公开(公告)号：US3465874A

公开(公告)日：1969-09-09

申请号：US3465874D

申请日：1967-06-12

Applicant: FRANCES HUGLE

Inventor： HUGLE FRANCES ,  PERRINE WILLIAM

IPC: H05K13/00 ,  B65D83/00

CPC classification number: H05K13/003

公开(公告)号：US3481801A

公开(公告)日：1969-12-02

申请号：US3481801D

申请日：1966-10-10

Applicant: FRANCES HUGLE

Inventor： HUGLE FRANCES

IPC: H01L21/761 ,  H01L21/8222 ,  H01L7/00

CPC classification number: H01L21/761 ,  H01L21/8222 ,  Y10S148/007 ,  Y10S148/037 ,  Y10S148/085 ,  Y10S148/098

公开(公告)号：US3465150A

公开(公告)日：1969-09-02

申请号：US3465150D

申请日：1967-06-15

Applicant: FRANCES HUGLE

Inventor： HUGLE FRANCES

IPC: G01T1/16 ,  H01L21/60

CPC classification number: H01L24/81 ,  H01L24/75 ,  H01L2224/75 ,  H01L2224/75753 ,  H01L2224/81801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014

公开(公告)号：US3440027A

公开(公告)日：1969-04-22

申请号：US3440027D

申请日：1966-06-22

Applicant: FRANCES HUGLE

Inventor： HUGLE FRANCES

IPC: H01L21/60 ,  H01L23/498 ,  H01L1/00

CPC classification number: H01L24/86 ,  H01L23/4985 ,  H01L24/81 ,  H01L2224/81801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0105 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  Y10S206/82 ,  Y10T29/49121 ,  Y10T428/12201 ,  Y10T428/12396 ,  Y10T428/12535

公开(公告)号：US3574014A

公开(公告)日：1971-04-06

申请号：US3574014D

申请日：1967-07-24

Applicant: FRANCES HUGLE

Inventor： HUGLE FRANCES

IPC: H01L21/00 ,  H01L21/308 ,  H01L7/44 ,  H01L7/50

CPC classification number: H01L21/00 ,  H01L21/308 ,  Y10S148/043 ,  Y10S148/051 ,  Y10S148/053 ,  Y10S148/071 ,  Y10S148/106 ,  Y10S148/122 ,  Y10S438/945

Abstract: ING THE DIELECTRIC LAYER BY AN ETCH THAT IS EFFECTIVE UPON THAT LAYER BUT NOT EFFECTIVE UPON THE LAYER OF METAL.

A PROCESS FOR FORMING A PATTERN IN A DIELECTRIC LAYER BY DEPOSITING THE LAYER UPON A SEMICONDUCTOR AT ELEVATED TEMPERATURE FROM A GAS, DEPOSITING A LAYER OF METAL OVER THAT BY CHANGING THE GAS WHILE KEEPING THE WORK IN THE SAME CHAMBER, REMOVING THE LAYER OF METAL BY A BEAM OF ENERGY (SUCH AS AN ELECTRON OR A LASER BEAM) WHERE THE DIELECTRIC LAYER IS TO BE FORMED INTO A PATTERN AND ETCH

公开(公告)号：US3574007A

公开(公告)日：1971-04-06

申请号：US3574007D

申请日：1967-07-19

Applicant: FRANCES HUGLE

Inventor： HUGLE FRANCES

IPC: H01L21/84 ,  H01L23/29 ,  H01L27/00 ,  H01L29/00 ,  H01L7/36 ,  H01L11/00

CPC classification number: H01L27/00 ,  H01L21/84 ,  H01L23/29 ,  H01L29/00 ,  H01L2924/0002 ,  Y10S148/043 ,  Y10S148/051 ,  Y10S148/053 ,  Y10S148/085 ,  Y10S148/097 ,  Y10S148/122 ,  Y10S148/15 ,  Y10S438/906 ,  H01L2924/00

Abstract: A PROCESS FOR PRODUCING A LARGE PLURALITY OF MIS DEVICES, WHICH MAY ALSO BE ASSOICATED WITH SIMULTANEOUSLY PRODUCED CIRCUIT, ELEMENTS TO FORM INTEGRATED CIRCUITS. A NON-SINGLE CRYSTAL SUBSTRATE RECEIVES A THIN LAYER OF SEMICONDUCTOR IN AN EPITAXIAL REACTOR, A THINNER LAYER OF A FIRST INSULATING MATERIAL, A THICKER LAYER OF A SECOND INSULATING MATERIAL, SELECTIVE ETCHING OF THESE INSULATING MATERIALS, THE FORMATION OF JUNCTIONS BY DIFFUSION THROUGH ETCHED AREAS, AND A METALLIC COATING DEPOSITED AND ETCHED TO PROVIDE CONNECTIONS. PLURAL REACTOR STEPS ARE SUCCESSIVELY TAKEN TO MINIMIZE CONTAMINATION OF THE PRODUCT.