Abstract:
A method of normalizing FPA system gain and correcting pixel non-uniformity for varying temperature includes determining an FPA temperature, calculating an FPA system gain as a function of the FPA temperature, and applying the FPA system gain at the FPA temperature to condition output of the FPA to produce temperature independent image data. The method also includes calculating a non-uniformity correction map on a pixel by pixel basis for the FPA, wherein non-uniformity correction for each pixel is a function of the FPA temperature, and applying the non-uniformity correction map to the imaging data from the FPA to produce temperature dependent non-uniformity corrected image data. An imaging system includes a focal plane array (FPA), a temperature sensor operatively connected to measure temperature of the FPA, and a module configured for system gain correction and non-uniformity correction as described above.
Abstract:
In one embodiment, an infrared (IR) sensor module includes an IR sensor assembly, including a substrate, a microbolometer array disposed on an upper surface of the substrate; and a cap disposed on the upper surface of the substrate and hermetically enclosing the microbolometer array. A base is disposed below the substrate, and a heat spreader having a generally planar portion is interposed between a lower surface of the substrate and an upper surface of the base. In some embodiments, the heat spreader can include a material having an anisotropic thermal conductivity, e.g., graphite.
Abstract:
An image processing apparatus comprises: a first circuit; and a second circuit connected to the first circuit; wherein the first circuit receives image data obtained by an image sensor including a vertical light-shielded region and an effective region, and applies, on image data of a first region which is a portion of the effective region of the image data, predetermined image processing by using image data of the vertical light-shielded region, the first circuit sets a second region and consecutively transmits to the second circuit image data of the vertical light-shielded region and unprocessed image data of the second region, and the second circuit receives the transmitted image data, and applies the predetermined image processing to the received image data by using the received image data of the vertical light-shielded region.
Abstract:
A radiation detector (radiation sensor 1) includes a sensor element (3) and an amplifying transistor (5), reads a current value that flows between the drain and the source based on a change in voltage of a gate electrode of the amplifying transistor (5), and also includes a reset reading circuit (10) that includes an amplifier (11) and reads the current value, and the reset reading circuit (10) outputs an initial voltage to the gate electrode so that the current value becomes a value that is determined in advance.
Abstract:
A measurement circuit for a resistive sensor comprises an integrator of information representative of the difference between a current passing through the sensor and a first reference current, and a circuit for making the output of the integrator depend on a reference level.
Abstract:
A sequence of control voltage levels are applied to a control signal line capacitively coupled to a floating diffusion node of a pixel to sequentially adjust a voltage level of the floating diffusion node. A pixel output signal representative of the voltage level of the floating diffusion node is compared with a reference voltage to identify a first control voltage level of the sequence of control voltage levels for which the voltage level of the floating diffusion node exceeds the reference voltage.
Abstract:
Disclosed herein is an image pickup circuit including: amplifying means for amplifying a charge corresponding to an amount of light received by a photodetector, and outputting a pixel signal; ramp signal generating means for generating a ramp signal whose voltage drops with a fixed slope from a predetermined initial voltage; and comparing means for comparing the pixel signal output by the amplifying means with the ramp signal output by the ramp signal generating means. A reference potential of the pixel signal output by the amplifying means and a reference potential of the ramp signal output by the ramp signal generating means are at a same level.
Abstract:
A system is provided for generating a ramping signal. The system includes a plurality of storage circuits each including an input and an output. The output of a previous storage circuit is connected to the input of a next storage circuit. The storage circuits are configured to propagate a first enable signal based on a first control signal. The system also includes a plurality of first current generating circuits. Each first current generating circuit is coupled to the output of a corresponding storage circuit to receive the propagated first enable signal. The first current generating circuits are configured to generate a first current signal based on the propagated first enable signal.
Abstract:
A photoelectric conversion device includes a pixel cell including a phototransistor, a reference cell including a reference transistor having a temperature characteristic identical to that of the phototransistor and having a fixed electrical state, an analog-to-digital converter that converts an analog output of the pixel cell into a digital output, a correction amount computation unit that computes a correction amount for the digital output of the analog-to-digital converter based on an output of the reference cell and a reference value, and a correction unit that corrects the digital output of the analog-to-digital converter based on the correction amount.