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公开(公告)号：US20240347670A1
公开(公告)日：2024-10-17
申请号：US18683884
申请日：2022-08-16
发明人： Christoph Klemp , Stefan IIIek , Ines Pietzonka , Andreas Biebersdorf , Xue Wang
CPC分类号： H01L33/14 , H01L33/0062 , H01L33/025 , H01L33/06 , H01L33/305
摘要： In an embodiment a method includes providing a growth substrate layer, depositing a first doped [(AlxGa1-x)yIn1-y]zP1-z carrier transport layer on the substrate layer with x in a range of [0.5;1] along a growth direction, and depositing an active region along the growth direction, the active region for generating radiation and comprising a plurality of alternating [(AlaGa1-a)bIn1-b]cP1-c quantum well layers and [(AldGa1-d)eIn1-e]fP1-f barrier layers, wherein a is in a range of [0;0.5] and d is in a range of [0.45;1.0], wherein depositing of at least one of the barrier layer and/or the quantum well layer comprises doping with a dopant having a concentration in a range of 1e15 atoms/cm3 to 5e17 atoms/cm3, wherein the dopant is selected from at least one of the group consisting of Mg, Zn, Te and Si or depositing a second doped carrier transport [(AlxGa1-x)yIn1-y]zP1-z layer with x in a range of [0.45;1] along the growth direction.
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2.发明公开公开(公告)号：US20240204137A1
公开(公告)日：2024-06-20
申请号：US18554701
申请日：2022-04-05
IPC分类号： H01L33/24 , H01L25/075 , H01L33/62
CPC分类号： H01L33/24 , H01L25/0753 , H01L33/62
摘要： In an embodiment a radiation-emitting semiconductor chip includes a first doped region, an active region adjacent to the first doped region and a second doped region arranged on a side of the active region facing away from the first doped region, wherein the first doped region is structured in a step-like manner and includes several planes in a direction perpendicular to a main extension plane of the semiconductor chip, and wherein the active region covers the first doped region on a side surface and a top surface.
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