Invention Grant
- Patent Title: Semiconductor processing by magnetic field guided etching
- Patent Title (中): 半导体处理通过磁场引导蚀刻
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Application No.: US14351690Application Date: 2012-10-12
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Publication No.: US09281206B2Publication Date: 2016-03-08
- Inventor: Sungho Jin , Young Oh , Chulmin Choi , Dae-Hoon Hong , Tae Kyoung Kim
- Applicant: The Regents of the University of California
- Applicant Address: US CA Oakland
- Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Current Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Current Assignee Address: US CA Oakland
- Agency: Perkins Coie LLP
- International Application: PCT/US2012/060143 WO 20121012
- International Announcement: WO2013/056186 WO 20130418
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/306 ; B28D5/00 ; H01L21/67 ; B82Y30/00 ; B81C1/00 ; H01L31/0352 ; H01L31/0236 ; H01L31/068 ; H01L31/18 ; A61M37/00

Abstract:
Methods, systems, and devices are described for slicing and shaping materials using magnetically guided chemical etching. In one aspect, a method includes forming a pattern on a substrate by a mask, depositing a catalytic etcher layer on the patterned substrate, a magnetic guide layer on the etcher layer, and a protection layer on the guide layer, etching the substrate by applying an etching solution to the substrate that chemically reacts with the etcher layer and etches material from the substrate at exposed regions not covered by the mask, steering the composite etching structure into the substrate during the etching by an applied magnetic field that creates a force on the guide layer to direct the etching, in which the steering defines the shape of the sliced regions of the etched substrate, and removing the etched material, the mask, and the composite etching structure to produce a sliced material structure.
Public/Granted literature
- US20140256078A1 SEMICONDUCTOR PROCESSING BY MAGNETIC FIELD GUIDED ETCHING Public/Granted day:2014-09-11
Information query
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