公开(公告)号：US20230150213A1

公开(公告)日：2023-05-18

申请号：US18093408

申请日：2023-01-05

Applicant: SHANGHAI BIO-HEART BIOLOGICAL TECHNOLOGY CO., LTD.

Inventor： Li WANG ,  ChenZhao ZHANG ,  Tao CAI ,  Junyi WANG

IPC: B29C71/00 ,  B29C71/02

CPC classification number: B29C71/0072 ,  B29C71/02 ,  B29C2071/027 ,  B29K2067/046

Abstract: A device is provided for radially strengthening a polylactic acid tube, which includes a tubular mold, a rotating blade and a distal blade, wherein a rotating shaft of the rotating blade is arranged at an axial position of the tubular mold, a first end of the distal blade is movably connected to the rotating blade, and a second end of the distal blade is controlled by a control rod so as to open and close the distal blade. A strengthening method is provided, in which the device for radially strengthening a polylactic acid tube is used. The method includes loading a polylactic acid tube to be strengthened into the strengthening device, heating the strengthening device for a first preset time, rotating the rotating blade in a constant direction while opening the distal blade at a first speed such that the second end of the distal blade approaches the tubular mold, closing the distal blade and restoring the distal blade to an initial state after squeezing and scraping for a second preset time, cooling the strengthening device to room temperature, taking out a strengthened polylactic acid tube, and cutting off redundant sections. The tube strengthened by the above-mentioned strengthening device and method has a better wall thickness uniformity, more precise inner and outer diameter dimensions, with no axial orientation, and no thermal creep in a low temperature range such as body temperature, etc.

公开(公告)号：US20170144341A1

公开(公告)日：2017-05-25

申请号：US15358751

申请日：2016-11-22

Applicant: Huf North America Automotive Parts Mfg. Corp.

Inventor： Mansour Ashtiani ,  Dirk Horn ,  Stefan Manuel Tobias Mattox

IPC: B29C45/00 ,  B29C35/02 ,  E05B85/10 ,  B29C37/00

CPC classification number: E05B85/10 ,  B29C59/14 ,  B29C71/02 ,  B29C2059/147 ,  B29C2071/022 ,  B29C2071/027 ,  B29K2023/12 ,  B29K2105/12 ,  B29K2309/08 ,  B29L2031/3005 ,  B60N3/02

Abstract: A component for a vehicle is formed at least in part from a polymer material, a first fibrous filler material, and a coating material. The polymer material defines an outer surface of the component. The first fibrous filler material is intermixed with the polymer material and exposed on the outer surface of the component. At least one layer of the coating material is disposed on the outer surface of the component such that the at least one layer of coating material adheres to the first fibrous filler material.

公开(公告)号：US08796413B2

公开(公告)日：2014-08-05

申请号：US13818553

申请日：2011-08-04

Applicant: Hironori Tabata ,  Akira Nakasuga ,  Norihiro Asai

Inventor： Hironori Tabata ,  Akira Nakasuga ,  Norihiro Asai

IPC: C08G64/00 ,  B29C35/16 ,  B29C71/00 ,  B29C45/00 ,  B29C43/00 ,  C08F6/26 ,  B29C71/02 ,  C08G63/02 ,  B29C35/02 ,  B29C43/10 ,  B29C35/08

CPC classification number: C08F6/26 ,  B29C35/0227 ,  B29C35/16 ,  B29C43/003 ,  B29C43/02 ,  B29C43/10 ,  B29C45/0001 ,  B29C71/0063 ,  B29C71/02 ,  B29C2035/0811 ,  B29C2043/5808 ,  B29C2071/027

Abstract: Provided are a method for producing a polymer material having a high degree of crystallization, a small variability in degree of crystallization, and a three-dimensionally isotropic crystallinity to thus give high thermal resistance, high isotropy of resin physical properties, and a small variability in resin physical properties; and the polymer material. The method for producing a polymer material includes the steps of: heating a thermoplastic resin to or above a melting point determined from a melting peak measured by DSC into a thermoplastic resin melt; applying a pressure higher than atmospheric pressure to the thermoplastic resin melt; starting cooling the thermoplastic resin melt with a pressure higher than atmospheric pressure applied thereto; releasing the pressure on the thermoplastic resin melt after cooling the thermoplastic resin melt to a cooling-end-temperature lower than an upper limit of a crystallization temperature range, wherein during the cooling, the pressure on the thermoplastic resin melt is maintained at the pressure higher than atmospheric pressure or raised. The polymer material is one obtained by the above production method.

Abstract translation: 本发明提供了具有高结晶度，结晶度变化小，三维各向同性结晶性的高分子材料的制造方法，从而得到高耐热性，树脂物性的各向异性高，变异性小 树脂物理性能; 和聚合物材料。 聚合物材料的制造方法包括以下步骤：将热塑性树脂加热到由DSC测定的熔融峰值确定的熔点以上的热塑性树脂熔融体; 将高于大气压的压力施加到热塑性树脂熔体; 以高于大气压的压力开始冷却热塑性树脂熔体; 在将热塑性树脂熔体冷却至低于结晶温度范围的上限的冷却终止温度之后，释放热塑性树脂熔体上的压力，其中在冷却期间，热塑性树脂熔体上的压力保持在更高的压力 比大气压或升高。 聚合物材料是通过上述制备方法得到的。

公开(公告)号：US20030100691A1

公开(公告)日：2003-05-29

申请号：US10265281

申请日：2002-10-04

Applicant: DIELECTRIC SYSTEMS, INC.

Inventor： Chung J. Lee ,  Atul Kumar

IPC: C23C016/00 ,  B05D003/02 ,  B05D003/00 ,  C08F014/18

CPC classification number: B01J19/123 ,  B01J19/1887 ,  B01J2219/00153 ,  B01J2219/00159 ,  B01J2219/0879 ,  B05D1/007 ,  B05D1/60 ,  B05D3/0254 ,  B05D3/061 ,  B05D3/062 ,  B29C71/02 ,  B29C2071/022 ,  B29C2071/025 ,  B29C2071/027 ,  C08G61/02 ,  C08G61/025 ,  C08G2261/3424 ,  C08J5/18 ,  C08J2365/04 ,  C08L65/00 ,  C08L65/04 ,  C23C16/452 ,  F28D17/005 ,  H01L21/02118 ,  H01L21/0212 ,  H01L21/02203 ,  H01L21/02263 ,  H01L21/02337 ,  H01L21/02356 ,  H01L21/312 ,  H01L21/3127 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  Y10T428/31504 ,  Y10T428/3154 ,  Y10T428/31544 ,  Y10T428/31855 ,  H01L2924/00

Abstract: The present invention pertains to a processing method to produce a porous polymer film that consists of sp2CnullX and HC-sp3CnullnullX bonds (wherein, XnullH or F), and exhibits at least a crystal melting temperature, (nullTmnull). The porous polymer films produced by this invention are useful for fabricating future integrated circuits (nullIC'snull). The method described herein is useful for preparing the porous polymer films by polymerizing reactive intermediates, formed from a first-precursor, with a low feed rate and at temperatures equal to or below a melting temperature of intermediate (T1m). Second-precursors that do not become reactive intermediates or have an incomplete conversion to reactive intermediates are also transported to a deposition chamber and become an inclusion of the deposited film. By utilizing a subsequent in-situ, post treatment process the inclusions in the deposited film can be removed to leave micro-pores in the resultant film. Annealing methods are used herein to stabilize the polymer films after reactive plasma etching. Furthermore, the present invention pertains to employment of reductive plasma conditions for patterning polymer films that consist of sp2CnullX and HC-sp3CnullnullX bonds (wherein, XnullH, F).

Abstract translation: 本发明涉及一种制备由sp2C-X和HC-sp3Calpha-X键（其中X = H或F）组成的多孔聚合物膜的处理方法，并且至少具有晶体熔融温度（“Tm” ）。 本发明生产的多孔聚合物薄膜可用于制造未来的集成电路（“IC”）。 本文所述的方法可用于通过以低进料速率和等于或低于中间体（T1m）的熔融温度的温度聚合由第一前体形成的反应性中间体来制备多孔聚合物膜。 不成为反应性中间体或具有不完全转化为反应性中间体的第二前体也被输送到沉积室并变成沉积膜的包含物。 通过利用随后的原位后处理工艺，可以除去沉积膜中的夹杂物以在所得膜中留下微孔。 本文使用退火方法来稳定反应性等离子体蚀刻后的聚合物膜。 此外，本发明涉及使用由sp2C-X和HC-sp3Calpha-X键组成的聚合物膜的还原等离子体条件（其中，X = H，F）。

公开(公告)号：US20030051662A1

公开(公告)日：2003-03-20

申请号：US10141358

申请日：2002-05-08

Applicant: DIELECTRIC SYSTEMS, INC.

Inventor： Chung J. Lee ,  Oanh Nguyen ,  Atul Kumar

IPC: C23C014/00

CPC classification number: B01J19/123 ,  B01J19/1887 ,  B01J2219/00153 ,  B01J2219/00159 ,  B01J2219/0879 ,  B05D1/007 ,  B05D1/60 ,  B05D3/0254 ,  B05D3/061 ,  B05D3/062 ,  B29C71/02 ,  B29C2071/022 ,  B29C2071/025 ,  B29C2071/027 ,  C08G61/02 ,  C08G61/025 ,  C08G2261/3424 ,  C08J5/18 ,  C08J2365/04 ,  C08L65/00 ,  C08L65/04 ,  C23C16/452 ,  F28D17/005 ,  H01L21/0212 ,  H01L21/02271 ,  H01L21/312 ,  H01L21/3127 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An improved reactor to facilitate new precursor chemistries and transport polymerization processes that are useful for preparations of low null (dielectric constant) films. An improved TP Reactor that consists of UV source and a fractionation device for chemicals is provided to generate useful reactive intermediates from precursors. The reactor is useful for the deposition system.

Abstract translation: 改进的反应器，以促进新的前体化学和可用于制备低介电常数的传输聚合方法。 提供由UV源和用于化学品的分馏装置组成的改进的TP反应器以从前体产生有用的反应性中间体。 该反应器可用于沉积系统。

公开(公告)号：US20180208762A1

公开(公告)日：2018-07-26

申请号：US15748018

申请日：2016-07-22

Applicant: GRAPHENE 3D LAB INC.

Inventor： Irina Pomestchenko ,  Daniel Stolyarov ,  Elena Polyakova ,  Ivan Stolyarov

IPC: C08L67/04 ,  C08K3/04 ,  C08K7/06 ,  C08K3/08 ,  C08K3/22 ,  C08K5/11 ,  C08K5/524 ,  C08K5/50 ,  C08J3/215 ,  C09D11/52 ,  C09D11/322 ,  C09D11/104 ,  B29C71/02

CPC classification number: C08L67/04 ,  B29B9/06 ,  B29C48/05 ,  B29C70/882 ,  B29C71/02 ,  B29C2071/027 ,  B29K2067/046 ,  B29K2105/0038 ,  B29K2105/162 ,  B29K2509/02 ,  B29K2995/0005 ,  B33Y70/00 ,  C04B24/26 ,  C04B26/18 ,  C04B2111/00181 ,  C04B2111/94 ,  C08J3/215 ,  C08J2367/04 ,  C08K3/013 ,  C08K3/042 ,  C08K3/046 ,  C08K3/08 ,  C08K3/22 ,  C08K5/0016 ,  C08K5/005 ,  C08K5/11 ,  C08K5/50 ,  C08K5/524 ,  C08K7/06 ,  C08K2003/0806 ,  C08K2003/085 ,  C08K2003/2241 ,  C08K2201/001 ,  C08K2201/011 ,  C08L2201/08 ,  C09D11/104 ,  C09D11/322 ,  C09D11/52 ,  C04B14/026 ,  C04B14/042 ,  C04B14/06 ,  C04B14/303 ,  C04B14/304 ,  C04B14/305 ,  C04B14/34 ,  C04B14/386 ,  C04B2103/30

Abstract: Electrically conductive thermoplastic polymer composites of particulate thermoplastic polyester polymers, electrically conductive components (carbon nanofibers, graphene nanoplatelets, and/or conductive metal nanoparticulates), processing aids such as plasticizers, thermal stabilizers, etc., as well as nanoscopic particulate fillers such as nanoscopic titanium dioxide, etc., the electrically conductive components being distributed substantially uniformly in the composite to form an electrically conductive network. Also, methods for preparing thermoplastic polymer composites, a system for collecting extruded filaments prepared from thermoplastic polymer composites as a coil of filament, as well as method for tempering articles formed from thermoplastic polymer composites to increase the degree of crystallinity of the thermoplastic polymers and thus their mechanical strength properties.

公开(公告)号：US07364925B2

公开(公告)日：2008-04-29

申请号：US11009285

申请日：2004-12-08

Applicant: Chung J. Lee ,  Chieh Chen ,  Atul Kumar

Inventor： Chung J. Lee ,  Chieh Chen ,  Atul Kumar

IPC: H01L21/00

CPC classification number: B05D1/60 ,  B05D3/0254 ,  B29C71/02 ,  B29C2071/022 ,  B29C2071/025 ,  B29C2071/027 ,  C08G61/02 ,  C08G61/025 ,  C08G2261/3424 ,  C08J5/18 ,  H01L21/0212 ,  H01L21/02271 ,  H01L21/31058 ,  H01L21/3127 ,  Y10T428/269 ,  Y10T428/3154 ,  Y10T428/31544 ,  Y10T428/31855

Abstract: A method of forming a protective barrier in an organic light emitting device is disclosed, wherein the organic light emitting device is formed on a substrate and includes a plurality of layers of materials, the plurality of layers of materials including an organic light emitting layer. The method includes forming an inorganic layer and a semi-crystalline parylene-based polymer layer over an underlying layer, wherein the semi-crystalline parylene-based polymer layer is formed via transport polymerization of a reactive intermediate species. Organic light emitting devices having barriers are also disclosed.

Abstract translation: 公开了一种在有机发光器件中形成保护屏障的方法，其中所述有机发光器件形成在衬底上，并且包括多层材料，所述多层材料包括有机发光层。 该方法包括在下层上形成无机层和半结晶聚对二甲苯基聚合物层，其中通过反应性中间体物质的转移聚合形成半结晶聚对二甲苯基聚合物层。 还公开了具有屏障的有机发光器件。

公开(公告)号：US20050146267A1

公开(公告)日：2005-07-07

申请号：US11009285

申请日：2004-12-08

Applicant: Chung Lee ,  Chieh Chen ,  Atul Kumar

Inventor： Chung Lee ,  Chieh Chen ,  Atul Kumar

IPC: B05D3/02 ,  B05D7/24 ,  B29C71/02 ,  C08G61/02 ,  C08J5/18 ,  H01L21/312 ,  H05B33/00

CPC classification number: B05D1/60 ,  B05D3/0254 ,  B29C71/02 ,  B29C2071/022 ,  B29C2071/025 ,  B29C2071/027 ,  C08G61/02 ,  C08G61/025 ,  C08G2261/3424 ,  C08J5/18 ,  H01L21/0212 ,  H01L21/02271 ,  H01L21/31058 ,  H01L21/3127 ,  Y10T428/269 ,  Y10T428/3154 ,  Y10T428/31544 ,  Y10T428/31855

Abstract: A method of forming a protective barrier in an organic light emitting device is disclosed, wherein the organic light emitting device is formed on a substrate and includes a plurality of layers of materials, the plurality of layers of materials including an organic light emitting layer. The method includes forming an inorganic layer and a semi-crystalline parylene-based polymer layer over an underlying layer, wherein the semi-crystalline parylene-based polymer layer is formed via transport polymerization of a reactive intermediate species. Organic light emitting devices having barriers are also disclosed.

Abstract translation: 公开了一种在有机发光器件中形成保护屏障的方法，其中所述有机发光器件形成在衬底上，并且包括多层材料，所述多层材料包括有机发光层。 该方法包括在下层上形成无机层和半结晶聚对二甲苯基聚合物层，其中半结晶聚对二甲苯基聚合物层通过反应性中间体物质的转运聚合形成。 还公开了具有屏障的有机发光器件。

公开(公告)号：US06881447B2

公开(公告)日：2005-04-19

申请号：US10116724

申请日：2002-04-04

Applicant: Chung J. Lee ,  Atul Kumar

Inventor： Chung J. Lee ,  Atul Kumar

IPC: B05D3/02 ,  B05D7/24 ,  B29C71/02 ,  C08G61/02 ,  C08J5/18 ,  H01L21/312 ,  C23C16/56

CPC classification number: B05D1/60 ,  B05D3/0254 ,  B29C71/02 ,  B29C2071/022 ,  B29C2071/025 ,  B29C2071/027 ,  C08G61/02 ,  C08G61/025 ,  C08G2261/3424 ,  C08J5/18 ,  H01L21/0212 ,  H01L21/02271 ,  H01L21/31058 ,  H01L21/3127 ,  Y10T428/269 ,  Y10T428/3154 ,  Y10T428/31544 ,  Y10T428/31855

Abstract: Preparation methods and stabilization processes for low k polymers that consist of sp2C—X and HC-sp3Cα—X bonds. A preparation method is achieved by controlling the substrate temperature and feed rate of the polymer precursors. One stabilization process includes a post annealing of as-deposited polymer films under the presence of hydrogen under high temperatures. The reductive annealing of these films is conducted at temperatures from −20° C. to −50° C. to +20° C. to +50° C. of their Reversible Crystal Transformation (“CRT”) temperatures, then quenching the resulting films to −20° C. to −50° C. below their “CRT” temperatures. The reductive annealing is conducted before the as-deposited film was removed from a deposition system and still under the vacuum. “Re-stabilization” processes of polymer surfaces that are exposed to reactive plasma etching are also disclosed; thus, further coating by barrier metal, cap layer or etch-stop layer can be safely applied.

Abstract translation: 由k-S-X和HC-sp-3-α-X键组成的低k聚合物的制备方法和稳定化方法。 通过控制聚合物前体的基板温度和进料速率来实现制备方法。 一种稳定化方法包括在氢气存在下在高温下对沉积的聚合物膜进行后退火。 这些膜的还原退火在其可逆晶体转变（“CRT”）温度的-20℃至-50℃至+ 20℃至+ 50℃的温度下进行，然后淬灭所得 在-20℃至-50℃的温度下低于它们的“CRT”温度。 还原退火在沉积膜从沉积系统中移除之前仍然在真空下进行。 还公开了暴露于反应性等离子体蚀刻的聚合物表面的“再稳定化”工艺; 因此，可以安全地施加通过阻挡金属，盖层或蚀刻停止层的进一步涂覆。

公开(公告)号：US20040255862A1

公开(公告)日：2004-12-23

申请号：US10854776

申请日：2004-05-25

Inventor： Chung J. Lee ,  Atul Kumar ,  Chieh Chen

IPC: C23C016/00

CPC classification number: H01L23/5329 ,  B01J19/123 ,  B01J19/1887 ,  B01J2219/00153 ,  B01J2219/00159 ,  B01J2219/0879 ,  B05D1/007 ,  B05D1/60 ,  B05D3/0254 ,  B05D3/061 ,  B05D3/062 ,  B29C71/02 ,  B29C2071/022 ,  B29C2071/025 ,  B29C2071/027 ,  C08G61/02 ,  C08G61/025 ,  C08G2261/3424 ,  C08J5/18 ,  C08J2365/04 ,  C08L65/00 ,  C08L65/04 ,  C23C16/452 ,  F28D17/005 ,  H01L21/0212 ,  H01L21/02263 ,  H01L21/312 ,  H01L21/3127 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

Abstract: A reactor for removing a leaving group from a precursor molecule for a transport polymerization process is disclosed, wherein the reactor includes an exterior unit having an inlet, an outlet, and an interior disposed between the inlet and the outlet, where precursors enter the reactor at the inlet, are converted to a reactive intermediates within the interior, and wherein the reactive intermediates exit at the outlet, and wherein the interior is under a vacuum for at least a duration; a heater body located in said interior, wherein the heater body is at least partially conductively insulated from said reactor; and an energy source coupled outside said reactor for providing energy to said heater body via radiative heat transfer.

Abstract translation: 公开了一种用于从用于运输聚合方法的前体分子除去离去基团的反应器，其中反应器包括具有入口，出口和设置在入口和出口之间的内部的外部单元，其中前体进入反应器 所述入口在内部被转化为反应性中间体，并且其中所述反应性中间体在所述出口处离开，并且其中所述内部处于真空下至少持续一段时间; 位于所述内部的加热器主体，其中所述加热器主体至少部分地与所述反应器导电绝缘; 以及耦合在所述反应器外部的能量源，用于经由辐射热传递向所述加热器主体提供能量。