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公开(公告)号：US11670482B2
公开(公告)日：2023-06-06
申请号：US17037935
申请日：2020-09-30
IPC分类号： H01J37/305 , H01J37/12 , G02B6/136 , H01J37/147 , H01J37/20 , G02B6/12
CPC分类号： H01J37/3053 , G02B6/136 , H01J37/12 , H01J37/1478 , H01J37/20 , H01J37/3056 , G02B2006/12107 , H01J2237/1507 , H01J2237/3174
摘要： Embodiments described herein relate to methods and apparatus for forming gratings having a plurality of fins with different slant angles on a substrate and forming fins with different slant angles on successive substrates using angled etch systems and/or an optical device. The methods include positioning portions of substrates retained on a platen in a path of an ion beam. The substrates have a grating material disposed thereon. The ion beam is configured to contact the grating material at an ion beam angle ϑ relative to a surface normal of the substrates and form gratings in the grating material.
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公开(公告)号：US11512385B2
公开(公告)日：2022-11-29
申请号：US16715906
申请日：2019-12-16
摘要： Embodiments of the disclosure generally relate to methods of forming gratings. The method includes depositing a resist material on a grating material disposed over a substrate, patterning the resist material into a resist layer, projecting a first ion beam to the first device area to form a first plurality of gratings, and projecting a second ion beam to the second device area to form a second plurality of gratings. Using a patterned resist layer allows for projecting an ion beam over a large area, which is often easier than focusing the ion beam in a specific area.
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公开(公告)号：US11480724B2
公开(公告)日：2022-10-25
申请号：US17257767
申请日：2019-07-01
摘要： An apparatus with a grating structure and a method for forming the same are disclosed. The grating structure includes forming a recess in a grating layer. A plurality of channels is formed in the grating layer to define slanted grating structures therein. The recess and the slanted grating structures are formed using a selective etch process.
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公开(公告)号：US11195703B2
公开(公告)日：2021-12-07
申请号：US16682888
申请日：2019-11-13
发明人： Peter F. Kurunczi , Morgan Evans , Joseph C. Olson
IPC分类号： H01J37/32 , G02B5/18 , H01J37/147
摘要： A plasma source may include a plasma chamber, where the plasma chamber has a first side, defining a first plane and an extraction assembly, disposed adjacent to the side of the plasma chamber, where the extraction assembly includes at least two electrodes. A first electrode may be disposed immediately adjacent the side of the plasma chamber, wherein a second electrode defines a vertical displacement from the first electrode along a first direction, perpendicular to the first plane, wherein the first electrode comprises a first aperture, and the second electrode comprises a second aperture. The first aperture may define a lateral displacement from the second aperture along a second direction, parallel to the first plane, wherein the vertical displacement and the lateral displacement define a non-zero angle of inclination with respect to a perpendicular to the first plane.
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公开(公告)号：US11119405B2
公开(公告)日：2021-09-14
申请号：US16159059
申请日：2018-10-12
IPC分类号： G03F7/09 , G03F7/11 , H01L21/3213 , G03F1/80 , G03F7/20
摘要： A method of forming angled structures in a substrate. The method may include the operation of forming a mask by etching angled mask features in a mask layer, disposed on a substrate base of the substrate, the angled mask features having sidewalls, oriented at a non-zero angle of inclination with respect to perpendicular to a main surface of the substrate. The method may include etching the substrate with the mask in place, the etching comprising directing ions having trajectories arranged at a non-zero angle of incidence with respect to a perpendicular to the main surface.
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公开(公告)号：US20210257179A1
公开(公告)日：2021-08-19
申请号：US16789591
申请日：2020-02-13
发明人： Joseph C. Olson , Morgan Evans , Thomas Soldi , Rutger Meyer Timmerman Thijssen , Maurice Emerson Peploski
IPC分类号： H01J37/08 , H01J37/305 , H01J37/20 , H01J29/07
摘要： Methods of producing grating materials with variable height are provided. In one example, a method may include providing a grating material atop a substrate, and positioning a shadow mask between the grating material and an ion source, wherein the shadow mask is separated from the grating material by a distance. The method may further include etching the grating material using an ion beam passing through a set of openings of the shadow mask, wherein a first depth of a first portion of the grating material is different than a second depth of a second portion of the grating material.
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公开(公告)号：US11004648B2
公开(公告)日：2021-05-11
申请号：US16290325
申请日：2019-03-01
IPC分类号： H01J37/05 , H01J37/317 , H01J37/147
摘要： Embodiments herein provide systems and methods for multi-area selecting etching. In some embodiments, a system may include a plasma source delivering a plurality of angled ion beams to a substrate, the substrate including a plurality of devices. Each of the plurality of devices may include a first angled grating and a second angled grating. The system may further include a plurality of blocking masks positionable between the plasma source and the substrate. A first blocking mask of the plurality of blocking masks may include a first set of openings permitting the angled ion beams to pass therethrough to form the first angled gratings of each of the plurality of devices. A second blocking mask of the plurality of blocking masks may include a second set of openings permitting the angled ion beams to pass therethrough to form the second angled gratings of each of the plurality of devices.
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8.发明授权公开(公告)号：US12106936B2
公开(公告)日：2024-10-01
申请号：US18214355
申请日：2023-06-26
IPC分类号： H01J37/20 , H01J37/08 , H01J37/305
CPC分类号： H01J37/3053 , H01J37/08 , H01J37/20 , H01J2237/0041 , H01J2237/0822 , H01J2237/20228 , H01J2237/3174
摘要： A system may include a substrate stage, configured to support a substrate, where a main surface of the substrate defines a substrate plane. The system may include an ion source, including an extraction assembly that is oriented to direct an ion beam to the substrate along a trajectory defining a non-zero angle of incidence with respect to a perpendicular to the substrate plane. The system may include a radical source oriented to direct a radical beam to the substrate along a trajectory defining the non-zero angle of incidence with respect to a perpendicular to the substrate plane. The substrate stage may be further configured to scan the substrate along a first direction, lying with the substrate plane, while the main surface of the substrate is oriented within the substrate plane.
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公开(公告)号：US11226441B2
公开(公告)日：2022-01-18
申请号：US17072261
申请日：2020-10-16
摘要： Methods of producing gratings with trenches having variable height are provided. In one example, a method of forming a diffracted optical element may include providing an optical grating layer over a substrate, patterning a hardmask over the optical grating layer, and forming a sacrificial layer over the hardmask, the sacrificial layer having a non-uniform height measured from a top surface of the optical grating layer. The method may further include etching a plurality of angled trenches into the optical grating layer to form an optical grating, wherein a first depth of a first trench of the plurality of trenches is different than a second depth of a second trench of the plurality of trenches.
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公开(公告)号：US11193198B2
公开(公告)日：2021-12-07
申请号：US16706113
申请日：2019-12-06
摘要： Embodiments of the disclosure relate to systems and methods for forming devices on a substrate. For example, a method for forming devices on a substrate can include projecting one or more ion beams from one or more ion beam chambers to form one or more devices on a first surface of a substrate and projecting one or more ion beams from one or more ion beam chambers to form one or more devices on a second surface of a substrate. In these embodiments, the first surface and the second surface are on opposite sides of the substrate. Therefore, the ion beams can form the devices on both sides of the substrate.
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