METHOD AND SYSTEM FOR GROWING A LATTICE MATCHED, MULTILAYER, ORGANIC CRYSTAL HETEROSTRUCTURE

    公开(公告)号:US20240117521A1

    公开(公告)日:2024-04-11

    申请号:US18374765

    申请日:2023-09-29

    CPC classification number: C30B23/025 C30B23/002 C30B29/54

    Abstract: Disclosed are criteria for a lattice matched, multilayer, organic crystal heterostructure. Current organic devices (e.g., photovoltaics, light emitting diodes, or transistors) rely on amorphous material despite superior charge transport properties of crystalline organic semiconductors. Achieving a fully crystalline device architecture requires growth of a molecular crystal atop a different one, or heteroepitaxy, and is particularly relevant in organic semiconductor devices that demand multiple layers of different molecules. This challenge is complicated when attempting to stack highly ordered layers needed for crystalline devices because strategies are needed to ensure that each layer grows crystalline. It is shown herein that lattice matching alone is not sufficient for successful organic heteroepitaxy deposited via physical vapor deposition. The process disclosed herein includes an additional criterion in which the lattice matched plane of the adlayer must also be the crystal face with the lowest surface energy. Application of this process leads to a full crystalline multilayer system in which there is perfect registry between the template layer and adlayer. Not only does this allow for the study of highly ordered interfaces, but it also opens the door to entirely crystalline device architectures, likely improving the efficiency over their amorphous counterparts.

Patent Agency Ranking