- 专利标题： Variable height slanted grating method
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申请号： US17257767申请日： 2019-07-01
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公开(公告)号： US11480724B2公开(公告)日： 2022-10-25
- 发明人: Morgan Evans , Rutger Meyer Timmerman Thijssen
- 申请人： Applied Materials, Inc.
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Patterson + Sheridan, LLP
- 国际申请： PCT/US2019/040183 WO 20190701
- 国际公布： WO2020/018270 WO 20200123
- 主分类号： F21V8/00
- IPC分类号： F21V8/00 ; G02B5/18 ; G02B27/01
摘要：
An apparatus with a grating structure and a method for forming the same are disclosed. The grating structure includes forming a recess in a grating layer. A plurality of channels is formed in the grating layer to define slanted grating structures therein. The recess and the slanted grating structures are formed using a selective etch process.
公开/授权文献
- US20210294014A1 VARIABLE HEIGHT SLANTED GRATING METHOD 公开/授权日：2021-09-23
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