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公开(公告)号：US12198926B2
公开(公告)日：2025-01-14
申请号：US17377135
申请日：2021-07-15
Applicant: Psiquantum, Corp.
Inventor： Yong Liang , Ann Melnichuk
IPC: H01L21/02 , H01L21/683
Abstract: In some embodiments a method comprises depositing a first silicon nitride layer on a top surface of a semiconductor wafer and forming one or more first gaps in the first silicon nitride layer. The one or more first gaps can relieve stress formed in the first silicon nitride layer. A first fill material is deposited on the first silicon nitride layer and the first silicon nitride layer is planarized. A second silicon nitride layer is deposited across the first silicon nitride layer and one or more second gaps are formed in the second silicon nitride layer. The one or more second gaps can relieve stress formed in the second silicon nitride layer. A second fill material is deposited across the second silicon nitride layer and the second silicon nitride layer is planarized.
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公开(公告)号：US12176672B2
公开(公告)日：2024-12-24
申请号：US17239085
申请日：2021-04-23
Applicant: Psiquantum, Corp.
Inventor： Eric Dudley , Yong Liang , Faraz Najafi , Vimal Kamineni , Ann Melnichuk
Abstract: An optical device includes a substrate, a dielectric layer on the substrate, a waveguide within the dielectric layer, a light sensitive component (e.g., a photodetector) in the dielectric layer and coupled to the waveguide, and a plurality of light isolation structures in at least one of the substrate or the dielectric layer and configured to prevent stray light from reaching the light sensitive component. In some embodiments, a light isolation structure in the plurality of light isolation structures includes two opposing sidewalls and a filling material between the two opposing sidewalls. The two opposing sidewalls include an optical isolation layer. The filling material is characterized by a coefficient of thermal expansion (CTE) matching a CTE of at least one of the substrate or the dielectric layer.
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公开(公告)号：US20230123000A1
公开(公告)日：2023-04-20
申请号：US18082520
申请日：2022-12-15
Applicant: Psiquantum, Corp.
Inventor： Vimal Kumar Kamineni , Matteo Staffaroni , Faraz Najafi , Ann Melnichuk , George Kovall , Yong Liang
Abstract: A device includes a substrate, a dielectric layer on the substrate, a waveguide within the dielectric layer, and a photodetector optically coupled to the waveguide. The photodetector is disposed above the waveguide layer and is monolithically integrated with the substrate. The photodetector is configured to operate at low temperatures, such as below about 50 K or about 20 K. In some embodiments, the monolithic photonic device includes thermal isolation structures and optical isolation structures. Techniques for manufacturing the monolithic photonic device, including the thermal isolation structures and optical isolation structures, are also described.
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公开(公告)号：US20230349067A1
公开(公告)日：2023-11-02
申请号：US18142415
申请日：2023-05-02
Applicant: Psiquantum, Corp.
Inventor： Yong Liang , John Elliott Ortmann, JR. , John Berg , Ann Melnichuk
CPC classification number: C30B23/002 , G06T7/001 , C30B29/32 , C30B23/02 , G06T2207/30108 , G06T2207/20081
Abstract: A method of forming a film comprises growing, using a deposition system, at least a portion of the film and analyzing, using a RHEED instrument, the at least a portion of the film. Using a computer, data is acquired from the RHEED instrument that is indicative of a stoichiometry of the at least a portion of the film. Using the computer, adjustments to one or more process parameters of the deposition system are calculated to control stoichiometry of the film during subsequent deposition. Using the computer, instructions are transmitted to the deposition system to execute the adjustments of the one or more process parameters. Using the deposition system, the one or more process parameters are adjusted.
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Patent Agency Ranking
公开(公告)号：US11680337B2
公开(公告)日：2023-06-20
申请号：US17219970
申请日：2021-04-01
Applicant: Psiquantum, Corp.
Inventor： Yong Liang , John Elliott Ortmann, Jr. , John Berg , Ann Melnichuk
CPC classification number: C30B23/002 , C30B23/02 , C30B29/32 , G06T7/001 , G06T2207/20081 , G06T2207/30108
Abstract: A method of forming a film comprises growing, using a deposition system, at least a portion of the film and analyzing, using a RHEED instrument, the at least a portion of the film. Using a computer, data is acquired from the RHEED instrument that is indicative of a stoichiometry of the at least a portion of the film. Using the computer, adjustments to one or more process parameters of the deposition system are calculated to control stoichiometry of the film during subsequent deposition. Using the computer, instructions are transmitted to the deposition system to execute the adjustments of the one or more process parameters. Using the deposition system, the one or more process parameters are adjusted.
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公开(公告)号：US20210242651A1
公开(公告)日：2021-08-05
申请号：US17239085
申请日：2021-04-23
Applicant: Psiquantum, Corp.
Inventor： Eric Dudley , Yong Liang , Faraz Najafi , Vimal Kamineni , Ann Melnichuk
Abstract: An optical device includes a substrate, a dielectric layer on the substrate, a waveguide within the dielectric layer, a light sensitive component (e.g., a photodetector) in the dielectric layer and coupled to the waveguide, and a plurality of light isolation structures in at least one of the substrate or the dielectric layer and configured to prevent stray light from reaching the light sensitive component. In some embodiments, a light isolation structure in the plurality of light isolation structures includes two opposing sidewalls and a filling material between the two opposing sidewalls. The two opposing sidewalls include an optical isolation layer. The filling material is characterized by a coefficient of thermal expansion (CTE) matching a CTE of at least one of the substrate or the dielectric layer.
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公开(公告)号：US12037700B2
公开(公告)日：2024-07-16
申请号：US18142415
申请日：2023-05-02
Applicant: Psiquantum, Corp.
Inventor： Yong Liang , John Elliott Ortmann, Jr. , John Berg , Ann Melnichuk
CPC classification number: C30B23/002 , C30B23/02 , C30B29/32 , G06T7/001 , G06T2207/20081 , G06T2207/30108
Abstract: A method of forming a film comprises growing, using a deposition system, at least a portion of the film and analyzing, using a RHEED instrument, the at least a portion of the film. Using a computer, data is acquired from the RHEED instrument that is indicative of a stoichiometry of the at least a portion of the film. Using the computer, adjustments to one or more process parameters of the deposition system are calculated to control stoichiometry of the film during subsequent deposition. Using the computer, instructions are transmitted to the deposition system to execute the adjustments of the one or more process parameters. Using the deposition system, the one or more process parameters are adjusted.
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公开(公告)号：US20220037145A1
公开(公告)日：2022-02-03
申请号：US17377135
申请日：2021-07-15
Applicant: Psiquantum, Corp.
Inventor： Yong Liang , Ann Melnichuk
IPC: H01L21/02 , H01L21/683
Abstract: In some embodiments a method comprises depositing a first silicon nitride layer on a top surface of a semiconductor wafer and forming one or more first gaps in the first silicon nitride layer. The one or more first gaps can relieve stress formed in the first silicon nitride layer. A first fill material is deposited on the first silicon nitride layer and the first silicon nitride layer is planarized. A second silicon nitride layer is deposited across the first silicon nitride layer and one or more second gaps are formed in the second silicon nitride layer. The one or more second gaps can relieve stress formed in the second silicon nitride layer. A second fill material is deposited across the second silicon nitride layer and the second silicon nitride layer is planarized.
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公开(公告)号：US20210310152A1
公开(公告)日：2021-10-07
申请号：US17219970
申请日：2021-04-01
Applicant: Psiquantum, Corp.
Inventor： Yong Liang , John Elliott Ortmann, JR. , John Berg , Ann Melnichuk
Abstract: A method of forming a film comprises growing, using a deposition system, at least a portion of the film and analyzing, using a RHEED instrument, the at least a portion of the film. Using a computer, data is acquired from the RHEED instrument that is indicative of a stoichiometry of the at least a portion of the film. Using the computer, adjustments to one or more process parameters of the deposition system are calculated to control stoichiometry of the film during subsequent deposition. Using the computer, instructions are transmitted to the deposition system to execute the adjustments of the one or more process parameters. Using the deposition system, the one or more process parameters are adjusted.
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