公开(公告)号：US09749566B2

公开(公告)日：2017-08-29

申请号：US14641683

申请日：2015-03-09

申请人： Kazuhiro Yoneda ,  Hirofumi Watanabe ,  Takaaki Negoro ,  Katsuhiko Aisu ,  Yasukazu Nakatani ,  Katsuyuki Sakurano

发明人： Kazuhiro Yoneda ,  Hirofumi Watanabe ,  Takaaki Negoro ,  Katsuhiko Aisu ,  Yasukazu Nakatani ,  Katsuyuki Sakurano

IPC分类号： H04N5/374 ,  H04N5/355

CPC分类号： H04N5/374 ,  H04N5/35527

摘要： An imaging device includes a photoelectric conversion element which photoelectrically converts incident light and generates a charge, accumulates and amplifies the charge, and outputs a photocurrent, wherein a level of an output signal when a charge which is accumulated in the photoelectric conversion element is outputted over a saturated amount of accumulable charge includes a level of an output signal of a charge of a photocurrent of DC component which is generated in the photoelectric conversion element and outputted during a readout time when the charge which is accumulated in the photoelectric conversion element is outputted.

公开(公告)号：US20160195431A1

公开(公告)日：2016-07-07

申请号：US14978172

申请日：2015-12-22

申请人： Katsuhiko Aisu ,  Hirofumi Watanabe ,  Takaaki Negoro ,  Yoshinori Ueda ,  Yasukazu Nakatani ,  Kazuhiro Yoneda ,  Katsuyuki Sakurano

发明人： Katsuhiko Aisu ,  Hirofumi Watanabe ,  Takaaki Negoro ,  Yoshinori Ueda ,  Yasukazu Nakatani ,  Kazuhiro Yoneda ,  Katsuyuki Sakurano

IPC分类号： G01J1/44

CPC分类号： G01J1/44 ,  G01J2001/444 ,  G01J2001/4473 ,  H04N5/361 ,  H04N5/3655 ,  H04N5/378

摘要： A photoelectric conversion device includes a pixel cell including a phototransistor, a reference cell including a reference transistor having a temperature characteristic identical to that of the phototransistor and having a fixed electrical state, an analog-to-digital converter that converts an analog output of the pixel cell into a digital output, a correction amount computation unit that computes a correction amount for the digital output of the analog-to-digital converter based on an output of the reference cell and a reference value, and a correction unit that corrects the digital output of the analog-to-digital converter based on the correction amount.

摘要翻译： 光电转换装置包括具有光电晶体管的像素单元，具有与光电晶体管的温度特性相同的具有固定电气状态的参考晶体管的参考晶体管，转换模拟输出的模数转换器 像素单元转换为数字输出;校正量计算单元，其基于所述参考单元的输出和参考值计算所述模数转换器的数字输出的校正量，以及校正单元， 基于校正量的模数转换器的输出。

公开(公告)号：US20150171129A1

公开(公告)日：2015-06-18

申请号：US14560037

申请日：2014-12-04

申请人： Katsuyuki Sakurano ,  Takaaki Negoro ,  Katsuhiko Aisu ,  Kazuhiro Yoneda ,  Yasukazu Nakatani ,  Hirofumi Watanabe

发明人： Katsuyuki Sakurano ,  Takaaki Negoro ,  Katsuhiko Aisu ,  Kazuhiro Yoneda ,  Yasukazu Nakatani ,  Hirofumi Watanabe

IPC分类号： H01L27/146 ,  H01L31/113

CPC分类号： H01L31/1136 ,  H01L27/14614 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14638 ,  H01L27/14643 ,  H01L27/14689

摘要： A semiconductor device and a method of manufacturing a semiconductor device are disclosed. The method includes forming a trench, in a vertical direction of a semiconductor substrate having a plurality of photoelectric converting elements arranged on the semiconductor device, at positions between the photoelectric converting elements that are next to each other, forming a first conductive-material layer in and above the trench by implanting a first conductive material into the trench after an oxide film is formed on an inner wall of the trench, forming a first conductor by removing the first conductive-material layer excluding a first conductive portion of the first conductive-material layer implanted into the trench, and forming an upper gate electrode above the first conductor, the upper gate electrode configured to be conductive with the first conductor. The semiconductor device includes a semiconductor substrate, an image sensor, a trench, a first conductor, and an upper gate electrode.

摘要翻译： 公开了半导体器件和制造半导体器件的方法。 该方法包括在彼此相邻的光电转换元件之间的位置处形成在具有布置在半导体器件上的多个光电转换元件的半导体衬底的垂直方向上形成沟槽，形成第一导电材料层 并且在沟槽的内壁上形成氧化膜之后，通过将第一导电材料注入到沟槽中并在沟槽之上形成第一导体，通过除去除第一导电材料的第一导电部分之外的第一导电材料层 层，并且在第一导体上形成上栅电极，上栅电极被配置为与第一导体导电。 半导体器件包括半导体衬底，图像传感器，沟槽，第一导体和上部栅电极。

公开(公告)号：US20140163159A1

公开(公告)日：2014-06-12

申请号：US14236134

申请日：2012-08-29

申请人： Yasukazu Nakatani ,  Toshio Miyatani ,  Fumiko Shigenai ,  Toshiyuki Kinoshita

发明人： Yasukazu Nakatani ,  Toshio Miyatani ,  Fumiko Shigenai ,  Toshiyuki Kinoshita

IPC分类号： C09D5/03

CPC分类号： C09D5/031 ,  C08F14/18 ,  C08F214/262 ,  C08J3/12 ,  C08J2327/12 ,  C09D127/18

摘要： The present invention aims to provide a fluorine-containing polymer powder that is environmentally less harmful and forms a sufficiently smooth film without impairing the properties of the fluorine-containing polymers. The present invention relates to a fluorine-containing polymer powder including a fluorine-containing polymer prepared by suspension polymerization, which contains less than 0.1 ppm of a fluorine-containing surfactant and has an average particle size of not less than 1 μm and less than 100 μm and a bulk density of 0.90 to 1.50 g/cm3.

摘要翻译： 本发明的目的在于提供一种对环境无害的氟聚合物粉末，并且在不损害含氟聚合物的性能的前提下形成足够光滑的膜。 本发明涉及包含含悬浮聚合制备的含氟聚合物的含氟聚合物粉末，其含有少于0.1ppm的含氟表面活性剂，其平均粒度不小于1μm且小于100 μm，堆积密度为0.90〜1.50g / cm3。

公开(公告)号：US08404782B2

公开(公告)日：2013-03-26

申请号：US12833422

申请日：2010-07-09

申请人： Yasukazu Nakatani ,  Toshio Miyatani ,  Koichiro Ogita

发明人： Yasukazu Nakatani ,  Toshio Miyatani ,  Koichiro Ogita

IPC分类号： C08F6/00

CPC分类号： C08J3/12 ,  C08F8/20 ,  C08J3/126 ,  C08J2327/12 ,  C08L27/24 ,  C08L2205/02 ,  C09D127/24 ,  C08L2666/04

摘要： A stabilized fluorine-containing polymer powder having an average particle size of 5 to 100 μm is prepared by contacting a fluorine-containing polymer powder, which is prepared by milling the fluorine-containing polymer and removing fine particles, fibrous particles and coarse particles by classification, with a fluorinating agent so that the total number of unstable terminal groups is decreased to 7 to 50 per 106 carbon atoms. This is a fluorine-containing polymer powder achieved a high coating efficiency in an electrostatic coating method and provides a film having good properties such as heat resistance, non-tackiness, low frictional property, chemical resistance, etc.

摘要翻译： 通过使通过研磨含氟聚合物制备的含氟聚合物粉末与通过分级除去细颗粒，纤维状颗粒和粗颗粒来除去的含氟聚合物粉末来制备平均粒径为5〜100μm的稳定的含氟聚合物粉末 ，使得不稳定末端基团的总数减少到每10-60个碳原子7至50个。 这是一种在静电涂覆方法中获得高涂层效率的含氟聚合物粉末，并且提供具有良好性能如耐热性，非粘性，低摩擦性，耐化学性等的膜。

公开(公告)号：US20100273948A1

公开(公告)日：2010-10-28

申请号：US12833422

申请日：2010-07-09

申请人： Yasukazu NAKATANI ,  Toshio MIYATANI ,  Koichiro OGITA

发明人： Yasukazu NAKATANI ,  Toshio MIYATANI ,  Koichiro OGITA

IPC分类号： C08L27/18 ,  C08F8/18

CPC分类号： C08J3/12 ,  C08F8/20 ,  C08J3/126 ,  C08J2327/12 ,  C08L27/24 ,  C08L2205/02 ,  C09D127/24 ,  C08L2666/04

摘要： A stabilized fluorine-containing polymer powder having an average particle size of 5 to 100 μm is prepared by contacting a fluorine-containing polymer powder, which is prepared by milling the fluorine-containing polymer and removing fine particles, fibrous particles and coarse particles by classification, with a fluorinating agent so that the total number of unstable terminal groups is decreased to 7 to 50 per 106 carbon atoms. This is a fluorine-containing polymer powder achieved a high coating efficiency in an electrostatic coating method and provides a film having good properties such as heat resistance, non-tackiness, low frictional property, chemical resistance, etc.

摘要翻译： 通过使通过研磨含氟聚合物制备的含氟聚合物粉末与分离除去细颗粒，纤维颗粒和粗颗粒的含氟聚合物粉末接触来制备平均粒径为5至100μm的稳定的含氟聚合物粉末 ，使得不稳定末端基团的总数减少到每10-60个碳原子7至50个。 这是一种在静电涂覆方法中获得高涂层效率的含氟聚合物粉末，并且提供具有良好性能如耐热性，非粘性，低摩擦性，耐化学性等的膜。

公开(公告)号：US20090035582A1

公开(公告)日：2009-02-05

申请号：US11908200

申请日：2006-03-09

申请人： Yasukazu Nakatani ,  Toshirou Miura ,  Yasuhiko Sawada ,  Hiroshi Torii

发明人： Yasukazu Nakatani ,  Toshirou Miura ,  Yasuhiko Sawada ,  Hiroshi Torii

IPC分类号： B32B27/00 ,  C08L27/12 ,  C08L39/06 ,  C08L29/04

CPC分类号： C08J3/05 ,  C08J2327/18 ,  C08L27/18 ,  C08L29/04 ,  C08L29/10 ,  C08L33/02 ,  C08L39/06 ,  C08L71/02 ,  C09D127/18 ,  H05K1/034 ,  Y10T428/25 ,  Y10T428/254 ,  Y10T428/3154 ,  Y10T428/31544 ,  Y10T442/20 ,  Y10T442/2787 ,  Y10T442/2934 ,  C08L2666/02

摘要： The invention provides a PTFE-containing aqueous dispersion composition which is excellent in mechanical stability and scarcely allows the formation of agglomerates due to fibrillation of the PTFE resin during transportation or processing thereof. This invention is a polytetrafluoroethylene-containing aqueous dispersion composition comprising a polytetrafluoroethylene resin (A), a hydrocarbon-derived nonionic compound (B) and a water-soluble high-molecular compound (C) having no oxygen atom in the main chain thereof.

摘要翻译： 本发明提供一种PTFE含水分散体组合物，其机械稳定性优异，并且在运输或加工过程中几乎不能由于PTFE树脂的原纤维形成聚集体。 本发明是一种含有聚四氟乙烯的水性分散体组合物，其包含聚四氟乙烯树脂（A），烃衍生的非离子化合物（B）和在其主链中不含氧原子的水溶性高分子化合物（C）。

公开(公告)号：US07468403B2

公开(公告)日：2008-12-23

申请号：US10536432

申请日：2003-10-06

申请人： Yasukazu Nakatani ,  Kenji Ichikawa

发明人： Yasukazu Nakatani ,  Kenji Ichikawa

IPC分类号： C08L1/00

CPC分类号： C08F6/20 ,  C08F6/16 ,  C08F14/18 ,  C08F14/26 ,  C08L27/12 ,  C08F2/22

摘要： The present invention provides a method of purifying an aqueous fluoropolymer emulsion by which fluorine-containing surfactants can be removed without lowering the dispersibility of the aqueous fluoropolymer dispersions.The present invention provides a method of purifying an aqueous fluoropolymer emulsion comprising; purifying an aqueous fluoropolymer emulsion by a specific technique of concentrationwherein the aqueous fluoropolymer emulsion comprises a fluoropolymer and a fluorine-containing surfactant,said specific technique of concentration comprises concentration by phase separation, electric concentration and/or ion exchange concentration, andsaid concentration by phase separation, electric concentration and/or ion exchange concentration is carried out for removing the fluorine-containing surfactant.

摘要翻译： 本发明提供一种纯化含氟聚合物乳液的方法，其中可以除去含氟表面活性剂，而不降低含氟聚合物水分散体的分散性。 本发明提供一种纯化含氟聚合物含水乳液的方法，其包括： 通过特定的浓缩技术纯化含氟聚合物乳液，其中含氟聚合物乳液包含含氟聚合物和含氟表面活性剂，所述具体的浓缩技术包括通过相分离，电浓度和/或离子交换浓度浓缩，所述浓度由 进行相分离，电浓度和/或离子交换浓度以除去含氟表面活性剂。

公开(公告)号：US10078010B2

公开(公告)日：2018-09-18

申请号：US14978172

申请日：2015-12-22

申请人： Katsuhiko Aisu ,  Hirofumi Watanabe ,  Takaaki Negoro ,  Yoshinori Ueda ,  Yasukazu Nakatani ,  Kazuhiro Yoneda ,  Katsuyuki Sakurano

发明人： Katsuhiko Aisu ,  Hirofumi Watanabe ,  Takaaki Negoro ,  Yoshinori Ueda ,  Yasukazu Nakatani ,  Kazuhiro Yoneda ,  Katsuyuki Sakurano

IPC分类号： G01J1/44 ,  H04N5/361 ,  H04N5/365 ,  H04N5/378

CPC分类号： G01J1/44 ,  G01J2001/444 ,  G01J2001/4473 ,  H04N5/361 ,  H04N5/3655 ,  H04N5/378

摘要： A photoelectric conversion device includes a pixel cell including a phototransistor, a reference cell including a reference transistor having a temperature characteristic identical to that of the phototransistor and having a fixed electrical state, an analog-to-digital converter that converts an analog output of the pixel cell into a digital output, a correction amount computation unit that computes a correction amount for the digital output of the analog-to-digital converter based on an output of the reference cell and a reference value, and a correction unit that corrects the digital output of the analog-to-digital converter based on the correction amount.

公开(公告)号：US09923019B2

公开(公告)日：2018-03-20

申请号：US14935973

申请日：2015-11-09

申请人： Takaaki Negoro ,  Yoshinori Ueda ,  Katsuyuki Sakurano ,  Yasukazu Nakatani ,  Kazuhiro Yoneda ,  Katsuhiko Aisu

发明人： Takaaki Negoro ,  Yoshinori Ueda ,  Katsuyuki Sakurano ,  Yasukazu Nakatani ,  Kazuhiro Yoneda ,  Katsuhiko Aisu

IPC分类号： H01L31/0224 ,  H04N5/378 ,  H04N5/361 ,  H01L31/0352 ,  H01L31/18 ,  H01L27/146

CPC分类号： H01L27/14681 ,  H01L27/14612

摘要： A semiconductor device for converting incident light into an electric current includes a semiconductor substrate; an electrode embedded in the semiconductor substrate; an insulation film contacting the electrode in the semiconductor substrate; a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type and a third semiconductor region of the first conductivity type, formed sequentially in a depth direction from a side of a front face of the semiconductor substrate; and a fourth semiconductor region of the second conductivity type contacting the insulation film and the second semiconductor region. An impurity concentration of the fourth semiconductor region is greater than an impurity concentration of the second semiconductor region.