019-10-15

申请号：US15833331

申请日：2017-12-06

申请人： Renesas Electronics Corporation

发明人： Kenji Takeuchi

IPC分类号： G01R31/02 ,  H01L29/86 ,  G01R31/26 ,  H01L29/739 ,  H01L29/66 ,  H01L29/10 ,  H01L29/423 ,  H01L29/06 ,  G01R1/20

摘要： There are provided an electric-current sensing device capable of detecting an electric current with high accuracy, a load driving system, and a method for manufacturing the electric-current sensing device. According to one embodiment, the electric-current sensing device includes a sense IGBT through which an electric current proportional to an electric current flowing through a main IGBT flows. Further, a depth of a P type floating region from a lower end of each of a plurality of trench gates provided in the sense IGBT is shallower than a depth of another P type floating region from a lower end of each of a plurality of trench gates provided in the main IGBT.

公开(公告)号：US10355116B2

公开(公告)日：2019-07-16

申请号：US15926131

申请日：2018-03-20

申请人： Infineon Technologies Austria AG

发明人： Markus Bina ,  Thomas Basler ,  Matteo Dainese ,  Hans-Joachim Schulze

IPC分类号： H01L29/66 ,  H01L29/74 ,  H01L29/73 ,  H01L29/08 ,  H01L29/10 ,  H01L29/32 ,  H01L29/80 ,  H01L29/86 ,  H01L27/02 ,  H01L27/07 ,  H01L29/739 ,  H01L29/04 ,  H01L29/423 ,  H01L29/808 ,  H01L29/861 ,  H01L29/36 ,  H01L29/16

摘要： A power semiconductor device includes: a semiconductor body coupled to a first load terminal and a second load terminal, and includes: a first doped region of a second conductivity type electrically connected to the first load terminal; a recombination zone arranged at least within the first doped region; an emitter region of the second conductivity type electrically connected to the second load terminal; and a drift region of a first conductivity type arranged between the first doped region and the emitter region. The drift region and the first doped region enable the power semiconductor device to operate in: a conducting state during which a load current between the load terminals is conducted along a forward direction; in a forward blocking state during which a forward voltage applied between the load terminals is blocked; and in a reverse blocking state during which a reverse voltage applied between the terminals is blocked.