公开(公告)号：US10020290B2

公开(公告)日：2018-07-10

申请号：US15662764

申请日：2017-07-28

申请人： Yeong-Hwan Choe ,  Tae-Joo Hwang ,  Tae-Hong Min ,  Young-Kun Jee ,  Sang-Uk Han

发明人： Yeong-Hwan Choe ,  Tae-Joo Hwang ,  Tae-Hong Min ,  Young-Kun Jee ,  Sang-Uk Han

IPC分类号： H01L25/065 ,  H01L23/48 ,  H01L25/00 ,  H01L23/00

CPC分类号： H01L25/0657 ,  H01L23/481 ,  H01L24/05 ,  H01L24/06 ,  H01L24/10 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/71 ,  H01L24/81 ,  H01L25/50 ,  H01L2224/06156 ,  H01L2224/10125 ,  H01L2224/131 ,  H01L2224/14156 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16238 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/75305 ,  H01L2224/81007 ,  H01L2224/81191 ,  H01L2924/15311 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/014

摘要： A semiconductor device includes at least first and second semiconductor chips stacked on each other along a first direction, at least one through-silicon-via (TSV) through at least the first semiconductor chip of the first and second semiconductor chips, a contact pad on the at least one TSV of the first semiconductor chip, the contact pad electrically connecting the TSV of the first semiconductor chip to the second semiconductor chip, and a plurality of dummy pads on the first semiconductor chip, the plurality of dummy pads being spaced apart from each other and from the contact pad along a second direction, and the dummy pads having same heights as the contact pads as measured between respective top and bottom surfaces along the first direction.

公开(公告)号：US08981532B2

公开(公告)日：2015-03-17

申请号：US13672115

申请日：2012-11-08

申请人： Elpida Memory, Inc.

发明人： Koji Torii

IPC分类号： H01L23/48 ,  H01L21/683 ,  H01L21/768 ,  H01L23/31 ,  H01L23/00

CPC分类号： H01L23/481 ,  H01L21/6835 ,  H01L21/7682 ,  H01L21/76898 ,  H01L23/3135 ,  H01L23/49827 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68372 ,  H01L2224/0401 ,  H01L2224/05571 ,  H01L2224/11002 ,  H01L2224/1146 ,  H01L2224/13021 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/13025 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/14156 ,  H01L2224/14181 ,  H01L2224/16146 ,  H01L2224/81193 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2224/05552

摘要： In a semiconductor device, the thickness of an insulating film formed in a through hole is reduced, while an annular groove having an insulating material embedded therein is provided so as to ensure a sufficient total thickness of the insulator, whereby a through silicon via is provided with an insulating ring which is improved in both processability and functionality.

摘要翻译： 在半导体器件中，形成在通孔中的绝缘膜的厚度减小，而设置有嵌入其中的绝缘材料的环形槽以确保绝缘体的足够的总厚度，由此提供贯通硅通孔 具有在加工性和功能性方面得到改善的绝缘环。

公开(公告)号：US08697546B2

公开(公告)日：2014-04-15

申请号：US13461616

申请日：2012-05-01

申请人： Kenta Ono

发明人： Kenta Ono

IPC分类号： H01L21/30

CPC分类号： H01L21/304 ,  H01L21/30625 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/76898 ,  H01L23/3128 ,  H01L23/481 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L25/0657 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2224/0345 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05166 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/11002 ,  H01L2224/11009 ,  H01L2224/11462 ,  H01L2224/11622 ,  H01L2224/11849 ,  H01L2224/13009 ,  H01L2224/13021 ,  H01L2224/13023 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/14156 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81815 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14335 ,  H01L2924/1434 ,  H01L2924/1436 ,  H01L2924/1437 ,  H01L2924/1438 ,  H01L2924/15311 ,  H01L2924/01047 ,  H01L2924/00 ,  H01L2224/05552

摘要： A method of manufacturing a semiconductor device, comprising bonding a first principal surface of a substrate to a supporting substrate through a light-to-heat conversion film, and removing a portion of the light-to-heat conversion film exposed on the supporting substrate. A method of manufacturing a semiconductor device, comprising forming a light-to-heat conversion film on a supporting substrate, bonding a semiconductor substrate to the supporting substrate, so that the light-to-heat conversion film extends outside the semiconductor substrate, performing an anti-contamination treatment on the light-to-heat conversion film, and separating the supporting substrate and the semiconductor substrate from each other.

摘要翻译： 一种制造半导体器件的方法，包括通过光 - 热转换膜将衬底的第一主表面粘合到支撑衬底，以及去除在支撑衬底上暴露的光 - 热转换膜的一部分。 一种制造半导体器件的方法，包括在支撑衬底上形成光 - 热转换膜，将半导体衬底接合到支撑衬底，使得光 - 热转换膜延伸到半导体衬底外部，执行 对光热转换膜进行防污处理，并将支撑基板和半导体基板彼此分离。

公开(公告)号：US20130302941A1

公开(公告)日：2013-11-14

申请号：US13948025

申请日：2013-07-22

申请人： Micron Technology, Inc.

发明人： Kevin W. Hutto

IPC分类号： H01L23/00

CPC分类号： H01L21/00 ,  B33Y80/00 ,  H01L21/56 ,  H01L21/563 ,  H01L23/13 ,  H01L24/96 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/14156 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： Microelectronic workpieces and methods for manufacturing microelectronic devices using such workpieces are disclosed. In one embodiment, a microelectronic assembly comprises a support member having a first side and a projection extending away from the first side. The assembly also includes a plurality of conductive traces at the first side of the support member. Some of the conductive traces include bond sites carried by the projection and having an outer surface at a first distance from the first side of the support member. The assembly further includes a protective coating deposited over the first side of the support member and at least a portion of the conductive traces. The protective coating has a major outer surface at a second distance from the first side of the support member. The second distance is approximately the same as the first distance such that the outer surface of the protective coating is generally co-planar with the outer surface of the bond sites carried by the projection. In several embodiments, a microelectronic die can be coupled to the corresponding bond sites carried by the projection in a flip-chip configuration.

摘要翻译： 公开了微电子工件和使用这种工件制造微电子器件的方法。 在一个实施例中，微电子组件包括具有第一侧和远离第一侧延伸的突起的支撑构件。 组件还包括在支撑构件的第一侧的多个导电迹线。 一些导电迹线包括由突起承载的结合位置，并且具有距离支撑构件的第一侧第一距离的外表面。 组件还包括沉积在支撑构件的第一侧上的保护涂层和导电迹线的至少一部分。 保护涂层具有与支撑构件的第一侧相距第二距离的主外表面。 第二距离与第一距离大致相同，使得保护涂层的外表面通常与由突起承载的粘结位置的外表面共面。 在几个实施例中，微电子管芯可以以倒装芯片配置耦合到由突起承载的对应的接合位置。

公开(公告)号：US20120295415A1

公开(公告)日：2012-11-22

申请号：US13461616

申请日：2012-05-01

申请人： Kenta ONO

发明人： Kenta ONO

IPC分类号： H01L21/30

CPC分类号： H01L21/304 ,  H01L21/30625 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/76898 ,  H01L23/3128 ,  H01L23/481 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L25/0657 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2224/0345 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05166 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/11002 ,  H01L2224/11009 ,  H01L2224/11462 ,  H01L2224/11622 ,  H01L2224/11849 ,  H01L2224/13009 ,  H01L2224/13021 ,  H01L2224/13023 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/14156 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81815 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14335 ,  H01L2924/1434 ,  H01L2924/1436 ,  H01L2924/1437 ,  H01L2924/1438 ,  H01L2924/15311 ,  H01L2924/01047 ,  H01L2924/00 ,  H01L2224/05552

摘要： A method of manufacturing a semiconductor device, comprising bonding a first principal surface of a substrate to a supporting substrate through a light-to-heat conversion film, and removing a portion of the light-to-heat conversion film exposed on the supporting substrate. A method of manufacturing a semiconductor device, comprising forming a light-to-heat conversion film on a supporting substrate, bonding a semiconductor substrate to the supporting substrate, so that the light-to-heat conversion film extends outside the semiconductor substrate, performing an anti-contamination treatment on the light-to-heat conversion film, and separating the supporting substrate and the semiconductor substrate from each other.

摘要翻译： 一种制造半导体器件的方法，包括通过光 - 热转换膜将衬底的第一主表面粘合到支撑衬底，以及去除在支撑衬底上暴露的光 - 热转换膜的一部分。 一种制造半导体器件的方法，包括在支撑衬底上形成光 - 热转换膜，将半导体衬底接合到支撑衬底，使得光 - 热转换膜延伸到半导体衬底外部，执行 对光热转换膜进行防污处理，并将支撑基板和半导体基板彼此分离。

公开(公告)号：US20100052111A1

公开(公告)日：2010-03-04

申请号：US12546109

申请日：2009-08-24

申请人： Yukihiro Urakawa

发明人： Yukihiro Urakawa

IPC分类号： H01L23/48

CPC分类号： H01L25/0657 ,  H01L23/481 ,  H01L23/49816 ,  H01L24/16 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L25/18 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/13025 ,  H01L2224/14151 ,  H01L2224/14156 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16227 ,  H01L2224/17181 ,  H01L2224/32145 ,  H01L2224/32146 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73207 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A stacked chip device includes a first chip having a first function, and a second chip having a second function which is different from the first function, which is stacked on the first chip. The first chip is a through-silicon-via chip which is comprised of a first semiconductor substrate having first and second surfaces, a first semiconductor integrated circuit which is provided on the first surface of the first semiconductor substrate, a first conductive layer connecting to the first semiconductor integrated circuit, which goes through the first surface of the first semiconductor substrate to the second surface of the first semiconductor substrate, and a second conductive layer not connecting to the first semiconductor integrated circuit, which goes through the first surface of the first semiconductor substrate to the second surface of the first semiconductor substrate. The first and second conductive layers have the same shape and the same structure.

摘要翻译： 堆叠式芯片装置包括具有第一功能的第一芯片和具有与第一功能不同的第二功能的第二芯片，该第二功能堆叠在第一芯片上。 第一芯片是通过硅通孔芯片，其包括具有第一和第二表面的第一半导体衬底，设置在第一半导体衬底的第一表面上的第一半导体集成电路，连接到第一半导体层的第一导电层 第一半导体集成电路，其穿过第一半导体衬底的第一表面到第一半导体衬底的第二表面;以及第二导电层，其不连接到第一半导体集成电路，其穿过第一半导体的第一表面 衬底到第一半导体衬底的第二表面。 第一和第二导电层具有相同的形状和相同的结构。

公开(公告)号：US10083937B2

公开(公告)日：2018-09-25

申请号：US15354467

申请日：2016-11-17

申请人： Micron Technology, Inc.

发明人： Anthony D. Veches ,  William R. Stephenson ,  Walter L. Moden

IPC分类号： H01L25/065 ,  H01L23/00 ,  H01L25/00 ,  H01L23/495 ,  H01L21/02 ,  H01L23/31 ,  H01L21/20 ,  H01L27/1157 ,  H01L23/488

CPC分类号： H01L25/0657 ,  H01L21/0228 ,  H01L21/2007 ,  H01L23/3114 ,  H01L23/3142 ,  H01L23/488 ,  H01L23/4951 ,  H01L23/4952 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/81 ,  H01L24/85 ,  H01L24/92 ,  H01L25/50 ,  H01L27/1157 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/0615 ,  H01L2224/06156 ,  H01L2224/09517 ,  H01L2224/1134 ,  H01L2224/131 ,  H01L2224/1411 ,  H01L2224/1415 ,  H01L2224/14156 ,  H01L2224/16148 ,  H01L2224/17177 ,  H01L2224/17517 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/48108 ,  H01L2224/48149 ,  H01L2224/48227 ,  H01L2224/48477 ,  H01L2224/49175 ,  H01L2224/73204 ,  H01L2224/73207 ,  H01L2224/73253 ,  H01L2224/8112 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/85186 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/92127 ,  H01L2224/92163 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2924/00014 ,  H01L2924/014

摘要： Semiconductor device packages include first and second semiconductor dice in a facing relationship. At least one group of solder bumps is substantially along a centerline between the semiconductor dice and operably coupled with integrated circuitry of the first and second semiconductor dice. Another group of solder bumps is laterally offset from the centerline and operably coupled only with integrated circuitry of the first semiconductor die. A further group of solder bumps is laterally offset from the centerline and operably coupled only with integrated circuitry of the second semiconductor die. Methods of forming semiconductor device packages include aligning first and second semiconductor dice with active surfaces facing each other, the first and second semiconductor dice each including bond pads along a centerline thereof and additional bond pads laterally offset from the centerline thereof.

公开(公告)号：US09721926B2

公开(公告)日：2017-08-01

申请号：US14825403

申请日：2015-08-13

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Yeong-Hwan Choe ,  Tae-Joo Hwang ,  Tae-Hong Min ,  Young-Kun Jee ,  Sang-Uk Han

IPC分类号： H01L25/065 ,  H01L25/00 ,  H01L23/48 ,  H01L23/00

CPC分类号： H01L25/0657 ,  H01L23/481 ,  H01L24/05 ,  H01L24/06 ,  H01L24/10 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/71 ,  H01L24/81 ,  H01L25/50 ,  H01L2224/06156 ,  H01L2224/10125 ,  H01L2224/131 ,  H01L2224/14156 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16238 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/75305 ,  H01L2224/81007 ,  H01L2224/81191 ,  H01L2924/15311 ,  H01L2924/00 ,  H01L2924/014

摘要： A semiconductor device includes at least first and second semiconductor chips stacked on each other along a first direction, at least one silicon-through-via (TSV) through at least the first semiconductor chip of the first and second semiconductor chips, a contact pad on the at least one TSV of the first semiconductor chip, the contact pad electrically connecting the TSV of the first semiconductor chip to the second semiconductor chip, and a plurality of dummy pads on the first semiconductor chip, the plurality of dummy pads being spaced apart from each other and from the contact pad along a second direction, and the dummy pads having same heights as the contact pads as measured between respective top and bottom surfaces along the first direction.

公开(公告)号：US20160064357A1

公开(公告)日：2016-03-03

申请号：US14825403

申请日：2015-08-13

申请人： Yeong-Hwan CHOE ,  Tae-Joo HWANG ,  Tae-Hong MIN ,  Young-Kun JEE ,  Sang-Uk HAN

发明人： Yeong-Hwan CHOE ,  Tae-Joo HWANG ,  Tae-Hong MIN ,  Young-Kun JEE ,  Sang-Uk HAN

IPC分类号： H01L25/065 ,  H01L23/48 ,  H01L25/00

CPC分类号： H01L25/0657 ,  H01L23/481 ,  H01L24/05 ,  H01L24/06 ,  H01L24/10 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/71 ,  H01L24/81 ,  H01L25/50 ,  H01L2224/06156 ,  H01L2224/10125 ,  H01L2224/131 ,  H01L2224/14156 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16238 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/75305 ,  H01L2224/81007 ,  H01L2224/81191 ,  H01L2924/15311 ,  H01L2924/00 ,  H01L2924/014

摘要： A semiconductor device includes at least first and second semiconductor chips stacked on each other along a first direction, at least one silicon-through-via (TSV) through at least the first semiconductor chip of the first and second semiconductor chips, a contact pad on the at least one TSV of the first semiconductor chip, the contact pad electrically connecting the TSV of the first semiconductor chip to the second semiconductor chip, and a plurality of dummy pads on the first semiconductor chip, the plurality of dummy pads being spaced apart from each other and from the contact pad along a second direction, and the dummy pads having same heights as the contact pads as measured between respective top and bottom surfaces along the first direction.

摘要翻译： 半导体器件至少包括沿着第一方向彼此堆叠的第一和第二半导体芯片，至少一个硅通孔（TSV），至少通过第一和第二半导体芯片的第一半导体芯片，接触焊盘 所述第一半导体芯片的所述至少一个TSV，所述接触焊盘将所述第一半导体芯片的TSV电连接到所述第二半导体芯片，以及所述第一半导体芯片上的多个虚拟焊盘，所述多个虚拟焊盘与所述第一半导体芯片间隔开 彼此并且沿着第二方向从接触焊盘接合，并且虚拟焊盘具有与沿着第一方向在相应的顶部和底部表面之间测量的接触焊盘相同的高度。

公开(公告)号：US09048221B2

公开(公告)日：2015-06-02

申请号：US13671033

申请日：2012-11-07

申请人： PS4 Luxco S.a.r.l.

发明人： Yu Hasegawa ,  Mitsuaki Katagiri

IPC分类号： H01L23/498 ,  H01L23/48 ,  H01L21/56 ,  H01L25/065 ,  H01L23/31 ,  H01L23/00

CPC分类号： H01L23/481 ,  H01L21/561 ,  H01L21/563 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49838 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/81 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/05554 ,  H01L2224/05567 ,  H01L2224/0557 ,  H01L2224/05599 ,  H01L2224/06102 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/13005 ,  H01L2224/13014 ,  H01L2224/13021 ,  H01L2224/13023 ,  H01L2224/13025 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/1403 ,  H01L2224/14135 ,  H01L2224/1415 ,  H01L2224/14155 ,  H01L2224/14156 ,  H01L2224/14177 ,  H01L2224/14181 ,  H01L2224/14517 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16237 ,  H01L2224/17517 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/83102 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/014 ,  H01L2924/206 ,  H01L2224/13099 ,  H01L2224/05099 ,  H01L2224/05552

摘要： A device has a first substrate having a first surface; a first electrode pad arranged on the first surface of the first substrate; a first insulator film provided on the first surface of the first substrate so that the first electrode pad is exposed; a first bump electrode provided on the first electrode pad and having a first diameter; and a second bump electrode provided on the first insulator film and having a second diameter smaller than the first diameter.

摘要翻译： 一种器件具有第一衬底，其具有第一表面; 布置在第一基板的第一表面上的第一电极焊盘; 设置在第一基板的第一表面上以使第一电极焊盘露出的第一绝缘膜; 设置在第一电极焊盘上并具有第一直径的第一凸起电极; 以及设置在所述第一绝缘膜上并且具有小于所述第一直径的第二直径的第二凸起电极。