Diode array storage system having a self-registered target and method of forming
    1.
    发明授权
    Diode array storage system having a self-registered target and method of forming 失效
    具有自我注册目标的二极体阵列存储系统及其形成方法

    公开(公告)号:US3698078A

    公开(公告)日:1972-10-17

    申请号:US3698078D

    申请日:1969-12-22

    申请人: GEN ELECTRIC

    摘要: A self-registered diode array camera tube target is formed utilizing a refractory metal grid as a mask both during etching of the insulating layer protecting the semiconductive substrate from electron beam irradiation and during diffusion of the monolithic diode array into the substrate. The refractory metal grid thus completely overlies the insulating layer between adjacent diodes of the target and, upon the application of a suitable electrical bias to the grid, the landing characteristics of the electron beam upon the target is controlled to inhibit charging of the insulating layer by the scanning beam. A dual grid camera tube target also is disclosed wherein the outermost grid controls the electron beam landing profile while a more positively biased inner grid remote from the electron beam negates the generation of conductivity producing charge carriers at the substrate-insulating layer interface.

    摘要翻译: 在绝缘层的蚀刻期间,在保护半导体衬底免受电子束照射和在单片二极管阵列扩散到衬底期间,利用难熔金属网格作为掩模形成自我注册的二极管阵列相机管目标。 因此,难熔金属网格完全覆盖在目标的相邻二极管之间的绝缘层上,并且当对电网施加合适的电偏压时,电子束对靶的着陆特性被控制,以阻止绝缘层的充电 扫描光束。 还公开了一种双栅相机管目标,其中最外面的栅格控制电子束着陆轮廓,而偏离电子束的更正偏置的内栅格消除了在衬底绝缘层界面处产生导电性的电荷载流子的产生。

    Method of making a silicon based biomedical sensor
    7.
    发明授权
    Method of making a silicon based biomedical sensor 失效
    制造硅基生物医学传感器的方法

    公开(公告)号:US5693577A

    公开(公告)日:1997-12-02

    申请号:US632032

    申请日:1996-04-12

    IPC分类号: G01N27/12 H01L21/22

    摘要: A sensor 20 is formed on semiconductor substrate 22. Dielectric layers 23 and 24 are formed on the face and backside of substrate 22, respectively. Metal leads 26 and 28 contact the substrate through openings in the dielectric layer 23. The leads 26 and 28 are also connected to the set of interleaved longitudinal contact fingers 27 and 29. Additionally, a pair of backside contacts 30 and 32 are formed on the dielectric layer 24. The backside contact 30 is in contact only with the metal lead 26 through a conductive region 34.

    摘要翻译: 传感器20形成在半导体衬底22上。电介质层23和24分别形成在衬底22的表面和背面上。 金属引线26和28通过介质层23中的开口接触基板。引线26和28也连接到一组交错的纵向接触指27和29.另外,一对背侧触点30和32形成在 电介质层24.背面触点30仅通过导电区域34与金属引线26接触。

    PROCESS FOR PREPARING EPITAXIAL LAYERS OF Hg{11 {118 {11 Cd{11 Te
    9.
    发明授权
    PROCESS FOR PREPARING EPITAXIAL LAYERS OF Hg{11 {118 {11 Cd{11 Te 失效
    制备Hg的外延层的方法{11 {118 {11 Cd {11 Te

    公开(公告)号:US3725135A

    公开(公告)日:1973-04-03

    申请号:US3725135D

    申请日:1968-10-09

    申请人: HONEYWELL INC

    IPC分类号: H01L31/18 H01L3/20

    摘要: An isothermal process for preparing epitaxial layers of Hg1 xCdxTe in an excess mercury vapor environment. In a preferred embodiment the process provides layers having a predetermined x value within the Hg1 xCdxTe alloy system by the selection of a predetermined mercury vapor pressure during processing.

    摘要翻译: 在过量汞蒸汽环境中制备Hg1-xCdxTe外延层的等温工艺。 在优选实施方案中,该方法通过在处理期间选择预定的水银蒸汽压力来提供在Hg1-xCdxTe合金系统内具有预定x值的层。