公开(公告)号：US09869858B2

公开(公告)日：2018-01-16

申请号：US14955060

申请日：2015-12-01

Applicant: APPLE INC.

Inventor： Yuval Gerson ,  Alexander Shpunt

IPC: G01S17/42 ,  G02B26/10 ,  B81B3/00 ,  B81C1/00 ,  G01S7/481 ,  G01S17/89 ,  G01S7/497 ,  G02B26/08 ,  G01S17/10

CPC classification number: G02B26/101 ,  B81B3/00 ,  B81B3/007 ,  B81B2201/033 ,  B81B2201/034 ,  B81B2201/047 ,  B81B2203/0136 ,  B81B2203/058 ,  B81B2207/015 ,  B81C1/00515 ,  B81C2201/0111 ,  G01S7/4817 ,  G01S7/497 ,  G01S17/10 ,  G01S17/42 ,  G01S17/89 ,  G02B26/0833

Abstract: A scanning device includes a frame, having a central opening, and an array including a plurality of parallel mirrors contained within the central opening of the frame. Hinges respectively connect the mirrors to the frame and define respective, mutually-parallel axes of rotation of the mirrors relative to the frame. A main drive applies a driving force to the array so as to drive an oscillation of the mirrors about the hinges at a resonant frequency of the array. A sensor is configured to detect a discrepancy in a synchronization of the oscillation among the mirrors in the array, and an adjustment circuit applies a corrective signal to at least one of the mirrors in order to alleviate the detected discrepancy.

公开(公告)号：US20130140976A1

公开(公告)日：2013-06-06

申请号：US13758450

申请日：2013-02-04

Applicant: FUJIKURA LTD.

Inventor： Satoshi YAMAMOTO ,  Tatsuo SUEMASU

IPC: B05D3/06 ,  B05D3/10

CPC classification number: B05D3/06 ,  B01L3/502707 ,  B01L3/502715 ,  B01L2300/0654 ,  B01L2300/0816 ,  B01L2300/0851 ,  B01L2300/0877 ,  B01L2300/168 ,  B01L2400/086 ,  B05D3/10 ,  B81B2201/058 ,  B81B2203/033 ,  B81B2203/0361 ,  B81B2207/056 ,  B81C1/00063 ,  B81C1/00515 ,  B81C2201/0143 ,  G01N21/554 ,  G01N21/6452 ,  G01N21/648

Abstract: A method of manufacturing a microfluidic chip includes: irradiating, with a laser light, an area to be provided with a valley for storing a fluid on a surface of a substrate so as to form a modified region having a periodic pattern formed in a self-organizing manner in a light-collecting area of the laser light, the laser light having a pulse width for which the pulse duration is on the order of picoseconds or less; carrying out an etching treatment on the substrate in which the modified region is formed, removing at least some of the modified portion so as to provide the valley, and forming a periodic structure having a plurality of groove portions along one direction which have a surface profile based on the periodic pattern on at least a bottom surface of the valley; and forming a metal layer that covers the periodic structure of the bottom surface.

Abstract translation: 一种微流体芯片的制造方法，其特征在于，具备：激光照射在基板表面上设置有用于存储流体的谷部的区域，形成具有形成于所述自流体的周期性图案的改质区域， 在激光的聚光区域中组织的方式，具有脉冲宽度大约为皮秒或更小的脉冲宽度的激光; 对其中形成有改质区域的基板进行蚀刻处理，除去至少一部分改性部分以提供谷部，并形成沿着一个方向具有多个凹槽部分的周期性结构，其具有表面轮廓 基于谷的至少底表面上的周期性图案; 并形成覆盖底面的周期性结构的金属层。

公开(公告)号：US20190047851A1

公开(公告)日：2019-02-14

申请号：US16160683

申请日：2018-10-15

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Kai-Chih Liang ,  Chia-Hua Chu ,  Te-Hao Lee ,  Jiou-Kang Lee ,  Chung-Hsien Lin

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00515 ,  B81B7/0006 ,  B81B7/0077 ,  B81B2201/0235 ,  B81B2203/0315 ,  B81B2207/07 ,  B81B2207/095 ,  B81B2207/096 ,  B81C1/00293 ,  B81C1/00301 ,  B81C2201/0132 ,  B81C2201/014 ,  B81C2203/0109 ,  B81C2203/0118 ,  B81C2203/0145 ,  B81C2203/035 ,  H01L2224/11

Abstract: A microelectromechanical system (MEMS) device may include a MEMS structure over a first substrate. The MEMS structure comprises a movable element. Depositing a first conductive material over the first substrate and etching trenches in a second substrate. Filling the trenches with a second conductive material and depositing a third conductive material over the second conductive material and the second substrate. Bonding the first substrate and the second substrate and thinning a backside of the second substrate which exposes the second conductive material in the trenches.

公开(公告)号：US20190013151A1

公开(公告)日：2019-01-10

申请号：US15803155

申请日：2017-11-03

Applicant: Honeywell International Inc.

Inventor： Steven Tin ,  Neil Krueger

IPC: H01G7/02 ,  H02N1/08 ,  B81C1/00 ,  H04B1/04

CPC classification number: H01G7/025 ,  B81C1/00515 ,  B81C2201/0114 ,  B81C2201/0115 ,  H02N1/08 ,  H04B1/04

Abstract: An ultra-high charge density electret is disclosed. The ultra-high charge density electret includes a three-dimensional structure having a plurality of sidewalls. A porous silicon dioxide film is formed on the plurality of sidewalls, and the porous silicon dioxide film is charged with a plurality of positive or negative ions.

公开(公告)号：US20150158723A1

公开(公告)日：2015-06-11

申请号：US14624008

申请日：2015-02-17

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Kai-Chih Liang ,  Chia-Hua Chu ,  Te-Hao Lee ,  Jiou-Kang Lee ,  Chung-Hsien Lin

IPC: B81B7/00

CPC classification number: B81C1/00515 ,  B81B7/0006 ,  B81B7/0077 ,  B81B2201/0235 ,  B81B2203/0315 ,  B81B2207/07 ,  B81B2207/095 ,  B81B2207/096 ,  B81C1/00293 ,  B81C1/00301 ,  B81C2201/0132 ,  B81C2201/014 ,  B81C2203/0109 ,  B81C2203/0118 ,  B81C2203/0145 ,  B81C2203/035 ,  H01L2224/11

Abstract: A microelectromechanical system (MEMS) device may include a MEMS structure over a first substrate. The MEMS structure comprises a movable element. Depositing a first conductive material over the first substrate and etching trenches in a second substrate. Filling the trenches with a second conductive material and depositing a third conductive material over the second conductive material and the second substrate. Bonding the first substrate and the second substrate and thinning a backside of the second substrate which exposes the second conductive material in the trenches.

Abstract translation: 微机电系统（MEMS）装置可以包括在第一基板上的MEMS结构。 MEMS结构包括可移动元件。 在第一衬底上沉积第一导电材料并蚀刻第二衬底中的沟槽。 用第二导电材料填充沟槽并在第二导电材料和第二衬底上沉积第三导电材料。 将第一基板和第二基板接合并使第二基板的背面变薄，从而在沟槽中露出第二导电材料。

公开(公告)号：US20140245608A1

公开(公告)日：2014-09-04

申请号：US14349477

申请日：2012-10-03

Applicant: CANON KABUSHIKI KAISHA

Inventor： Hiroyuki Morimoto ,  Kosuke Kurachi

IPC: B23K26/36 ,  B23K26/40 ,  B41J2/16 ,  B23K26/12

CPC classification number: B41J2/16 ,  B23K26/0622 ,  B23K26/1224 ,  B23K26/361 ,  B23K26/40 ,  B23K26/60 ,  B23K2103/50 ,  B41J2/1603 ,  B41J2/1629 ,  B41J2/1634 ,  B81C1/00515 ,  B81C2201/0143 ,  Y10T29/49401

Abstract: In removal processing using a pulsed laser beam, processing deviation occurs in the depthwise direction to cause a processing error in a predetermined removal shape.A first pulsed laser beam L1 is a pulsed laser beam having a wavelength that exhibits transmittance to a workpiece 6, and a second pulsed laser beam L2 is a pulsed laser beam having a wavelength that exhibits absorption to the workpiece 6. The first pulsed laser beam L1 is focused into the workpiece 6, and a focal point P1 of the first pulsed laser beam L1 is scanned along the outline of a predetermined removal region R1 to form a modified portion 6A along the outline of the predetermined removal region R1. Next, removal processing is performed by scanning the second pulsed laser beam L2 in a region enclosed by the modified portion 6A.

Abstract translation: 在使用脉冲激光束的去除处理中，在深度方向发生处理偏差，导致预定的去除形状的处理误差。 第一脉冲激光束L1是具有对工件6具有透射率的波长的脉冲激光束，第二脉冲激光束L2是具有对工件6具有吸收的波长的脉冲激光束。第一脉冲激光束 L1被聚焦到工件6中，并且沿着预定去除区域R1的轮廓扫描第一脉冲激光束L1的焦点P1，以沿着预定去除区域R1的轮廓形成修改部分6A。 接下来，通过在由修改部分6A包围的区域中扫描第二脉冲激光束L2来执行去除处理。

公开(公告)号：US20050009374A1

公开(公告)日：2005-01-13

申请号：US10838859

申请日：2004-05-04

Applicant: Jun Gao ,  Michael Sailor ,  Sangeeta Bhatia ,  Christopher Flaim

Inventor： Jun Gao ,  Michael Sailor ,  Sangeeta Bhatia ,  Christopher Flaim

IPC: B81C1/00 ,  C25F3/12 ,  C25F3/14 ,  H01L21/26 ,  H01L21/3063

CPC classification number: B81C1/00515 ,  B81C2201/0114 ,  B81C2201/0115 ,  C25F3/12 ,  C25F3/14 ,  H01L21/3063

Abstract: The invention is directed to methods for direct patterning of silicon. The invention provides the ability to fabricate complex surfaces in silicon with three dimensional features of high resolution and complex detail. The invention is suitable, for example, for use in soft lithography as embodiments of the invention can quickly create a master for use in soft lithography. In an embodiment of the invention, electrochemical etching of silicon, such as a silicon wafer, for example, is conducted while at least a portion of the silicon surface is exposed to an optical pattern. The etching creates porous silicon in the substrate, and removal of the porous silicon layer leaves a three-dimensional structure correlating to the optical pattern.

Abstract translation: 本发明涉及直接图案化硅的方法。 本发明提供了在硅中制造具有高分辨率和复杂细节的三维特征的复杂表面的能力。 本发明适用于例如在软光刻中使用，因为本发明的实施例可以快速地创建用于软光刻的母版。 在本发明的一个实施例中，例如硅的电化学蚀刻被进行，同时硅表面的至少一部分暴露于光学图案。 蚀刻在衬底中产生多孔硅，并且去除多孔硅层留下与光学图案相关的三维结构。

公开(公告)号：US20170153445A1

公开(公告)日：2017-06-01

申请号：US14955060

申请日：2015-12-01

Applicant: APPLE INC.

Inventor： Yuval Gerson ,  Alexander Shpunt

IPC: G02B26/10 ,  B81C1/00 ,  G02B26/08 ,  G01S17/89 ,  G01S7/497 ,  B81B3/00 ,  G01S7/481

CPC classification number: G02B26/101 ,  B81B3/00 ,  B81B3/007 ,  B81B2201/033 ,  B81B2201/034 ,  B81B2201/047 ,  B81B2203/0136 ,  B81B2203/058 ,  B81B2207/015 ,  B81C1/00515 ,  B81C2201/0111 ,  G01S7/4817 ,  G01S7/497 ,  G01S17/10 ,  G01S17/42 ,  G01S17/89 ,  G02B26/0833

Abstract: A scanning device includes a frame, having a central opening, and an array including a plurality of parallel mirrors contained within the central opening of the frame. Hinges respectively connect the mirrors to the frame and define respective, mutually-parallel axes of rotation of the mirrors relative to the frame. A main drive applies a driving force to the array so as to drive an oscillation of the mirrors about the hinges at a resonant frequency of the array. A sensor is configured to detect a discrepancy in a synchronization of the oscillation among the mirrors in the array, and an adjustment circuit applies a corrective signal to at least one of the mirrors in order to alleviate the detected discrepancy.

公开(公告)号：US09281206B2

公开(公告)日：2016-03-08

申请号：US14351690

申请日：2012-10-12

Applicant: The Regents of the University of California

Inventor： Sungho Jin ,  Young Oh ,  Chulmin Choi ,  Dae-Hoon Hong ,  Tae Kyoung Kim

IPC: H01L21/302 ,  H01L21/306 ,  B28D5/00 ,  H01L21/67 ,  B82Y30/00 ,  B81C1/00 ,  H01L31/0352 ,  H01L31/0236 ,  H01L31/068 ,  H01L31/18 ,  A61M37/00

CPC classification number: H01L21/30608 ,  A61M2037/0046 ,  A61M2037/0053 ,  B28D5/00 ,  B81B2201/055 ,  B81C1/00111 ,  B81C1/00515 ,  B82Y30/00 ,  H01L21/30604 ,  H01L21/67086 ,  H01L31/02366 ,  H01L31/035209 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: Methods, systems, and devices are described for slicing and shaping materials using magnetically guided chemical etching. In one aspect, a method includes forming a pattern on a substrate by a mask, depositing a catalytic etcher layer on the patterned substrate, a magnetic guide layer on the etcher layer, and a protection layer on the guide layer, etching the substrate by applying an etching solution to the substrate that chemically reacts with the etcher layer and etches material from the substrate at exposed regions not covered by the mask, steering the composite etching structure into the substrate during the etching by an applied magnetic field that creates a force on the guide layer to direct the etching, in which the steering defines the shape of the sliced regions of the etched substrate, and removing the etched material, the mask, and the composite etching structure to produce a sliced material structure.

Abstract translation: 描述了使用磁导向化学蚀刻来切割和成形材料的方法，系统和装置。 在一个方面，一种方法包括通过掩模在衬底上形成图案，在图案化衬底上沉积催化蚀刻剂层，在蚀刻层上沉积导磁层，在引导层上形成保护层，通过施加蚀刻衬底 对衬底的蚀刻溶液，其与蚀刻剂层发生化学反应并在未被掩模覆盖的暴露区域蚀刻来自衬底的材料，在蚀刻期间通过施加的磁场将复合蚀刻结构转向衬底中，所述磁场在 引导层以引导蚀刻，其中转向限定蚀刻的衬底的切片区域的形状，以及去除蚀刻的材料，掩模和复合蚀刻结构以产生切片材料结构。

公开(公告)号：US09178018B2

公开(公告)日：2015-11-03

申请号：US14098879

申请日：2013-12-06

Applicant: Christoph Schelling

Inventor： Christoph Schelling

IPC: H01L21/302 ,  H01L29/06 ,  H01L29/04 ,  B81C1/00 ,  H01L21/306

CPC classification number: H01L29/0684 ,  B81B2201/0257 ,  B81C1/00047 ,  B81C1/00515 ,  H01L21/30608 ,  H01L29/045 ,  H04R2201/003

Abstract: A manufacturing method is described for a micromechanical component and a corresponding micromechanical component. The manufacturing method includes the steps: forming at least one crystallographically modified area in a substrate; forming an etching mask having a mask opening on a main surface of the substrate; and carrying out an etching step using the etching mask, the crystallographically modified area and a surrounding area of the substrate being removed and thus forming a cavern in the substrate.

Abstract translation: 描述了用于微机械部件和相应的微机械部件的制造方法。 该制造方法包括以下步骤：在衬底中形成至少一个晶体学修饰区域; 在所述基板的主表面上形成具有掩模开口的蚀刻掩模; 并使用蚀刻掩模进行蚀刻步骤，所述晶体学改性区域和所述衬底的周围区域被去除，从而在所述衬底中形成洞穴。