公开(公告)号：US20240347670A1

公开(公告)日：2024-10-17

申请号：US18683884

申请日：2022-08-16

申请人： ams-OSRAM international GmbH

发明人： Christoph Klemp ,  Stefan IIIek ,  Ines Pietzonka ,  Andreas Biebersdorf ,  Xue Wang

IPC分类号： H01L33/14 ,  H01L33/00 ,  H01L33/02 ,  H01L33/06 ,  H01L33/30

CPC分类号： H01L33/14 ,  H01L33/0062 ,  H01L33/025 ,  H01L33/06 ,  H01L33/305

摘要： In an embodiment a method includes providing a growth substrate layer, depositing a first doped [(AlxGa1-x)yIn1-y]zP1-z carrier transport layer on the substrate layer with x in a range of [0.5;1] along a growth direction, and depositing an active region along the growth direction, the active region for generating radiation and comprising a plurality of alternating [(AlaGa1-a)bIn1-b]cP1-c quantum well layers and [(AldGa1-d)eIn1-e]fP1-f barrier layers, wherein a is in a range of [0;0.5] and d is in a range of [0.45;1.0], wherein depositing of at least one of the barrier layer and/or the quantum well layer comprises doping with a dopant having a concentration in a range of 1e15 atoms/cm3 to 5e17 atoms/cm3, wherein the dopant is selected from at least one of the group consisting of Mg, Zn, Te and Si or depositing a second doped carrier transport [(AlxGa1-x)yIn1-y]zP1-z layer with x in a range of [0.45;1] along the growth direction.