公开(公告)号：US3718511A

公开(公告)日：1973-02-27

申请号：US3718511D

申请日：1970-12-15

Applicant: THOMSON CSF

Inventor： MOULIN M

IPC: H01L21/00 ,  H01L21/208 ,  H01L29/24 ,  H01L31/00 ,  H01L33/00 ,  H01L1/00

CPC classification number: H01L31/00 ,  H01L21/00 ,  H01L21/02417 ,  H01L21/02485 ,  H01L21/02568 ,  H01L21/02573 ,  H01L21/02628 ,  H01L29/24 ,  H01L33/00 ,  Y10S148/063

Abstract: A semiconductor with a P/N junction, adapted to be used as a detector or emitter of luminous radiation, is grown from a bath consisting of a liquefied mixture of three elements which are the constituents of two alloys or solid solutions taken from Groups II/VI and/or IV/VI of the Periodic Table. The proportions of the three elements in the mixture are so chosen that the solidus curve of the temperature/composition diagram intersects the stoichiometric line at a point lying along the boundary between the solid and the solid/liquid phase on the side of the lower concentrations of the element common to the two alloys. In a state of thermodynamic equilibrium for the liquid/solid phase, the bath is slowly cooled in a temperature range above or below a critical temperature corresponding to the point of intersection with resulting growth of an N-type or P-type layer on a substrate immersed in the bath. By a change in the composition, with or without a shift in temperature, the conductivity type of the layer is altered with formation of a P/N junction.

Abstract translation: 具有P / N结的半导体，适于用作发光体的检测器或发射器，从由三种元素的液化混合物组成的浴中生长，所述三种元素是两种合金的组分或固体溶液，其取自II / VI和/或IV / VI。 混合物中三种元素的比例如此选择，使得温度/组成图的固相线曲线在沿着固体和固/液相之间的边界处的点处的化学计量线相交，其中较低浓度 这两种合金的共同元素。 在液/固相的热力学平衡状态下，将浴在高于或低于对应于交点的临界温度的温度范围内缓慢冷却，从而在衬底上形成N型或P型层 浸在浴缸里 通过组成的变化，伴随或不伴随温度的变化，层的导电类型随着P / N结的形成而改变。