公开(公告)号：US20250046748A1

公开(公告)日：2025-02-06

申请号：US18716114

申请日：2022-12-02

Applicant: ams-OSRAM International GmbH

Inventor： Klaus MUELLER ,  Holger KLASSEN ,  Georg PIRZER

IPC: H01L23/00

Abstract: The present invention relates to an electronic component comprising: a substrate, an optoelectronic component, a first intermetallic layer consisting of tin and nickel, a second intermetallic layer comprising tin and titanium, a third intermetallic layer comprising tin and gold, whereby the amount of tin and gold in the third intermetallic layer is approximately the same. The invention also relates to a method of manufacturing an electronic component and the use of an electronic component.

公开(公告)号：US20250040326A1

公开(公告)日：2025-01-30

申请号：US18716880

申请日：2022-12-09

Applicant: ams-OSRAM International GmbH

Inventor： Norwin von Malm ,  Alvaro Gomez-Iglesias ,  Harald König

IPC: H01L33/62 ,  H01L33/06 ,  H01L33/20 ,  H01L33/46 ,  H01L33/50 ,  H01L33/56

Abstract: In an embodiment an optoelectronic component with an epitaxial layer sequence comprises a functional inner region having a first electrical contact and a second electrical contact opposite the first electrical contact, as well as semiconductor layers arranged between the first electrical contact and the second electrical contact configured to generate light. The semiconductor layers comprise a base area that increases towards the second electrical contact. A dielectric passivation layer is arranged on the side walls of the semiconductor layers. A mirror layer surrounds the passivation layer at a distance thereby forming a gap. The second electrical contact and a plane of the gap surrounding the second electrical contact form a common light-emitting surface.

公开(公告)号：US20250031495A1

公开(公告)日：2025-01-23

申请号：US18712735

申请日：2022-11-24

Applicant: ams-OSRAM International GmbH

Inventor： Florian PESKOLLER ,  Gertrud KRAEUTER ,  Angela EBERHARDT ,  Moritz LAUBSCHER

IPC: H01L33/50 ,  H01L25/075 ,  H01L33/62 ,  H01S5/00

Abstract: A radiation-emitting component includes a semiconductor chip which, in operation, emits electromagnetic radiation of a first wavelength range from a radiation exit surface, and a conversion element on a cover surface of the semiconductor chip comprising the radiation exit surface. The conversion element contains a matrix material and phosphor particles embedded therein which convert electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range. The conversion element has a bearing surface which is equal to or smaller than the cover surface of the semiconductor chip, and the bearing surface is completely in direct contact with the cover surface of the semiconductor chip. A method for producing a radiation-emitting component is further disclosed.

公开(公告)号：US20240429674A1

公开(公告)日：2024-12-26

申请号：US18698416

申请日：2022-09-29

Applicant: ams-OSRAM International GmbH

Inventor： Zeljko PAJKIC ,  Johann RAMCHEN

IPC: H01S5/00 ,  H01L25/075 ,  H01L33/00 ,  H01L33/50 ,  H01S5/42

Abstract: An optoelectronic converter element includes a substrate, which includes a material having a thermal conductivity of greater 25 W/(m*K), openings being formed in the substrate, and a luminophore located in the openings, thereby defining converter regions.

公开(公告)号：US20240429350A1

公开(公告)日：2024-12-26

申请号：US18291877

申请日：2022-07-18

Applicant: ams-OSRAM International GmbH

Inventor： Michael ZITZLSPERGER ,  Thomas SCHWARZ ,  Hansjoerg SCHOELL

IPC: H01L33/48 ,  H01L33/50 ,  H01L33/58 ,  H01L33/62

Abstract: The invention relates to an optoelectronic component comprising a carrier, an optoelectronic semiconductor chip and a metal cover. The optoelectronic semiconductor chip has a top with a light-emitting surface. The optoelectronic semiconductor chip is disposed on a top of the carrier such that the light-emitting surface faces away from the top of the carrier. The cover is disposed above the top of the carrier and above the optoelectronic semiconductor chip. The cover has an opening, which is disposed above the light-emitting surface. A dam, which surrounds the light-emitting surface, is disposed on the top of the optoelectronic semiconductor chip.

公开(公告)号：US20240410986A1

公开(公告)日：2024-12-12

申请号：US18702037

申请日：2022-09-27

Applicant: ams-OSRAM International GmbH

Inventor： Reiner WINDISCH ,  Hubert HALBRITTER ,  Simon LANKES

IPC: G01S7/481 ,  G01S7/4912 ,  G01S17/34 ,  H01L31/0352 ,  H01L31/103

Abstract: The invention relates to a detector element which has the following features: an epitaxial semiconductor layer sequence including at least two active layers which are designed to absorb electromagnetic radiation with a wavelength L1, wherein the epitaxial semiconductor layer sequence has a first main surface and a second main surface lying opposite the first main surface, each surface being designed to couple in and couple out electromagnetic radiation, and at least three electric connection contacts which are designed to electrically contact the active layers, an electric connection contact being arranged between two active layers. The invention additionally relates to a lidar module and to a method for operating a lidar module.

公开(公告)号：US20240396439A1

公开(公告)日：2024-11-28

申请号：US18693365

申请日：2022-09-13

Applicant: ams-OSRAM International GmbH

Inventor： Alvaro GOMEZ-IGLESIAS ,  Horst VARGA

IPC: H02M3/00 ,  H01F27/24 ,  H01F27/28 ,  H02M3/335

Abstract: A converter device has a primary coil, a secondary coil and a first semiconductor layer. The primary coil and the secondary coil are each flat, each has at least one winding and each is coaxially arranged. The primary coil is arranged on a bottom face of the first semiconductor layer and the secondary coil is arranged on a top face of the first semi-conductor layer.

公开(公告)号：US20240389874A1

公开(公告)日：2024-11-28

申请号：US18695465

申请日：2022-09-26

Applicant: ams-OSRAM International GmbH

Inventor： Thomas SCHWARZ ,  Michael JOBST ,  Sergey KUDAEV

IPC: A61B5/024 ,  A61B5/00

Abstract: A vital sensor includes at least one pixelated emitter array with first and second pixels. The pixels are configured to emit light of a wavelength range in the direction of a projection surface. The vital sensor also includes an optical element, arranged between the at least one pixelated emitter array and the projection surface, and which is configured to direct light of the first pixel onto a first region of the projection surface and light of the second pixel onto a second region of the projection surface which differs from the first region. The vital sensor further includes a photodetector configured to detect the light emitted by the pixels and reflected on the projection surface. The vital sensor additionally includes an evaluation unit configured to control the first pixel and the at least one second pixel in a pulsed and time-sequential manner to determine a first reference value.

公开(公告)号：US20240379912A1

公开(公告)日：2024-11-14

申请号：US18691153

申请日：2022-09-12

Applicant: ams-OSRAM International GmbH

Inventor： Daniel RICHTER ,  Gunnar PETERSEN

IPC: H01L33/50 ,  H01L33/30

Abstract: The invention relates to an optoelectronic semiconductor layer sequence comprising:—an active layer for generating radiation, and—at least one filter layer configured to at least partially absorb the electromagnetic radiation generated by the active layer of wavelengths smaller than a predetermined cutoff wavelength. The invention also relates to an optoelectronic semiconductor device.

公开(公告)号：US20240364082A1

公开(公告)日：2024-10-31

申请号：US18292062

申请日：2022-07-21

Applicant: ams-OSRAM International GmbH

Inventor： Heng WANG ,  Stefan ILLEK

IPC: H01S5/30 ,  H01L33/06 ,  H01L33/14 ,  H01L33/30 ,  H01S5/343

CPC classification number: H01S5/3077 ,  H01L33/06 ,  H01L33/145 ,  H01L33/305 ,  H01S5/34326 ,  H01S5/3436

Abstract: The invention relates to a radiation-emitting semiconductor body, having a first semiconductor region of a first doping type, which has a first material composition, a second semiconductor region of a second doping type, which has a second material composition, an active region, which is located between the first semiconductor region and the second semiconductor region, and a first intermediate region, which is located between the first semiconductor region and the active region, wherein the active region includes a plurality of quantum well layers and a plurality of barrier layers, which are arranged alternatingly one above the other, the barrier layers have a third material composition, the first intermediate region includes at least one first blocking layer and at least one first intermediate layer, and the first blocking layer has a fourth material composition and the first intermediate layer has a fifth material composition. The invention also relates to a laser diode and to a light-emitting diode.