-
1.发明授权公开(公告)号：US12106936B2
公开(公告)日：2024-10-01
申请号：US18214355
申请日：2023-06-26
IPC分类号： H01J37/20 , H01J37/08 , H01J37/305
CPC分类号： H01J37/3053 , H01J37/08 , H01J37/20 , H01J2237/0041 , H01J2237/0822 , H01J2237/20228 , H01J2237/3174
摘要： A system may include a substrate stage, configured to support a substrate, where a main surface of the substrate defines a substrate plane. The system may include an ion source, including an extraction assembly that is oriented to direct an ion beam to the substrate along a trajectory defining a non-zero angle of incidence with respect to a perpendicular to the substrate plane. The system may include a radical source oriented to direct a radical beam to the substrate along a trajectory defining the non-zero angle of incidence with respect to a perpendicular to the substrate plane. The substrate stage may be further configured to scan the substrate along a first direction, lying with the substrate plane, while the main surface of the substrate is oriented within the substrate plane.
-
2.发明公开公开(公告)号：US20230335375A1
公开(公告)日：2023-10-19
申请号：US18214355
申请日：2023-06-26
IPC分类号： H01J37/305 , H01J37/20 , H01J37/08
CPC分类号： H01J37/3053 , H01J37/20 , H01J37/08 , H01J2237/3174 , H01J2237/0822 , H01J2237/0041 , H01J2237/20228
摘要： A system may include a substrate stage, configured to support a substrate, where a main surface of the substrate defines a substrate plane. The system may include an ion source, including an extraction assembly that is oriented to direct an ion beam to the substrate along a trajectory defining a non-zero angle of incidence with respect to a perpendicular to the substrate plane. The system may include a radical source oriented to direct a radical beam to the substrate along a trajectory defining the non-zero angle of incidence with respect to a perpendicular to the substrate plane. The substrate stage may be further configured to scan the substrate along a first direction, lying with the substrate plane, while the main surface of the substrate is oriented within the substrate plane.
-
3.发明授权公开(公告)号：US11715621B2
公开(公告)日：2023-08-01
申请号：US16535885
申请日：2019-08-08
IPC分类号： H01J37/30 , H01J37/305 , H01J37/20 , H01J37/08
CPC分类号： H01J37/3053 , H01J37/08 , H01J37/20 , H01J2237/0041 , H01J2237/0822 , H01J2237/20228 , H01J2237/3174
摘要： A system may include a substrate stage, configured to support a substrate, where a main surface of the substrate defines a substrate plane. The system may include an ion source, including an extraction assembly that is oriented to direct an ion beam to the substrate along a trajectory defining a non-zero angle of incidence with respect to a perpendicular to the substrate plane. The system may include a radical source oriented to direct a radical beam to the substrate along a trajectory defining the non-zero angle of incidence with respect to a perpendicular to the substrate plane. The substrate stage may be further configured to scan the substrate along a first direction, lying with the substrate plane, while the main surface of the substrate is oriented within the substrate plane.
-
-
搜索结果
3 条记录 (耗时 0.012 秒)
