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    Process for epitaxially growing semiconductor crystals
    1.
    发明授权
    Process for epitaxially growing semiconductor crystals 失效
    外延生长半导体晶体的工艺

    公开(公告)号：US3718511A

    公开(公告)日：1973-02-27

    申请号：US3718511D

    申请日：1970-12-15

    Applicant: THOMSON CSF

    Inventor： MOULIN M

    IPC: H01L21/00 ,  H01L21/208 ,  H01L29/24 ,  H01L31/00 ,  H01L33/00 ,  H01L1/00

    CPC classification number: H01L31/00 ,  H01L21/00 ,  H01L21/02417 ,  H01L21/02485 ,  H01L21/02568 ,  H01L21/02573 ,  H01L21/02628 ,  H01L29/24 ,  H01L33/00 ,  Y10S148/063

    Abstract: A semiconductor with a P/N junction, adapted to be used as a detector or emitter of luminous radiation, is grown from a bath consisting of a liquefied mixture of three elements which are the constituents of two alloys or solid solutions taken from Groups II/VI and/or IV/VI of the Periodic Table. The proportions of the three elements in the mixture are so chosen that the solidus curve of the temperature/composition diagram intersects the stoichiometric line at a point lying along the boundary between the solid and the solid/liquid phase on the side of the lower concentrations of the element common to the two alloys. In a state of thermodynamic equilibrium for the liquid/solid phase, the bath is slowly cooled in a temperature range above or below a critical temperature corresponding to the point of intersection with resulting growth of an N-type or P-type layer on a substrate immersed in the bath. By a change in the composition, with or without a shift in temperature, the conductivity type of the layer is altered with formation of a P/N junction.

    Abstract translation: 具有P / N结的半导体，适于用作发光体的检测器或发射器，从由三种元素的液化混合物组成的浴中生长，所述三种元素是两种合金的组分或固体溶液，其取自II / VI和/或IV / VI。 混合物中三种元素的比例如此选择，使得温度/组成图的固相线曲线在沿着固体和固/液相之间的边界处的点处的化学计量线相交，其中较低浓度 这两种合金的共同元素。 在液/固相的热力学平衡状态下，将浴在高于或低于对应于交点的临界温度的温度范围内缓慢冷却，从而在衬底上形成N型或P型层 浸在浴缸里 通过组成的变化，伴随或不伴随温度的变化，层的导电类型随着P / N结的形成而改变。

    Integrated circuit fabrication
    2.
    发明授权
    Integrated circuit fabrication 失效

    公开(公告)号：US3620833A

    公开(公告)日：1971-11-16

    申请号：US3620833D

    申请日：1966-12-23

    Applicant: TEXAS INSTRUMENTS INC

    Inventor： GLEIM PAUL S ,  BEAN KENNETH E

    IPC: H01L21/00 ,  H01L21/762 ,  C23C13/04 ,  H01L1/00

    CPC classification number: H01L21/76297 ,  H01L21/00 ,  Y10S148/043 ,  Y10S148/085 ,  Y10S148/115 ,  Y10S148/122 ,  Y10S148/152 ,  Y10S438/974 ,  Y10S438/977

    Abstract: An integrated circuit structure having a plurality of monocrystalline semiconductor islands separated by a layer of dielectric insulation is fabricated by a method which begins with the formation of a plurality of nucleation sites upon a supported layer of insulating material. A single crystallite of semiconductor material is then vapor deposited at each of the nucleation sites. The crystallites are then covered by the vapor deposition of a second layer of dielectric material. The second layer of dielectric material is then supported by the deposition of a substrate material, followed by removal of the original supporting body to expose the first layer of insulating material, thereby providing a plurality of electrically isolated regions of single crystallite semiconductor material embedded in a suitable substrate. The structure is then completed by forming and interconnecting desired circuit components within the single crystallites.

    Control apparatus and method for relay node duplexing
    3.
    发明授权
    Control apparatus and method for relay node duplexing 失效
    中继节点双工控制装置及方法

    公开(公告)号：US07085226B1

    公开(公告)日：2006-08-01

    申请号：US09672782

    申请日：2000-09-29

    Applicant: In Chol Jung ,  Oh Kuk Gweon

    Inventor： In Chol Jung ,  Oh Kuk Gweon

    IPC: H01L1/00 ,  H04J3/14 ,  G08C25/00

    CPC classification number: G06F11/2038 ,  G06F11/2028

    Abstract: The present invention relates to a message transmission system, and more particularly, to a control apparatus and method for relay node duplexing. In the invention, when the exchange of the active node relaying a message by buffering is requested, the duplexing control unit of the active node controls such that the active node performs only the message transmission function, and the duplexing control unit of the standby node controls such that the standby node performs only the message receiving function. When the messages already inputted to the active node before the exchange request are all transmitted, the completion of the exchange is controlled, and when the exchange is completed, the standby node obtains the active right, thereby preventing the loss of a message during the exchange operaiton.

    Abstract translation: 本发明涉及消息传输系统，更具体地说，涉及一种用于中继节点双工的控制装置和方法。 在本发明中，当请求通过缓冲中继消息的主动节点的交换时，主动节点的双工控制单元控制主动节点仅执行消息发送功能，并且备用节点的双工控制单元控制 使得备用节点仅执行消息接收功能。 当在交换请求之前已经输入到活动节点的消息全部被发送时，交换的完成被控制，并且当交换完成时，备用节点获得活动权限，从而防止在交换期间丢失消息 歌剧院

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