Ion milling device
    1.
    发明授权

    公开(公告)号:US12230471B2

    公开(公告)日:2025-02-18

    申请号:US17788556

    申请日:2019-12-24

    Abstract: There is provided an ion milling apparatus that can enhance reproducibility of ion distribution.
    The ion milling apparatus includes an ion source 101, a sample stage 102 on which a sample processed by radiating a non-convergent ion beam from the ion source 101 is placed, a drive unit 107 that moves a measurement member holding section 106 holding an ion beam current measurement member 105 along a track located between the ion source and the sample stage, and an electrode 112 that is disposed near the track, in which a predetermined positive voltage is applied to the electrode 112, the ion beam current measurement member 105 is moved within a radiation range of the ion beam by the drive unit 107, in a state in which the ion beam is output from the ion source 101 under a first radiation condition, and an ion beam current that flows when the ion beam is radiated to the ion beam current measurement member 105 is measured.

    OPERATING A PARTICLE BEAM APPARATUS
    5.
    发明公开

    公开(公告)号:US20240274397A1

    公开(公告)日:2024-08-15

    申请号:US18509372

    申请日:2023-11-15

    CPC classification number: H01J37/1474 H01J37/3023 H01J37/3053

    Abstract: Operating a particle beam apparatus includes processing, imaging, and/or analyzing an object. When guiding the particle beam along first dwell regions of a first scan line, the particle beam remains at each of the first dwell regions for a first dwell time. When guiding the particle beam along second dwell regions of a second scan line, the particle beam remains at each of the second dwell regions for a second dwell time. The first dwell time is shorter than the second dwell time. Alternatively, a first region of the first dwell regions has a first spacing with respect to a closest arranged adjacent second region of the first dwell regions. A first region of the second dwell regions has a second spacing with respect to a closest arranged adjacent second region of the second dwell regions. The second spacing is smaller than the first spacing.

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