公开(公告)号：US20250027227A1

公开(公告)日：2025-01-23

申请号：US18355734

申请日：2023-07-20

Applicant: Winsheng Material Technology Co., Ltd.

Inventor： Yun-Fu Chen ,  Wei-Tse Hsu ,  Min-Sheng Chu ,  Chien-Li Yang ,  Tsu-Hsiang Lin ,  Yuan-Hong Huang

IPC: C30B23/00 ,  C30B23/02 ,  C30B29/36 ,  C30B33/02

Abstract: Provided are a silicon carbide crystal growth device and a quality control method. The device includes: an annealing unit, a crystal growth unit, an atmosphere control unit, and a transport system; the atmosphere control unit provides a gas environment with low water, oxygen and nitrogen; the transport system transports a plurality of target objects after high-temperature purification by the annealing unit to the atmosphere control unit; after assembling silicon carbide seed crystal and silicon carbide powder in a graphite crucible and covering with thermal insulation material to form a container inside the atmosphere control unit, the transport system transports the container to the crystal growth unit. The method uses a weighing system in a chamber of the crystal growth unit to detect a weight change of silicon carbide seed crystal and silicon carbide powder during a crystal growth process through a plurality of weight sensors of the weighing system.

公开(公告)号：US20240410078A1

公开(公告)日：2024-12-12

申请号：US18805150

申请日：2024-08-14

Applicant: Applied Materials, Inc.

Inventor： Zhepeng CONG ,  Nyi Oo MYO ,  Tao SHENG ,  Yong ZHENG

IPC: C30B25/16 ,  B41J2/16 ,  C23C14/50 ,  C23C14/54 ,  C23C16/458 ,  C23C16/46 ,  C23C16/52 ,  C30B23/00 ,  C30B23/06 ,  C30B25/10 ,  C30B25/12 ,  G01B11/06 ,  G01N21/55 ,  H01L21/02 ,  H01L21/66 ,  H01L21/67

Abstract: Embodiments of the present disclosure generally relate to apparatus, systems, and methods for in-situ film growth rate monitoring. A thickness of a film on a substrate is monitored during a substrate processing operation that deposits the film on the substrate. The thickness is monitored while the substrate processing operation is conducted. The monitoring includes directing light in a direction toward a crystalline coupon. The direction is perpendicular to a heating direction. In one implementation, a reflectometer system to monitor film growth during substrate processing operations includes a first block that includes a first inner surface. The reflectometer system includes a light emitter disposed in the first block and oriented toward the first inner surface, and a light receiver disposed in the first block and oriented toward the first inner surface. The reflectometer system includes a second block opposing the first block.

公开(公告)号：US12163250B1

公开(公告)日：2024-12-10

申请号：US18113752

申请日：2023-02-24

Applicant: Robert T. Bondokov ,  Sean P. Branagan ,  James Grandusky ,  Kasey Hogan ,  Justin Mark ,  Jianfeng Chen

Inventor： Robert T. Bondokov ,  Sean P. Branagan ,  James Grandusky ,  Kasey Hogan ,  Justin Mark ,  Jianfeng Chen

IPC: C30B29/40 ,  C01B21/072 ,  C30B23/00

Abstract: In various embodiments, aluminum nitride single crystals are rapidly diameter-expanded during growth and have large crystal augmentation parameters. The aluminum nitride single crystals advantageously have low densities of basal plane dislocations and large substrate versatility metrics.

公开(公告)号：US20240240356A1

公开(公告)日：2024-07-18

申请号：US18405155

申请日：2024-01-05

Applicant: Morgan State University

Inventor： Abdellah Lisfi

IPC: C30B29/26 ,  C30B23/00 ,  C30B23/06 ,  C30B35/00

CPC classification number: C30B29/26 ,  C30B23/002 ,  C30B23/063 ,  C30B35/00

Abstract: A cobalt ferrite film consisting of twinned cobalt ferrite isomer crystals, metastable normal Co2+tet[Fe3+oct]2O4 isomer [nCFO] and tetragonal inverted Fe3+tet[Co2+Fe3+]octO4 isomer [iCFO], the nCFO and iCFO isomer crystals alternating in chessboard fashion in three dimensions, the cobalt ferrite film made by pulsed laser deposition in a vacuum chamber from a polycrystalline CoFe2O4 target on a single crystal one-side polished MgO substrate preferably heated to a temperature of greater than about 600° C.

公开(公告)号：US20240117521A1

公开(公告)日：2024-04-11

申请号：US18374765

申请日：2023-09-29

Applicant: The Trustees of Princeton University

Inventor： Barry Rand ,  Jordan Dull

IPC: C30B23/02 ,  C30B23/00 ,  C30B29/54

CPC classification number: C30B23/025 ,  C30B23/002 ,  C30B29/54

Abstract: Disclosed are criteria for a lattice matched, multilayer, organic crystal heterostructure. Current organic devices (e.g., photovoltaics, light emitting diodes, or transistors) rely on amorphous material despite superior charge transport properties of crystalline organic semiconductors. Achieving a fully crystalline device architecture requires growth of a molecular crystal atop a different one, or heteroepitaxy, and is particularly relevant in organic semiconductor devices that demand multiple layers of different molecules. This challenge is complicated when attempting to stack highly ordered layers needed for crystalline devices because strategies are needed to ensure that each layer grows crystalline. It is shown herein that lattice matching alone is not sufficient for successful organic heteroepitaxy deposited via physical vapor deposition. The process disclosed herein includes an additional criterion in which the lattice matched plane of the adlayer must also be the crystal face with the lowest surface energy. Application of this process leads to a full crystalline multilayer system in which there is perfect registry between the template layer and adlayer. Not only does this allow for the study of highly ordered interfaces, but it also opens the door to entirely crystalline device architectures, likely improving the efficiency over their amorphous counterparts.

公开(公告)号：US11952676B2

公开(公告)日：2024-04-09

申请号：US17072973

申请日：2020-10-16

Applicant: GlobalWafers Co., Ltd.

Inventor： Ching-Shan Lin ,  Jian-Hsin Lu ,  Chien-Cheng Liou ,  Man-Hsuan Lin

IPC: H01L29/16 ,  C30B23/00 ,  C30B23/02 ,  C30B25/02 ,  C30B29/36 ,  H01L21/02 ,  H01L29/32 ,  H01L29/36

CPC classification number: C30B23/025 ,  C30B23/005 ,  C30B25/02 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02447 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/02529 ,  H01L21/02576 ,  H01L21/02631 ,  H01L29/1608 ,  H01L29/32 ,  H01L29/36

Abstract: A silicon carbide crystal includes a seed layer, a bulk layer and a stress buffering structure formed between the seed layer and the bulk layer. The seed layer, the bulk layer and the stress buffering structure are each formed with a dopant that cycles between high and low dopant concentration. The stress buffering structure includes a plurality of stacked buffer layers and a transition layer over the buffer layers. The buffer layer closest to the seed layer has the same variation trend of the dopant concentration as the buffer layer closest to the transition layer, and the dopant concentration of the transition layer is equal to the dopant concentration of the seed layer.

公开(公告)号：US11913136B2

公开(公告)日：2024-02-27

申请号：US18093428

申请日：2023-01-05

Applicant: Robert T. Bondokov ,  Jianfeng Chen ,  Keisuke Yamaoka ,  Shichao Wang ,  Shailaja P. Rao ,  Takashi Suzuki ,  Leo J. Schowalter

Inventor： Robert T. Bondokov ,  Jianfeng Chen ,  Keisuke Yamaoka ,  Shichao Wang ,  Shailaja P. Rao ,  Takashi Suzuki ,  Leo J. Schowalter

IPC: H01L21/00 ,  C30B29/40 ,  C30B23/06 ,  H01L33/00 ,  C01B21/072 ,  C30B23/00 ,  H01S5/30 ,  H01S5/343 ,  H01S5/02 ,  H01L21/02

CPC classification number: C30B29/403 ,  C01B21/072 ,  C30B23/002 ,  C30B23/066 ,  H01L33/0075 ,  H01L21/02389 ,  H01S5/0217 ,  H01S5/3013 ,  H01S5/34333

Abstract: In various embodiments, controlled heating and/or cooling conditions are utilized during the fabrication of aluminum nitride single crystals and aluminum nitride bulk polycrystalline ceramics. Thermal treatments may also be utilized to control properties of aluminum nitride crystals after fabrication.

公开(公告)号：US20240003054A1

公开(公告)日：2024-01-04

申请号：US18466188

申请日：2023-09-13

Applicant: SiCrystal GmbH

Inventor： Bernhard Ecker ,  Ralf Müller ,  Matthias Stockmeier ,  Michael Vogel ,  Arnd-Dietrich Weber

IPC: C30B29/36 ,  C30B23/02 ,  C30B23/06 ,  C30B23/00

CPC classification number: C30B29/36 ,  C30B23/025 ,  C30B23/066 ,  C30B23/002 ,  C30B23/063

Abstract: An SiC volume monocrystal is processed by sublimation growth. An SiC seed crystal is placed in a crystal growth region of a growing crucible and SiC source material is introduced into an SiC storage region. During growth, at a growth temperature of up to 2,400° C. and a growth pressure between 0.1 mbar and 100 mbar, an SiC growth gas phase is generated by sublimation of the SiC source material and by transport of the sublimated gaseous components into the crystal growth region, where an SiC volume monocrystal grows by deposition from the SiC growth gas phase on the SiC seed crystal. A mechanical stress is introduced into the SiC seed crystal at room temperature prior to the start of the growth to cause seed screw dislocations present in the SiC seed crystal to undergo a dislocation movement so that seed screw dislocations recombine.

公开(公告)号：US11846038B2

公开(公告)日：2023-12-19

申请号：US17268189

申请日：2019-07-26

Applicant: SENIC Inc.

Inventor： Jung Woo Choi ,  Jung-Gyu Kim ,  Kap-Ryeol Ku ,  Sang Ki Ko ,  Byung Kyu Jang

IPC: C30B23/02 ,  C30B23/00 ,  C30B29/36

CPC classification number: C30B23/005 ,  C30B23/02 ,  C30B29/36

Abstract: A method of growing a semi-insulating SiC single crystal ingot, the method comprising the steps of: (1) placing a dopant coated with silicon carbide (SiC) and a carbon-based material into a reaction vessel containing a seed crystal fixed thereto; and (2) growing a SiC single crystal on the seed crystal, thereby yielding a high-quality semi-insulating SiC single crystal ingot with a uniform thickness-based doping concentration. In addition, another embodiment relates to a method of growing a semi-insulating silicon carbide single crystal ingot, the method comprising the steps of: (a) placing in a reaction vessel, a composition comprising a carbon-containing polymer resin, a solvent, a dopant, and silicon carbide (SiC); (b) solidifying the composition; and (c) growing a SiC single crystal ingot on a seed crystal fixed to the reaction vessel, thereby yielding a high-quality semi-insulating SiC single crystal ingot with a uniform thickness-based doping concentration.

公开(公告)号：US20230349067A1

公开(公告)日：2023-11-02

申请号：US18142415

申请日：2023-05-02

Applicant: Psiquantum, Corp.

Inventor： Yong Liang ,  John Elliott Ortmann, JR. ,  John Berg ,  Ann Melnichuk

IPC: C30B23/00 ,  G06T7/00 ,  C30B29/32 ,  C30B23/02

CPC classification number: C30B23/002 ,  G06T7/001 ,  C30B29/32 ,  C30B23/02 ,  G06T2207/30108 ,  G06T2207/20081

Abstract: A method of forming a film comprises growing, using a deposition system, at least a portion of the film and analyzing, using a RHEED instrument, the at least a portion of the film. Using a computer, data is acquired from the RHEED instrument that is indicative of a stoichiometry of the at least a portion of the film. Using the computer, adjustments to one or more process parameters of the deposition system are calculated to control stoichiometry of the film during subsequent deposition. Using the computer, instructions are transmitted to the deposition system to execute the adjustments of the one or more process parameters. Using the deposition system, the one or more process parameters are adjusted.