-
公开(公告)号：US20240347670A1
公开(公告)日：2024-10-17
申请号：US18683884
申请日：2022-08-16
发明人： Christoph Klemp , Stefan IIIek , Ines Pietzonka , Andreas Biebersdorf , Xue Wang
CPC分类号： H01L33/14 , H01L33/0062 , H01L33/025 , H01L33/06 , H01L33/305
摘要： In an embodiment a method includes providing a growth substrate layer, depositing a first doped [(AlxGa1-x)yIn1-y]zP1-z carrier transport layer on the substrate layer with x in a range of [0.5;1] along a growth direction, and depositing an active region along the growth direction, the active region for generating radiation and comprising a plurality of alternating [(AlaGa1-a)bIn1-b]cP1-c quantum well layers and [(AldGa1-d)eIn1-e]fP1-f barrier layers, wherein a is in a range of [0;0.5] and d is in a range of [0.45;1.0], wherein depositing of at least one of the barrier layer and/or the quantum well layer comprises doping with a dopant having a concentration in a range of 1e15 atoms/cm3 to 5e17 atoms/cm3, wherein the dopant is selected from at least one of the group consisting of Mg, Zn, Te and Si or depositing a second doped carrier transport [(AlxGa1-x)yIn1-y]zP1-z layer with x in a range of [0.45;1] along the growth direction.
-
公开(公告)号：US20240332444A1
公开(公告)日：2024-10-03
申请号：US18699385
申请日：2022-08-11
IPC分类号： H01L31/167 , H01L31/0216 , H01L31/0232 , H01L31/0304 , H01L31/0352 , H01L31/0687 , H02J50/30
CPC分类号： H01L31/167 , H01L31/02161 , H01L31/02327 , H01L31/03046 , H01L31/035236 , H01L31/0687 , H02J50/30
摘要： An optoelectronic device is specified, including an emitter, operated with an electrical input voltage and configured to emit electromagnetic radiation during operation, a receiver, configured to convert electromagnetic radiation emitted by the emitter to an output voltage, wherein the receiver includes a semiconductor layer sequence with a plurality of stacked active layers, electromagnetic radiation emitted by the emitter is coupled into the receiver via a first side face of the semiconductor layer sequence, and the electromagnetic radiation propagates parallel to a main extension plane of the active layer inside the active layer, where it is gradually absorbed and converted into an electrical voltage.
-
公开(公告)号：US20240272281A1
公开(公告)日：2024-08-15
申请号：US18682042
申请日：2022-08-05
发明人： Martin HETZL , Reiner WINDISCH , Jens EBBECKE
CPC分类号： G01S7/4814 , G01S7/484 , G01S7/4865 , H01S5/1092 , G01S17/10 , H01S5/34
摘要： An optical sensor arrangement, for example for a LiDAR system, includes an emitter unit and a receiver unit. The emitter unit includes a semiconductor laser configured to emit coherent electromagnetic radiation having at least two wavelengths. Furthermore, the emitter unit is configured to direct the emitted electromagnetic radiation at a remote target, the receiver unit including at least one optical sensor configured to selectively detect electromagnetic radiation depending on the at least two wavelengths. The receiver unit is arranged relative to the emitter unit and configured such that electromagnetic radiation scattered or reflected by the remote target is detectable on the optical sensor.
-
公开(公告)号：US20240260186A1
公开(公告)日：2024-08-01
申请号：US18561274
申请日：2022-05-17
发明人： Thomas KIPPES , Joerg Erich SORG
CPC分类号： H05K1/111 , H05K3/0061 , H05K3/341 , H05K2201/10121 , H05K2203/1173
摘要： The invention relates to an optoelectronic assembly with an optoelectronic component with two or more connecting contacts for feeding supply and/or control signals. A housing with a two-dimensional structured underside has two or more solder pads which are each surrounded by a non-wettable region, wherein the solder pads are guided through the underside of the housing and are connected to the plurality of connecting contacts. Furthermore, the underside of the housing comprises two or more solder surfaces which are each surrounded by a non-wettable region. The two or more solder pads and the solder surfaces are thereby substantially uniformly distributed over the underside of the housing.
-
公开(公告)号：US20240247977A1
公开(公告)日：2024-07-25
申请号：US18564177
申请日：2022-03-31
发明人： Gerd PLECHINGER
CPC分类号： G01J1/08 , G01J1/44 , G01J2001/083 , G01J2001/446
摘要： A measurement method for characterization of a photodetector includes illumination of the photodetector with a variable electromagnetic radiation. The variable electromagnetic radiation has a temporally oscillating radiation intensity with fixed period and amplitude. The method also includes illumination of the photodetector with a first electromagnetic radiation having a temporally constant first radiation intensity and measurement of a first output signal at the photodetector. The method further includes illumination of the photodetector with a second electromagnetic radiation having a temporally constant second radiation intensity different from the first radiation intensity and measurement of a second output signal at the photodetector. The method additionally includes determination of a non-linearity of the photodetector by comparing the measurements of the first and second output signals.
-
公开(公告)号：US20240235150A1
公开(公告)日：2024-07-11
申请号：US18561496
申请日：2022-05-17
发明人： Johann RAMCHEN , Joerg Erich SORG
IPC分类号： H01S5/00 , H01S5/02208 , H01S5/042 , H01S5/323 , H01S5/42
CPC分类号： H01S5/0087 , H01S5/32341 , H01S5/423 , H01S5/02208 , H01S5/04256
摘要： The invention relates to a semiconductor laser device a surface emitting semiconductor laser element having a GaN-containing compound semiconductor layer and a converter. The converter is adapted to convert a wavelength of laser radiation emitted from the surface emitting semiconductor laser element.
-
公开(公告)号：US20240192578A1
公开(公告)日：2024-06-13
申请号：US18286875
申请日：2022-04-12
CPC分类号： G03B21/2013 , G03B21/006 , G03B21/204 , G03B21/2053 , G03B21/2066 , G03B21/208
摘要： A projector includes a first optoelectronic semiconductor chip for generating a first radiation having a first color. The projector also includes a second optoelectronic semiconductor chip for generating a second radiation-having a second color. The projector further includes a wavelength conversion element which is configured to generate a third radiation having a third color from a first portion of the first radiation. The projector additionally includes beam splitter. The projector also includes a scattering plate. The wavelength conversion element is configured to fully convert the first portion of the first radiation. The beam splitter is configured to branch off a second portion of the first radiation upstream of the wavelength conversion element. The scattering plate is arranged in a beam path of the second portion of the first radiation at a point at which the first portion has already been branched off.
-
公开(公告)号：US20240186460A1
公开(公告)日：2024-06-06
申请号：US18287727
申请日：2022-04-05
发明人： Lutz HÖPPEL
CPC分类号： H01L33/486 , H01L25/167 , H01L33/60 , H01L33/62 , H01L2933/0066
摘要： A component includes a carrier, at least one semiconductor chip, an intermediate layer and a cover layer. The semiconductor chip, the intermediate layer and the cover layer are arranged on the carrier. The cover layer has at least one cavity wherein the semiconductor chip is arranged. The intermediate layer is electrically insulating and is arranged in regions along the vertical direction between the carrier and the cover layer. The intermediate layer extends along lateral direction into the cavity and adjoins the semiconductor chip. The cover layer has a vertical height that varies depending on the lateral positions of the cover layer and has a reduced vertical height at the positions of the intermediate layer.
-
公开(公告)号：US20240186173A1
公开(公告)日：2024-06-06
申请号：US18552610
申请日：2022-04-01
发明人： Alexander Pfeuffer
IPC分类号： H01L21/683 , H01L25/075 , H01L33/60 , H01L33/62
CPC分类号： H01L21/6835 , H01L25/0753 , H01L33/60 , H01L33/62 , H01L2221/68354 , H01L2221/68368 , H01L2933/0066
摘要： In embodiments a method includes providing an optoelectronic semiconductor component on the first carrier, applying a structurable material layer on the at least one optoelectronic semiconductor component, structuring the at least one structurable material layer in such a way that a partial region of the structured material layer on a top surface of the optoelectronic semiconductor component is assigned to the optoelectronic semiconductor component; picking up the optoelectronic semiconductor component by a transfer unit, lifting the optoelectronic semiconductor component off the first carrier, arranging the optoelectronic semiconductor component on a first region of the second carrier, wherein at least a second region adjacent to the first region on the second carrier protrudes the top surface of the optoelectronic semiconductor component and fixing the optoelectronic semiconductor component to the second carrier.
-
公开(公告)号：US20240162681A1
公开(公告)日：2024-05-16
申请号：US18552795
申请日：2022-03-02
CPC分类号： H01S5/04256 , H01S5/026 , H01S5/028 , H01S5/1085 , H01S5/187 , H01S5/34333
摘要： In at least one embodiment, the optoelectronic semiconductor chip including a semiconductor layer sequence, in which there is at least one active zone for generating radiation; and a first electrode and a second electrode, with which the semiconductor layer sequence is in electrical contact; wherein the semiconductor layer sequence has, in the region of the active zone, at least one obliquely extending facet designed for a beam deflection of the radiation; wherein the first electrode and the second electrode are on the same mounting side of the semiconductor layer sequence as the at least one obliquely extending facet, and the mounting side is a main side of the semiconductor layer sequence; and wherein the radiation is coupled out on an emission side of the semiconductor layer sequence opposite from the mounting side.
-
-
-
-
-
-
-
-
-
搜索结果
200 条记录 (耗时 0.026 秒)
