Silicon based sensor apparatus
    1.
    发明授权
    Silicon based sensor apparatus 失效
    硅基传感器装置

    公开(公告)号:US5625209A

    公开(公告)日:1997-04-29

    申请号:US434816

    申请日:1995-05-04

    IPC分类号: G01N27/12 H01L23/58

    摘要: A biomedical sensor (20) is formed on a semiconductor substrate (22). Insulated dielectric layers (23, 24) are formed on the face and backside of the semiconductor substrate (22). Metal leads (26, 28) contact the substrate (22) through openings in the dielectric layer (23). The leads (26, 28) are also each connected to a set of interleaved longitudinal contact fingers (27, 29). A pair of contacts (30, 32) are formed on the opposite side of the substrate (22) from the contact figures (27, 29). A conductive biologic sample is placed over the interleaf fingers (27, 29), electrical measurements can be made through backside contacts (30, 32) so resistance measurements can be taken.

    摘要翻译: 生物医学传感器(20)形成在半导体衬底(22)上。 绝缘电介质层(23,24)形成在半导体衬底(22)的表面和背面上。 金属引线(26,28)通过介电层(23)中的开口接触基板(22)。 引线(26,28)也各自连接到一组交错的纵向接触指(27,29)。 一对触点(30,32)形成在基板(22)的与接触图(27,29)相反的一侧上。 将导电生物样品放置在中间指状物(27,29)上,可以通过背侧触点(30,32)进行电气测量,因此可以进行电阻测量。

    Method of making a silicon based biomedical sensor
    2.
    发明授权
    Method of making a silicon based biomedical sensor 失效
    制造硅基生物医学传感器的方法

    公开(公告)号:US5693577A

    公开(公告)日:1997-12-02

    申请号:US632032

    申请日:1996-04-12

    IPC分类号: G01N27/12 H01L21/22

    摘要: A sensor 20 is formed on semiconductor substrate 22. Dielectric layers 23 and 24 are formed on the face and backside of substrate 22, respectively. Metal leads 26 and 28 contact the substrate through openings in the dielectric layer 23. The leads 26 and 28 are also connected to the set of interleaved longitudinal contact fingers 27 and 29. Additionally, a pair of backside contacts 30 and 32 are formed on the dielectric layer 24. The backside contact 30 is in contact only with the metal lead 26 through a conductive region 34.

    摘要翻译: 传感器20形成在半导体衬底22上。电介质层23和24分别形成在衬底22的表面和背面上。 金属引线26和28通过介质层23中的开口接触基板。引线26和28也连接到一组交错的纵向接触指27和29.另外,一对背侧触点30和32形成在 电介质层24.背面触点30仅通过导电区域34与金属引线26接触。