公开(公告)号：US20250027227A1

公开(公告)日：2025-01-23

申请号：US18355734

申请日：2023-07-20

Applicant: Winsheng Material Technology Co., Ltd.

Inventor： Yun-Fu Chen ,  Wei-Tse Hsu ,  Min-Sheng Chu ,  Chien-Li Yang ,  Tsu-Hsiang Lin ,  Yuan-Hong Huang

IPC: C30B23/00 ,  C30B23/02 ,  C30B29/36 ,  C30B33/02

Abstract: Provided are a silicon carbide crystal growth device and a quality control method. The device includes: an annealing unit, a crystal growth unit, an atmosphere control unit, and a transport system; the atmosphere control unit provides a gas environment with low water, oxygen and nitrogen; the transport system transports a plurality of target objects after high-temperature purification by the annealing unit to the atmosphere control unit; after assembling silicon carbide seed crystal and silicon carbide powder in a graphite crucible and covering with thermal insulation material to form a container inside the atmosphere control unit, the transport system transports the container to the crystal growth unit. The method uses a weighing system in a chamber of the crystal growth unit to detect a weight change of silicon carbide seed crystal and silicon carbide powder during a crystal growth process through a plurality of weight sensors of the weighing system.