公开(公告)号：US3715636A

公开(公告)日：1973-02-06

申请号：US3715636D

申请日：1972-01-03

Applicant: GEN ELECTRIC

Inventor： JAFFE M ,  POTTER R

IPC: H01L33/34 ,  H01L33/48 ,  H01L33/56 ,  H01L33/64 ,  H01L15/00 ,  H01L1/02 ,  H01L1/10

CPC classification number: H01L33/64 ,  H01L33/343 ,  H01L33/483 ,  H01L33/56 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A boron-doped silicon carbide light-emitting diode chip is mounted, such as on a support member of porous ceramic or other material of similarly low thermal conductivity, so as to operate at a temperature of at least 150*C. Such a construction increases the amount of light produced by the boron-doped silicon carbide diode, due to increased operating temperature. A cover is placed over the diode to prevent convection cooling, thus further increasing the operating temperature and hence the light output. Instead of boron doping, the silicon carbide diode can be doped with other materials that produce similarly deep acceptor levels.

Abstract translation: 硼掺杂的碳化硅发光二极管芯片安装在多孔陶瓷的支撑构件或类似的低导热性的其它材料上，以便在至少150℃的温度下工作。这种结构增加 硼掺杂碳化硅二极管产生的光量，由于工作温度的升高。 在二极管上放置盖子以防止对流冷却，从而进一步增加工作温度，从而进一步增加光输出。 代替硼掺杂，碳化硅二极管可以掺杂有产生类似深受主电平的其它材料。

公开(公告)号：US3536960A

公开(公告)日：1970-10-27

申请号：US3536960D

申请日：1968-06-26

Applicant: ELECTRIC REGULATOR CORP

Inventor： OTTESON CHRISTIAN S ,  ETTINGER JAMES P

IPC: F22B27/14 ,  F24H1/14 ,  F24H1/16 ,  F28F13/00 ,  H01J19/36 ,  H01L23/40 ,  H05K7/20 ,  H01L1/12 ,  H01L1/02

CPC classification number: H05K7/209 ,  F22B27/14 ,  F24H1/145 ,  F24H1/165 ,  F28F13/003 ,  H01J19/36 ,  H01J2893/0027 ,  H01L23/4006 ,  H01L2023/4025 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：US3458776A

公开(公告)日：1969-07-29

申请号：US3458776D

申请日：1966-02-28

Applicant: WESTINGHOUSE ELECTRIC CORP

Inventor： FERREE HERBERT E

IPC: H01L23/16 ,  H01L23/48 ,  H01L1/02 ,  H01L11/00

CPC classification number: H01L24/72 ,  H01L23/16 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082

公开(公告)号：US3929511A

公开(公告)日：1975-12-30

申请号：US44557574

申请日：1974-02-25

Applicant: JADE CONTROLS INC

Inventor： SOLOMON RALPH E

IPC: G01K1/14 ,  G01K7/06 ,  H01L1/02

CPC classification number: G01K7/06 ,  G01K1/14

Abstract: A thermocouple assembly in which the inner end of the tip is provided with a straight knurl which is forced into the bore of the base fitting so that the teeth of the knurl become embedded in the wall of the base fitting, the end of the tip having a beveled surface clamping a flared end of the conductor tubing against a similarly beveled surface of the fitting within the bore so that the tip, fitting and tubing are mechanically and electrically connected.

Abstract translation: 一种热电偶组件，其中尖端的内端设置有直的滚花，其被迫进入基部配件的孔中，使得滚花的齿变得嵌入基部配件的壁中，尖端的端部具有 一个倾斜的表面将导体管的扩口端夹紧在孔内的配件的类似倾斜的表面上，使得尖端，配件和管道机械地和电连接。

公开(公告)号：US3743761A

公开(公告)日：1973-07-03

申请号：US3743761D

申请日：1971-08-10

Applicant: GEN ELECTRIC

Inventor： HALSTEAD R

IPC: H01R33/945 ,  H05K5/02 ,  H01L1/02

CPC classification number: H01R33/945

Abstract: A holder including a pair of housings for receiving the ends of a high voltage solid-state rectifier, leaving the intermediate section of the rectifier exposed for cooling. Each end of the rectifier is received by a terminal which is slidingly mounted within a housing. Spring means are provided to bias the terminals into contact with the ends of the rectifier. A conductor associated with one terminal is directed along a portion of the body of the rectifier to distribute the voltage gradient therein, and strain relief means are provided to prevent the output conductor from being pulled loose. Each of the housings is provided with a latching cover or door to facilitate the installation and withdrawal of the solid-state rectifier.

Abstract translation: 一种支架，包括一对用于接收高压固态整流器的端部的外壳，使整流器的中间部分暴露以进行冷却。 整流器的每一端由滑动地安装在壳体内的端子接收。 提供弹簧装置以将端子偏置成与整流器的端部接触。 与一个端子相关联的导体沿着整流器主体的一部分被引导以在其中分布电压梯度，并且设置应变消除装置以防止输出导体被拉动。 每个壳体设置有一个闭锁盖或门，以便于固态整流器的安装和取出。

公开(公告)号：US3539803A

公开(公告)日：1970-11-10

申请号：US3539803D

申请日：1967-12-21

Applicant: BARNES ENG CO

Inventor： BEERMAN HENRY P

IPC: G01J5/34 ,  H01L1/02

CPC classification number: G01J5/34

公开(公告)号：US3457472A

公开(公告)日：1969-07-22

申请号：US3457472D

申请日：1966-10-12

Applicant: GEN ELECTRIC

Inventor： MULSKI FRANCIS P

IPC: H01L23/051 ,  H01L23/40 ,  H01L23/48 ,  H01L1/02

CPC classification number: H01L24/33 ,  H01L23/051 ,  H01L23/4006 ,  H01L24/72 ,  H01L2023/4025 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01052 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/12036 ,  H01L2924/1301 ,  H01L2924/3512 ,  H01L2924/00

Abstract: In a solderless semiconductor device, a disc of semiconductor material is sandwiched between opposing electrodes of a sealed housing where it is centered by a metal ring which is removably seated on a peripheral flange of one of the electrodes.

公开(公告)号：US07307486B2

公开(公告)日：2007-12-11

申请号：US11233414

申请日：2005-09-21

Applicant: Scott Michael Pernia ,  Michael Shannon McCorquodale ,  Sundus Kubba

Inventor： Scott Michael Pernia ,  Michael Shannon McCorquodale ,  Sundus Kubba

IPC: H03B5/04 ,  H03B5/12 ,  H01L1/00 ,  H01L1/02 ,  H01L3/00

CPC classification number: H03B5/06 ,  H03B5/04 ,  H03B5/1212 ,  H03B5/1228 ,  H03B5/124 ,  H03B2200/0038 ,  H03B2200/005 ,  H03B2200/0098 ,  H03J2200/10 ,  H03K23/66 ,  H03K23/662 ,  H03L1/00 ,  H03L1/026 ,  H03L3/00 ,  H03L7/06 ,  H03L7/0812 ,  H03L7/099 ,  H03L7/18 ,  H03L7/24

Abstract: An apparatus, system and method are provided for low-latency start-up of a free-running harmonic oscillator. The exemplary apparatus embodiment comprises a first and second current sources to generate first and second currents; a bias current monitor adapted to detect a magnitude of the second current and to provide a control signal when the magnitude of the second current is equal to or greater than a predetermined magnitude; and a bias controller adapted to switch the first current from the oscillator and to switch the second current to the oscillator in response to the control signal. a reference voltage generator, a comparator, and a bias controller. Exemplary embodiments include reference voltage generator, a comparator, and a bias controller.

Abstract translation: 提供了一种用于自由运行谐波振荡器的低延迟启动的装置，系统和方法。 示例性装置实施例包括用于产生第一和第二电流的第一和第二电流源; 偏置电流监视器，适于检测第二电流的大小，并且当第二电流的幅度等于或大于预定幅度时提供控制信号; 以及偏置控制器，其适于从振荡器切换第一电流并且响应于控制信号将第二电流切换到振荡器。 参考电压发生器，比较器和偏置控制器。 示例性实施例包括参考电压发生器，比较器和偏置控制器。

公开(公告)号：US3728589A

公开(公告)日：1973-04-17

申请号：US3728589D

申请日：1971-04-16

Applicant: RCA CORP

Inventor： CAULTON M

IPC: H01L21/60 ,  H01L23/36 ,  H01L23/66 ,  H01L1/02 ,  H01L1/14

CPC classification number: H01L24/85 ,  H01L23/36 ,  H01L23/66 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2223/6644 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/85 ,  H01L2224/85205 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2224/05599

Abstract: A semiconductor assembly for high frequency, high power operation includes a ground plane member of a block of an electrically and thermally conductive material having a cavity in the top surface thereof. A mounting block of an electrically insulating and thermally conductive material is mounted on the ground plane member in the cavity, and a transistor element is mounted on the mounting block. The transistor element has a collector electrode on one surface which is mechanically and electrically connected to a metal film on the mounting block, and emitter and base electrodes on its other surface which are substantially coplanar with top surface of the ground plane member. A ground bar extends across the cavity adjacent the transistor element and is mechanically and electrically connected to the top surface of the ground plane member. The base electrode of the transistor element is electrically connected to the ground plane member by wires extending from the base electrode to the top surface of the ground plane member and the ground bar. Input and output tuning circuits may be mounted on the top surface of the ground plane member and electrically connected to the base electrode and collector electrode respectively.

Abstract translation: 用于高频，高功率操作的半导体组件包括导热材料块的接地平面构件，其在其顶表面中具有空腔。 电绝缘和导热材料的安装块安装在空腔中的接地平面构件上，并且晶体管元件安装在安装块上。 晶体管元件在一个表面上具有机械和电连接到安装块上的金属膜的集电极电极，以及在其另一表面上的与接地平面构件的顶表面基本上共面的发射极和基极。 接地棒延伸穿过与晶体管元件相邻的空腔，并且机械地和电连接到接地平面构件的顶表面。 晶体管元件的基极通过从基极延伸到接地平面构件和接地棒的顶表面的电线电连接到接地平面构件。 输入和输出调谐电路可以安装在接地平面构件的顶表面上，并分别电连接到基极和集电极。

公开(公告)号：US3716764A

公开(公告)日：1973-02-13

申请号：US3716764D

申请日：1968-10-17

Applicant: TEXAS INSTRUMENTS INC

Inventor： BIRCHLER R ,  WILLIAMS E

IPC: B29C45/14 ,  H01L21/00 ,  H01L21/56 ,  H01L23/495 ,  H01L1/02

CPC classification number: B29C45/14655 ,  H01L21/565 ,  H01L23/49562 ,  H01L24/45 ,  H01L24/48 ,  H01L24/97 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/181 ,  Y10T29/49171 ,  H01L2224/85 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/05599

Abstract: A METHOD OF MAKING CONTACTS TO A SEMICONDUCTOR DEVICE AND ENCAPSULATING THE DEVICE, AND THE RESULTING DEVICE. A FRAME HAVING INWARDLY-EXTENDING CONDUCTOR STRIPS IS USED TO SUPPORT THE ASSEMBLY DURING THE STEPS OF MOUNTING A SEMICONDUCTOR WAFER ON ONE OF THE STRIPS, CONNECTING CONDUCTIVE WIRES FROM ELECTRODES ON THE WAFER TO OTHER STRIPS AND MOLDING A PLASTIC PACKAGE AROUND THE DEVICE. THE FRAME IS THEN SEVERED.