Polymer thin film, its production method, binder for bio chip, bio chip, and its production method
    7.
    发明授权
    Polymer thin film, its production method, binder for bio chip, bio chip, and its production method 有权
    聚合物薄膜,其生产方法,生物芯片用粘合剂,生物芯片及其生产方法

    公开(公告)号:US06855419B2

    公开(公告)日:2005-02-15

    申请号:US10145738

    申请日:2002-05-16

    Abstract: This invention attempts to provide a method for producing a DNA chip which can be accomplished in simple steps at a low cost, and wherein use of the resulting DNA chip reduces loss of probes and sample substances in the washing step enabling efficient use of such probe and sample. This invention also attempts to provide a DNA chip produced by such method. Accordingly, a method for producing a DNA chip comprising a substrate and a DNA-binding layer formed on the substrate wherein said DNA-binding layer is a diamond like film having a DNA-binding group is provided, and this method comprises the steps of: reducing pressure of a vacuum chamber to a predetermined degree of vacuum; feeding the chamber with a gas which is the source of said diamond like film; feeding the chamber with a gas which is the source of nitrogen; and forming the diamond like film having a DNA-binding group on the substrate by CVD. Also provided is the DNA chip produced by such method.

    Abstract translation: 本发明试图提供可以以简单的步骤以低成本实现的DNA芯片的制造方法,其中使用所得到的DNA芯片减少洗涤步骤中的探针和样品物质的损失,从而有效地利用这种探针, 样品。 本发明还试图提供通过这种方法制备的DNA芯片。 因此,提供了包含底物和DNA结合层的DNA芯片的制造方法,其中所述DNA结合层是具有DNA结合基团的类金刚石膜,该方法包括以下步骤: 将真空室的压力降低到预定的真空度; 用作为所述金刚石膜的来源的气体供给室; 用作为氮源的气体供给室; 并通过CVD在基板上形成具有DNA结合基团的金刚石膜。 还提供了通过这种方法制备的DNA芯片。

    Porous low E (<2.0) thin films by transport co-polymerization
    8.
    发明申请
    Porous low E (<2.0) thin films by transport co-polymerization 失效
    通过运输共聚制成多孔低E(<2.0)薄膜

    公开(公告)号:US20030072947A1

    公开(公告)日:2003-04-17

    申请号:US10207652

    申请日:2002-07-29

    Abstract: Methods and products of Transport co-polymerization (nullTCPnull) that are useful for preparations of low Dielectric Constant (nullnullnull) thin films are disclosed. Transport co-polymerization (nullTCPnull) of reactive intermediates that are generated from a first precursor with a general structural formula (Z)mnullArnull(CXnullXnullY)n (VI) with a second reactive intermediate that is generated from a cage compound (e.g. Fullerenes, Methylsilsesquioxane, Hydrosilsesquioxane, and Adamantanyl) or a cyclic-compounds (e.g. Cyclo-Siloxanes and 2,2-Paracyclophanes) results in co-polymer films that are useful for making porous low null (null2.0) thin films. The porous thin films of this invention consist of nano-pores with uniform pore distribution thus retain high rigidity thus are suitable for manufacturing of future ICs using copper as conductor. Preparation methods and stabilization processes for low k co-polymers that consist of sp2CnullZ and HC-sp3CnullnullX bonds are also revealed. A preparation method is achieved by controlling the substrate temperature and feed rate of the major precursors. One stabilization process includes a post annealing of as-deposited co-polymer films under the presence of hydrogen under high temperatures. The reductive annealing of these films is conducted at temperatures from null20null C. to null50null C. to null20null C. to null50null C. of their Reversible Crystal Transformation (nullCRTnull) temperatures, then quenching the resulting films to null20null C. to null50null C. below their nullCRTnull temperatures. The reductive annealing is conducted before the as-deposited film was removed from a deposition system and still under the vacuum. nullRe-stabilizationnull processes of co-polymer surfaces that are exposed to reactive plasma etching are also disclosed; thus, further coating by barrier metal, cap layer or etch-stop layer can be safely applied.

    Abstract translation: 公开了用于制备低介电常数(“epsi”)薄膜的运输共聚(“TCP”)的方法和产品。 由具有一般结构式(Z)m-Ar-(CX'X'Y)n(VI)的第一前体产生的反应性中间体的传输共聚(“TCP”)与第二反应性中间体 由笼状化合物(例如富勒烯,甲基倍半硅氧烷,氢四倍半硅氧烷和金刚烷基)或环状化合物(例如环硅氧烷和2,2-对环磷酰胺)产生的共聚物膜可用于制备多孔低ε(< 2.0)薄膜。 本发明的多孔薄膜由具有均匀孔分布的纳米孔组成,因此保持高刚性,因此适用于使用铜作为导体的未来IC的制造。 还显示了由sp2C-Z和HC-sp3Calpha-X键组成的低k共聚物的制备方法和稳定方法。 通过控制主要前体的基板温度和进料速率来实现制备方法。 一种稳定化方法包括在氢气存在下在高温下对沉积的共聚物膜进行后退火。 这些膜的还原退火在其可逆晶体转变(“CRT”)温度的-20℃至-50℃至+ 20℃至+ 50℃的温度下进行,然后淬灭所得 在-20℃至-50℃的温度下低于它们的“CRT”温度。 还原退火在沉积膜从沉积系统中移除之前仍然在真空下进行。 还公开了暴露于反应性等离子体蚀刻的共聚物表面的“再稳定化”工艺; 因此,可以安全地施加通过阻挡金属,盖层或蚀刻停止层的进一步涂覆。

    Polymer thin film, its production method, binder for bio chip, bio chip, and its production method
    9.
    发明申请
    Polymer thin film, its production method, binder for bio chip, bio chip, and its production method 有权
    聚合物薄膜,其生产方法,生物芯片用粘合剂,生物芯片及其生产方法

    公开(公告)号:US20030012956A1

    公开(公告)日:2003-01-16

    申请号:US10145738

    申请日:2002-05-16

    Abstract: This invention provides a polymer thin film which is useful as a substrate for immobilizing a histocompatibility-imparting agent, an immunosuppressive agent, a bioreaction suppressive agent, or the like, and which can be used in imparting biocompatibility; its production method; a binder for a bio chip wherein loss of probe and sample substances in the washing step has been reduced to realize efficient use of such probe and sample; and its production method. In the present invention, the starting material represented by the following structural formula (I) is evaporated and heated to bring the material into monomer form. The material is then introduced into a vacuum deposition chamber maintained at a predetermined degree of vacuum wherein the material is deposited and polymerized on a substrate to obtain the polymer thin film. This polymer thin film is also used in producing the bio chip. 1 wherein R11 and R12 independently represent nullCH2NH2 group or H, and at least one of the R11 and R12 is nullCH2NH2 group.

    Abstract translation: 本发明提供了可用作固定组织相容性赋予剂,免疫抑制剂,生物反应抑制剂等的基质的聚合物薄膜,其可用于赋予生物相容性; 其生产方式; 用于生物芯片的粘合剂,其中已经减少了洗涤步骤中的探针和样品物质的损失,以实现这种探针和样品的有效利用; 及其生产方法。 在本发明中,将由以下结构式(I)表示的原料蒸发并加热以使材料成为单体形式。 然后将材料引入保持在预定真空度的真空沉积室中,其中将材料沉积并聚合在基材上以获得聚合物薄膜。 该聚合物薄膜也用于制造生物芯片。 其中R 11和R 12独立地表示-CH 2 NH 2基或H,并且R 11和R 12中的至少一个是-CH 2 NH 2基。

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